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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMTS001N06CTXG

    NVMTS001N06CTXG

    MOSFET N-CH 60V 53.7A/376A 8DFNW

    onsemi

    		 6,000 -
    RFQ
    		NVMTS001N06CTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 53.7A (Ta), 376A (Tc) 10V 0.91mOhm @ 50A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8705 pF @ 30 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
    IPDQ65R040CFD7XTMA1

    IPDQ65R040CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 744 -
    RFQ
    		IPDQ65R040CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    IPT020N13NM6ATMA1

    IPT020N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,416 -
    RFQ
    		IPT020N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    GS-065-014-6-LR-MR

    GS-065-014-6-LR-MR

    GS-065-014-6-LR-MR

    Infineon Technologies Canada Inc.

    		 227 -
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
    AOTL66912Q

    AOTL66912Q

    LINEAR IC

    Alpha & Omega Semiconductor Inc.

    		 1,898 -
    RFQ

    -

    		 AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 53A (Ta), 370A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.5V @ 250µA 220 nC @ 10 V ±20V 12500 pF @ 50 V - 10W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLLA
    IMT65R072M1HXUMA1

    IMT65R072M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 1,919 -
    RFQ
    		IMT65R072M1HXUMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    RX3G18BBGC16

    RX3G18BBGC16

    NCH 40V 180A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 937 -
    RFQ
    		RX3G18BBGC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.47mOhm @ 90A, 10V 2.5V @ 1mA 210 nC @ 10 V ±20V 13200 pF @ 20 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    NTHL075N065SC1

    NTHL075N065SC1

    SILICON CARBIDE (SIC) MOSFET - E

    onsemi

    		 730 -
    RFQ
    		NTHL075N065SC1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    SIHK075N60EF-T1GE3

    SIHK075N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 1,926 -
    RFQ
    		SIHK075N60EF-T1GE3

    Datenblatt

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    C3M0350120J-TR

    C3M0350120J-TR

    SIC, MOSFET, 350M,1200V, TO-263-

    Wolfspeed, Inc.

    		 777 -
    RFQ
    		C3M0350120J-TR

    Datenblatt

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 7.2A (Tc) 15V 455mOhm @ 3.6A, 15V 3.6V @ 1mA 13 nC @ 15 V +15V, -4V 345 pF @ 1000 V - 40.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    MSC060SMA070SCT/R

    MSC060SMA070SCT/R

    MOSFET SIC 700 V 60 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC060SMA070SDT/R

    MSC060SMA070SDT/R

    MOSFET SIC 700 V 60 MOHM TO-263-

    Microchip Technology

    		 790 -
    RFQ
    		MSC060SMA070SDT/R

    Datenblatt

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 51A (Tc) 18V, 20V 75mOhm @ 20A, 20V 5V @ 1mA 56 nC @ 20 V +23V, -10V 1160 pF @ 700 V - 240W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMZA65R050M2HXKSA1

    IMZA65R050M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 205 -
    RFQ
    		IMZA65R050M2HXKSA1

    Datenblatt

         		CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    SICW1000N170A-BP

    SICW1000N170A-BP

    N-CHANNEL MOSFET,TO-247AB

    Micro Commercial Co

    		 300 -
    RFQ
    		SICW1000N170A-BP

    Datenblatt

         		- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A 15V, 20V 1.32Ohm @ 1.5A, 20V 4.5V @ 1mA 15.5 nC @ 20 V +25V, -5V 124 pF @ 1000 V - 69W -55°C ~ 150°C (TJ) - - Through Hole TO-247AB
    MSJB11N80A-TP

    MSJB11N80A-TP

    N-CHANNEL MOSFET, D2-PAK

    Micro Commercial Co

    		 1,600 -
    RFQ
    		MSJB11N80A-TP

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 470mOhm @ 7.1A, 10V 4.5V @ 250µA 24 nC @ 10 V ±20V 958 pF @ 400 V - 156W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    AOK060V65X2

    AOK060V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK060V65X2

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    AOM060V65X2

    AOM060V65X2

    650V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOM060V65X2

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    SIHF074N65E-GE3

    SIHF074N65E-GE3

    E SERIES POWER MOSFET TO-220 FUL

    Vishay Siliconix

    		 988 -
    RFQ
    		SIHF074N65E-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 79mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2904 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    FCMT080N65S3

    FCMT080N65S3

    MOSFET N-CH 650V 38A 4TDFN

    onsemi

    		 3,000 -
    RFQ

    -

    		 SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 80mOhm @ 19A, 10V 4.5V @ 880µA 71 nC @ 10 V ±30V 2765 pF @ 400 V - 260W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
    SICW400N170A-BP

    SICW400N170A-BP

    MOSFET N-CH 1700V 6A TO247AB

    Micro Commercial Co

    		 1,795 -
    RFQ
    		SICW400N170A-BP

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A (Tc) 16V, 20V 500mOhm @ 3A, 20V 4.5V @ 5mA 31 nC @ 20 V +25V, -5V 333 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
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