TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche CMPA601C025F CGHV96100F2 CGHV96130F AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA BZX84-B36-QR SD103AW-7-F DFLU1200-7
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    ISC130N20NM6ATMA1

    ISC130N20NM6ATMA1

    MOSFET

    Infineon Technologies

    		 4,434 -
    RFQ
    		ISC130N20NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Ta), 88A (Tc) 10V, 15V 11.7mOhm @ 50A, 15V 4.5V @ 135µA 58 nC @ 10 V ±20V 3900 pF @ 100 V - 3W (Ta), 242W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
    G2R1000MT17J-TR

    G2R1000MT17J-TR

    1700V 1000M TO-263-7 G2R SIC MOS

    GeneSiC Semiconductor

    		 606 -
    RFQ
    		G2R1000MT17J-TR

    Datenblatt

         		G2R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1700 V 5A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA 11 nC @ 20 V +20V, -5V 139 pF @ 1000 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IXTP300N04T2

    IXTP300N04T2

    MOSFET N-CH 40V 300A TO220AB

    Littelfuse Inc.

    		 463 -
    RFQ
    		IXTP300N04T2

    Datenblatt

         		TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 500mA, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    IPT023N10NM5LF2ATMA1

    IPT023N10NM5LF2ATMA1

    IPT023N10NM5LF2ATMA1

    Infineon Technologies

    		 1,980 -
    RFQ
    		IPT023N10NM5LF2ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 243A (Tc) 10V, 15V 2.1mOhm @ 100A, 15V 3.9V @ 193µA 144 nC @ 10 V ±20V 12000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    IPP65R110CFDXKSA2

    IPP65R110CFDXKSA2

    MOSFET N-CH 650V 31.2A TO220-3

    Infineon Technologies

    		 436 -
    RFQ
    		IPP65R110CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    CDF56G6517N TR13 PBFREE

    CDF56G6517N TR13 PBFREE

    650V, 17A, N-CHANNEL GAN FET IN

    Central Semiconductor Corp

    		 2,498 -
    RFQ
    		CDF56G6517N TR13 PBFREE

    Datenblatt

         		* 8-PowerVDFN Tape & Reel (TR) Active N-Channel - 650 V 17A (Tc) - - - - - - - 1.1W (Ta) - - - Surface Mount, Wettable Flank 8-DFN (5x6)
    S2M0120120K

    S2M0120120K

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 295 -
    RFQ
    		S2M0120120K

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    PJMF105N60FRC_T0_00601

    PJMF105N60FRC_T0_00601

    600V/ 105M / 35A/ SJ MOSFET WITH

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMF105N60FRC_T0_00601

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    PJMP105N60FRC_T0_00601

    PJMP105N60FRC_T0_00601

    600V/ 105M / 35A/ SJ MOSFET WITH

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMP105N60FRC_T0_00601

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    R6027YNXC7G

    R6027YNXC7G

    NCH 600V 14A, TO-220FM, POWER MO

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6027YNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPB90R340C3ATMA2

    IPB90R340C3ATMA2

    MOSFET N-CH 900V 15A TO263-3

    Infineon Technologies

    		 1,783 -
    RFQ
    		IPB90R340C3ATMA2

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    IPDQ65R080CFD7XTMA1

    IPDQ65R080CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ65R080CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 80mOhm @ 12.5A, 10V 4.5V @ 630µA 50 nC @ 10 V ±20V 2513 pF @ 400 V - 223W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    S2M0160120J

    S2M0160120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S2M0160120J

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 16A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 122W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IAUTN06S5N008GATMA1

    IAUTN06S5N008GATMA1

    MOSFET_)40V 60V)

    Infineon Technologies

    		 1,690 -
    RFQ
    		IAUTN06S5N008GATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SUM70042M-GE3

    SUM70042M-GE3

    N-CHANNEL 100 V (D-S) MOSFET D2P

    Vishay Siliconix

    		 780 -
    RFQ
    		SUM70042M-GE3

    Datenblatt

         		TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 3.83mOhm @ 20A, 10V 3.8V @ 250µA 126 nC @ 10 V ±20V 6750 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IXFH16N50P3

    IXFH16N50P3

    MOSFET N-CH 500V 16A TO247AD

    Littelfuse Inc.

    		 290 -
    RFQ
    		IXFH16N50P3

    Datenblatt

         		HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    TK16G60W,RVQ

    TK16G60W,RVQ

    MOSFET N CH 600V 15.8A D2PAK

    Toshiba Semiconductor and Storage

    		 984 -
    RFQ
    		TK16G60W,RVQ

    Datenblatt

         		DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Surface Mount D2PAK
    STW35N65DM2

    STW35N65DM2

    MOSFET N-CH 650V 32A TO247

    STMicroelectronics

    		 816 -
    RFQ
    		STW35N65DM2

    Datenblatt

         		MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 110mOhm @ 16A, 10V 5V @ 250µA 56.3 nC @ 10 V ±25V 2540 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NVHL095N65S3F

    NVHL095N65S3F

    SF3 FRFET AUTO 95MOHM TO-247

    onsemi

    		 418 -
    RFQ
    		NVHL095N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3020 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SIHB24N65E-GE3

    SIHB24N65E-GE3

    MOSFET N-CH 650V 24A D2PAK

    Vishay Siliconix

    		 1,868 -
    RFQ
    		SIHB24N65E-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    Total 36284 Record«Prev1... 304305306307308309310311...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135