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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMZA65R060M2HXKSA1

    IMZA65R060M2HXKSA1

    IMZA65R060M2HXKSA1

    Infineon Technologies

    		 400 -
    RFQ
    		IMZA65R060M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 32.8A (Tc) 15V, 20V 55mOhm @ 15.4A, 20V 5.6V @ 3.1mA 19 nC @ 18 V +23V, -7V 669 pF @ 400 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    R6086YNZC17

    R6086YNZC17

    NCH 600V 33A, TO-3PF, POWER MOSF

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6086YNZC17

    Datenblatt

         		- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V, 12V 44mOhm @ 17A, 12V 6V @ 4.6mA 110 nC @ 10 V ±30V 5100 pF @ 100 V - 114W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    NTBLS002N08MC

    NTBLS002N08MC

    MOSFET N-CH 80V 28A/238A 8HPSOF

    onsemi

    		 2,000 -
    RFQ
    		NTBLS002N08MC

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 238A (Tc) 6V, 10V 2mOhm @ 80A, 10V 4V @ 530µA 92 nC @ 10 V ±20V 6580 pF @ 40 V - 2.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-HPSOF
    PSMNR90-80ASEJ

    PSMNR90-80ASEJ

    PSMNR90-80ASE/SOT8000A/CCPAK12

    Nexperia USA Inc.

    		 250 -
    RFQ
    		PSMNR90-80ASEJ

    Datenblatt

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 495A (Tc) 10V 0.9mOhm @ 25A, 10V 3.6V @ 1mA 504 nC @ 10 V ±20V 36802 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
    AIMZA75R090M1HXKSA1

    AIMZA75R090M1HXKSA1

    AUTOMOTIVE_SICMOS

    Infineon Technologies

    		 229 -
    RFQ
    		AIMZA75R090M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 23A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 113W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    NTH4L023N065M3S

    NTH4L023N065M3S

    SIC MOS TO247-4L 23MOHM 650V M3S

    onsemi

    		 458 -
    RFQ
    		NTH4L023N065M3S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 245W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    SCT3160KWAHRTL

    SCT3160KWAHRTL

    1200V, 17A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		SCT3160KWAHRTL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    IMBG40R025M2HXTMA1

    IMBG40R025M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 900 -
    RFQ
    		IMBG40R025M2HXTMA1

    Datenblatt

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    SCT3105KRC15

    SCT3105KRC15

    1200V, 24A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 370 -
    RFQ
    		SCT3105KRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tj) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) - - Through Hole TO-247-4L
    AIMCQ120R080M1TXTMA1

    AIMCQ120R080M1TXTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 770 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 34A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +25V, -10V 671 pF @ 800 V - 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    STB28NM60ND

    STB28NM60ND

    MOSFET N-CH 600V 23A D2PAK

    STMicroelectronics

    		 1,427 -
    RFQ
    		STB28NM60ND

    Datenblatt

         		FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 190W (Tc) 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    G3F60MT06J-TR

    G3F60MT06J-TR

    650V 55M TO-263-7 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 44A (Tc) 15V, 18V 75mOhm @ 15A, 18V 4.3V @ 7mA 45 nC @ 18 V +22V, -10V 1322 pF @ 400 V - 155W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    PJMH074N60FRCH_T0_00601

    PJMH074N60FRCH_T0_00601

    600V/ 74M / 53A/ FAST RECOVERY Q

    Panjit International Inc.

    		 1,491 -
    RFQ
    		PJMH074N60FRCH_T0_00601

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 53A 10V - - 84 nC @ 10 V ±30V - - - - - - Through Hole TO-247AD
    SIHP054N65E-GE3

    SIHP054N65E-GE3

    E SERIES POWER MOSFET TO-220AB,

    Vishay Siliconix

    		 1,037 -
    RFQ
    		SIHP054N65E-GE3

    Datenblatt

         		E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 58mOhm @ 20A, 10V 5V @ 250µA 108 nC @ 20 V ±30V 3769 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPDQ60R035CFD7XTMA1

    IPDQ60R035CFD7XTMA1

    HIGH POWER_NEW PG-HDSOP-22

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R035CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Surface Mount PG-HDSOP-22-1
    IMLT65R040M2HXTMA1

    IMLT65R040M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 327 -
    RFQ
    		IMLT65R040M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    S2M0080120J

    S2M0080120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 230 -
    RFQ
    		S2M0080120J

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tj) 20V 100mOhm @ 20A, 20V 4V @ 10mA 54 nC @ 20 V +20V, -5V 1324 pF @ 1000 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    NTHL032N065M3S

    NTHL032N065M3S

    SIC MOS TO247-3L 32MOHM 650V M3S

    onsemi

    		 815 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 51A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    IPDQ65R040CFD7AXTMA1

    IPDQ65R040CFD7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 392 -
    RFQ
    		IPDQ65R040CFD7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    IPQC65R040CFD7AXTMA1

    IPQC65R040CFD7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 200 -
    RFQ
    		IPQC65R040CFD7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
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