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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVB095N65S3F

    NVB095N65S3F

    SF3 FRFET AUTO 95MOHM D2PAK-3

    onsemi

    		 1,533 -
    RFQ
    		NVB095N65S3F

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3020 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPZ60R099P6FKSA1

    IPZ60R099P6FKSA1

    MOSFET N-CH 600V 37.9A TO247-4

    Infineon Technologies

    		 188 -
    RFQ
    		IPZ60R099P6FKSA1

    Datenblatt

         		CoolMOS™ P6 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    PJMH099N60EC_T0_00601

    PJMH099N60EC_T0_00601

    600V/ 99M / 39A/ EASY TO DRIVER

    Panjit International Inc.

    		 1,500 -
    RFQ
    		PJMH099N60EC_T0_00601

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    NVBLS1D7N10MCTXG

    NVBLS1D7N10MCTXG

    PTNG 100V STD TOLL

    onsemi

    		 1,855 -
    RFQ
    		NVBLS1D7N10MCTXG

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32.4A (Ta), 265A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 698µA 115 nC @ 10 V ±20V 9200 pF @ 50 V - 4.5W (Ta), 303W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-HPSOF
    SIHG085N60EF-GE3

    SIHG085N60EF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 942 -
    RFQ
    		SIHG085N60EF-GE3

    Datenblatt

         		EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    R6038YNX3C16

    R6038YNX3C16

    600V 38A TO-220AB, HIGH-SPEED SW

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6038YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V, 12V 96mOhm @ 9A, 12V 6V @ 2.5mA 50 nC @ 10 V ±30V 2350 pF @ 100 V - 348W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    SIHG28N60EF-GE3

    SIHG28N60EF-GE3

    MOSFET N-CH 600V 28A TO247AC

    Vishay Siliconix

    		 500 -
    RFQ
    		SIHG28N60EF-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IRFP4768PBFXKMA1

    IRFP4768PBFXKMA1

    TRENCH >=100V

    Infineon Technologies

    		 388 -
    RFQ
    		IRFP4768PBFXKMA1

    Datenblatt

         		HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 93A (Tc) 10V 17.5mOhm @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V 10880 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-901
    AOTL66810Q

    AOTL66810Q

    LINEAR IC

    Alpha & Omega Semiconductor Inc.

    		 1,813 -
    RFQ

    -

    		 AlphaSGT2™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 63A (Ta), 445A (Tc) 8V, 10V 1.25mOhm @ 100A, 10V 3.6V @ 250µA 245 nC @ 10 V ±20V 13000 pF @ 40 V - 10W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLLA
    IMBG40R036M2HXTMA1

    IMBG40R036M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 984 -
    RFQ
    		IMBG40R036M2HXTMA1

    Datenblatt

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V 5.6V @ 4mA 26 nC @ 18 V +23V, -7V 1170 pF @ 200 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    S2M0120120J

    S2M0120120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 327 -
    RFQ
    		S2M0120120J

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    FDMT800152DC

    FDMT800152DC

    MOSFET N-CH 150V 8 DUAL COOL88

    onsemi

    		 2,694 -
    RFQ
    		FDMT800152DC

    Datenblatt

         		Dual Cool™, PowerTrench® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 13A (Ta), 72A (Tc) 6V, 10V 9mOhm @ 13A, 10V 4V @ 250µA 83 nC @ 10 V ±20V 5875 pF @ 75 V - 3.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-Dual Cool™88
    IPTG029N13NM6ATMA1

    IPTG029N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,800 -
    RFQ
    		IPTG029N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    R6049YNXC7G

    R6049YNXC7G

    NCH 600V 22A, TO-220FM, POWER MO

    Rohm Semiconductor

    		 975 -
    RFQ
    		R6049YNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V, 12V 82mOhm @ 11A, 12V 6V @ 2.9mA 65 nC @ 10 V ±30V 2940 pF @ 100 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    NVHL082N65S3HF

    NVHL082N65S3HF

    SUPERFER3 FRFET AUTOMOTIVE 82MOH

    onsemi

    		 420 -
    RFQ
    		NVHL082N65S3HF

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 3627 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPT009N06NM5ATMA1

    IPT009N06NM5ATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 1,990 -
    RFQ
    		IPT009N06NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Ta), 427A (Tc) 6V, 10V 0.9mOhm @ 150A, 10V 3.3V @ 220µA 257 nC @ 10 V ±20V 16000 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8
    IMLT65R060M2HXTMA1

    IMLT65R060M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 364 -
    RFQ
    		IMLT65R060M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    GS-065-011-2-L-MR

    GS-065-011-2-L-MR

    GS-065-011-2-L-MR

    Infineon Technologies Canada Inc.

    		 180 -
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 6V 195mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
    IPB65R075CFD7AATMA1

    IPB65R075CFD7AATMA1

    AUTOMOTIVE_COOLMOS PG-TO263-3

    Infineon Technologies

    		 826 -
    RFQ
    		IPB65R075CFD7AATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 75mOhm @ 16.4A, 10V 4.5V @ 820µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    MCBS260N10YHE3-TP

    MCBS260N10YHE3-TP

    N-CHANNEL MOSFET,TO-263-7

    Micro Commercial Co

    		 1,600 -
    RFQ

    -

    		 - TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tc) 10V 1.8mOhm @ 30A, 10V 4V @ 250µA 161 nC @ 10 V ±20V 10589 pF @ 30 V - 375W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
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