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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AOK150V120X2

    AOK150V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 220 -
    RFQ
    		AOK150V120X2

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 15V 195mOhm @ 3.9A, 15V 3.6V @ 3.9mA 28.3 nC @ 15 V +15V, -5V 664 pF @ 800 V - 115W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    IPF021N13NM6ATMA1

    IPF021N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 820 -
    RFQ
    		IPF021N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPT129N20NM6ATMA1

    IPT129N20NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,895 -
    RFQ
    		IPT129N20NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Ta), 87A (Tc) 10V, 15V 12mOhm @ 65A, 15V 4.5V @ 129µA 56 nC @ 10 V ±20V 3800 pF @ 100 V - 3.8W (Ta), 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    R6049YNZ4C13

    R6049YNZ4C13

    NCH 600V 49A, TO-247G, POWER MOS

    Rohm Semiconductor

    		 590 -
    RFQ
    		R6049YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 10V, 12V 82mOhm @ 11A, 12V 6V @ 2.9mA 65 nC @ 10 V ±30V 2940 pF @ 100 V - 448W (Tc) 150°C (TJ) - - Through Hole TO-247G
    MCTL300N10YHE3-TP

    MCTL300N10YHE3-TP

    N-CHANNEL MOSFET,TOLL-8L

    Micro Commercial Co

    		 3,900 -
    RFQ
    		MCTL300N10YHE3-TP

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 1.55mOhm @ 30A, 10V 3.9V @ 250µA 166 nC @ 10 V ±20V 10051 pF @ 50 V - 375W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL-8L
    RJ1R10BBHTL1

    RJ1R10BBHTL1

    NCH 150V 105A, TO-263AB, POWER M

    Rohm Semiconductor

    		 790 -
    RFQ

    -

    		 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 7750 pF @ 75 V - 181W (Tc) 150°C (TJ) - - Surface Mount TO-263AB
    R6038YNZ4C13

    R6038YNZ4C13

    600V 38A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 569 -
    RFQ
    		R6038YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tj) 10V, 12V 96mOhm @ 9A, 12V 6V @ 2.5mA 50 nC @ 10 V ±30V 2350 pF @ 100 V - 348W (Tc) 150°C (TJ) - - Through Hole TO-247
    NTPF095N65S3H

    NTPF095N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 715 -
    RFQ
    		NTPF095N65S3H

    Datenblatt

         		SuperFET® III TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tj) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPI60R099CPXKSA1

    IPI60R099CPXKSA1

    MOSFET N-CH 600V 31A TO262-3

    Infineon Technologies

    		 493 -
    RFQ
    		IPI60R099CPXKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
    NVHL1000N170M1

    NVHL1000N170M1

    SIC 1700V MOS 1O IN TO247-3L

    onsemi

    		 397 -
    RFQ
    		NVHL1000N170M1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 4.2A (Tc) 20V 1.43Ohm @ 2A, 20V 4.3V @ 640µA 14 nC @ 20 V +25V, -15V 150 pF @ 1000 V - 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IMTA65R050M2HXTMA1

    IMTA65R050M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 254 -
    RFQ
    		IMTA65R050M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPA65R065C7XKSA1

    IPA65R065C7XKSA1

    MOSFET N-CH 650V 15A TO220-FP

    Infineon Technologies

    		 230 -
    RFQ
    		IPA65R065C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPT60T040S7XTMA1

    IPT60T040S7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 1,998 -
    RFQ
    		IPT60T040S7XTMA1

    Datenblatt

         		CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tj) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
    NTHL023N065M3S

    NTHL023N065M3S

    SIC MOS TO247-3L 23MOHM 650V M3S

    onsemi

    		 315 -
    RFQ
    		NTHL023N065M3S

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 67.9A (Tc) 15V, 18V 23mOhm @ 20A, 18V 2.62V @ 10mA 70.1 nC @ 18 V +22V, -8V 1782 pF @ 400 V - 245W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3LD
    NTMTS1D5N08MC

    NTMTS1D5N08MC

    PTNG 80V IN CEBU PQFN88

    onsemi

    		 3,000 -
    RFQ
    		NTMTS1D5N08MC

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 33A (Ta), 287A (Tc) 6V, 10V 1.56mOhm @ 80A, 10V 4V @ 650µA 140 nC @ 10 V ±20V 10400 pF @ 40 V - 3.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    NTH4L095N065SC1

    NTH4L095N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 420 -
    RFQ
    		NTH4L095N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 31A (Tc) 15V, 18V 105mOhm @ 12A, 18V 4.3V @ 4mA 50 nC @ 10 V +22V, -8V 956 pF @ 325 V - 129W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    NTH4L070N120M3S

    NTH4L070N120M3S

    SILICON CARBIDE (SIC) MOSFET EL

    onsemi

    		 175 -
    RFQ
    		NTH4L070N120M3S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 34A (Tc) 18V 87mOhm @ 15A, 18V 4.4V @ 7mA 57 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    IPT017N10NM5LF2ATMA1

    IPT017N10NM5LF2ATMA1

    IPT017N10NM5LF2ATMA1

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPT017N10NM5LF2ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 321A (Tc) 10V, 15V 1.6mOhm @ 150A, 15V 3.9V @ 280µA 206 nC @ 10 V ±20V 17000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    NTMFS5C604NLT3G

    NTMFS5C604NLT3G

    MOSFET N-CH 60V 40A/287A 5DFN

    onsemi

    		 4,853 -
    RFQ
    		NTMFS5C604NLT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 120 nC @ 10 V ±20V 8900 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NVMTS1D1N04CTXG

    NVMTS1D1N04CTXG

    T6 40V SL AIZU SINGLE NCH PQFN 8

    onsemi

    		 2,909 -
    RFQ
    		NVMTS1D1N04CTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 48.8A (Ta), 277A (Tc) 10V 1.1mOhm @ 50A, 10V 4V @ 210µA 86 nC @ 10 V ±20V 5410 pF @ 25 V - 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
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