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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TSG65N195CE RVG

    TSG65N195CE RVG

    650V, 11A, PDFN88, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 3,000 -
    RFQ
    		TSG65N195CE RVG

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IMBG120R034M2HXTMA1

    IMBG120R034M2HXTMA1

    SIC DISCRETE

    Infineon Technologies

    		 980 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MXP120A080FW-GE3

    MXP120A080FW-GE3

    SILICON CARBIDE MOSFET

    Vishay Siliconix

    		 540 -
    RFQ

    -

    		 MaxSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 29A (Tc) 18V, 20V 100mOhm @ 20A, 20V 2.69V @ 5mA 47.3 nC @ 18 V +22V, -10V 1156 pF @ 800 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3L
    AOM060V75X2Q

    AOM060V75X2Q

    750V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 330 -
    RFQ
    		AOM060V75X2Q

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    AOK060V75X2Q

    AOK060V75X2Q

    750V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK060V75X2Q

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 29A (Tc) 15V 80mOhm @ 6A, 15V 3.5V @ 6mA 39.4 nC @ 15 V +15V, -5V 1165 pF @ 400 V - 103W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    AUIRF7669L2TR

    AUIRF7669L2TR

    MOSFET N-CH 100V 19A DIRECTFET

    Infineon Technologies

    		 3,964 -
    RFQ
    		AUIRF7669L2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 114A (Tc) 10V 4.4mOhm @ 68A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5660 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
    IMDQ75R040M1HXUMA1

    IMDQ75R040M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 674 -
    RFQ
    		IMDQ75R040M1HXUMA1

    Datenblatt

         		CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 211W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVH050N65S3F

    NVH050N65S3F

    SF3 FRFET AUTO 50MOHM TO-247

    onsemi

    		 443 -
    RFQ
    		NVH050N65S3F

    Datenblatt

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SCT3080ARC15

    SCT3080ARC15

    650V, 30A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 439 -
    RFQ
    		SCT3080ARC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tj) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) - - Through Hole TO-247-4L
    G3F75MT12J-TR

    G3F75MT12J-TR

    1200V 75M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 31A (Tc) 18V 100mOhm @ 12A, 18V 4.3V @ 9mA 48 nC @ 18 V +22V, -10V 988 pF @ 800 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    IXTA1N200P3HV-TRL

    IXTA1N200P3HV-TRL

    MOSFET N-CH 2000V 1A TO263HV

    Littelfuse Inc.

    		 789 -
    RFQ

    -

    		 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2000 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 23.5 nC @ 10 V ±20V 646 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
    C3M0120065J-TR

    C3M0120065J-TR

    SIC, MOSFET, 120M, 650V, TO-263-

    Wolfspeed, Inc.

    		 1,590 -
    RFQ
    		C3M0120065J-TR

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 26 nC @ 15 V +19V, -8V 640 pF @ 400 V - 86W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMT65R048M1HXUMA1

    IMT65R048M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 1,942 -
    RFQ
    		IMT65R048M1HXUMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    SCT3080ARHRC15

    SCT3080ARHRC15

    650V, 30A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 816 -
    RFQ
    		SCT3080ARHRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    SICW025N065H4-BP

    SICW025N065H4-BP

    SIC MOSFET,TO-247-4

    Micro Commercial Co

    		 360 -
    RFQ
    		SICW025N065H4-BP

    Datenblatt

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 650 V 107A (Tc) 18V 30mOhm @ 50A, 18V 4.5V @ 50mA 275 nC @ 18 V +18V, -5V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    AIMZA75R060M1HXKSA1

    AIMZA75R060M1HXKSA1

    AUTOMOTIVE_SICMOS

    Infineon Technologies

    		 239 -
    RFQ
    		AIMZA75R060M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 32A (Tj) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 144W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    SCT4045DWATL

    SCT4045DWATL

    750V, 31A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 976 -
    RFQ
    		SCT4045DWATL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 31A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
    G3F75MT12K

    G3F75MT12K

    1200V 75M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 30A (Tc) 18V 100mOhm @ 12A, 18V 4.3V @ 9mA 48 nC @ 18 V +22V, -10V 988 pF @ 800 V - 127W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    CDFG6558N TR13 PBFREE

    CDFG6558N TR13 PBFREE

    SURFACE MOUNT MOSFET

    Central Semiconductor Corp

    		 2,480 -
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel, Depletion Mode GaNFET (Gallium Nitride) 650 V 29A (Tc) 6V 80mOhm @ 8A, 6V 2.5V @ 30.7mA 6.2 nC @ 0 V +7V, -6V 225 pF @ 400 V - 1.1W (Ta), 188W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (8x8)
    NVMTS0D7N06CTXG

    NVMTS0D7N06CTXG

    MOSFET N-CH 60V 60.5A/464A 8DFNW

    onsemi

    		 2,635 -
    RFQ
    		NVMTS0D7N06CTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60.5A (Ta), 464A (Tc) 10V 0.72mOhm @ 50A, 10V 4V @ 250µA 152 nC @ 10 V ±20V 11535 pF @ 30 V - 5W (Ta), 294.6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
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