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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTBG032N065M3S

    NTBG032N065M3S

    SIC MOS D2PAK-7L 32MOHM 650V M3S

    onsemi

    		 615 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1409 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    PSMN015N10NS2_R2_00201

    PSMN015N10NS2_R2_00201

    100V/ 1.5M / TOLL FOR ESS/ BBU/

    Panjit International Inc.

    		 1,484 -
    RFQ
    		PSMN015N10NS2_R2_00201

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 395A 4.5V, 10V - - 128 nC @ 10 V ±20V - - - - - - Surface Mount TOLL
    IMT40R025M2HXTMA1

    IMT40R025M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,988 -
    RFQ
    		IMT40R025M2HXTMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    IMZA75R060M1HXKSA1

    IMZA75R060M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 238 -
    RFQ
    		IMZA75R060M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 32A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    AOK150V120X2Q

    AOK150V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK150V120X2Q

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 15V 195mOhm @ 3.9A, 15V 3.6V @ 3.9mA 28.3 nC @ 15 V +18V, -8V 664 pF @ 800 V - 115W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    PJMP099N60EC_T0_00601

    PJMP099N60EC_T0_00601

    600V/ 99M / 39A/ EASY TO DRIVER

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMP099N60EC_T0_00601

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 19.5A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 2568 pF @ 400 V - 308W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    IPTG020N13NM6ATMA1

    IPTG020N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,488 -
    RFQ
    		IPTG020N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SIHP074N65E-GE3

    SIHP074N65E-GE3

    E SERIES POWER MOSFET TO-220AB,

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHP074N65E-GE3

    Datenblatt

         		E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    NVMTS001N06CLTXG

    NVMTS001N06CLTXG

    T6 60V LL PQFN8*8 EXPANSI

    onsemi

    		 5,433 -
    RFQ
    		NVMTS001N06CLTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active - - - 56.9A (Ta), 398.2A (Tc) - - - - - - - - - Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
    IPQC60R040S7AXTMA1

    IPQC60R040S7AXTMA1

    MOSFET

    Infineon Technologies

    		 730 -
    RFQ
    		IPQC60R040S7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    IPDQ60R040S7AXTMA1

    IPDQ60R040S7AXTMA1

    MOSFET

    Infineon Technologies

    		 720 -
    RFQ
    		IPDQ60R040S7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    SCT3160KW7HRTL

    SCT3160KW7HRTL

    1200V, 17A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 1,990 -
    RFQ
    		SCT3160KW7HRTL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7L
    TK068N65Z5,S1F

    TK068N65Z5,S1F

    650V DTMOS6-HSD TO-247 68MOHM

    Toshiba Semiconductor and Storage

    		 235 -
    RFQ
    		TK068N65Z5,S1F

    Datenblatt

         		DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Ta) 10V 68mOhm @ 18.5A, 10V 4.5V @ 1.69mA 68 nC @ 10 V ±30V 3765 pF @ 300 V - 270W (Tc) 150°C - - Through Hole TO-247
    SIHG47N65E-GE3

    SIHG47N65E-GE3

    MOSFET N-CH 650V 47A TO247AC

    Vishay Siliconix

    		 486 -
    RFQ
    		SIHG47N65E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±30V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    SCT3160KWATL

    SCT3160KWATL

    1200V, 17A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		SCT3160KWATL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tj) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
    NVMFS5C604NT1G

    NVMFS5C604NT1G

    NFET SO8FL 60V 287A 1.2MO

    onsemi

    		 1,445 -
    RFQ
    		NVMFS5C604NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 6400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    G3F135MT12J-TR

    G3F135MT12J-TR

    1200V 135M TO-263-7 G3F SIC MOSF

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 18A (Tc) 18V 180mOhm @ 8A, 18V 4.3V @ 5mA 27 nC @ 18 V +22V, -10V 575 pF @ 800 V - 87W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    PJMF099N60EC_T0_00601

    PJMF099N60EC_T0_00601

    600V/ 99M / 39A/ EASY TO DRIVER

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMF099N60EC_T0_00601

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 99mOhm @ 19.5A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 2568 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    RX3R10BBHC16

    RX3R10BBHC16

    NCH 150V 105A, TO-220AB, POWER M

    Rohm Semiconductor

    		 988 -
    RFQ
    		RX3R10BBHC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 6V, 10V 8.8mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 7550 pF @ 75 V - 181W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    NVHL065N65S3F

    NVHL065N65S3F

    SUPERFET3 650V TO247

    onsemi

    		 398 -
    RFQ
    		NVHL065N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 65mOhm @ 23A, 10V 5V @ 1.3mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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