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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPT026N12NM6ATMA1

    IPT026N12NM6ATMA1

    IPT026N12NM6ATMA1

    Infineon Technologies

    		 1,910 -
    RFQ
    		IPT026N12NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 23A (Ta), 224A (Tc) 8V, 10V 2.6mOhm @ 115A, 10V 3.6V @ 169µA 88 nC @ 10 V ±20V 6500 pF @ 60 V - 3W (Ta), 283W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    IMZA75R090M1HXKSA1

    IMZA75R090M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 218 -
    RFQ
    		IMZA75R090M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 23A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 113W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    IPT65R060CFD7XTMA1

    IPT65R060CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 1,988 -
    RFQ
    		IPT65R060CFD7XTMA1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
    NVHL110N65S3HF

    NVHL110N65S3HF

    SUPERFER3 FRFET AUTOMOTIVE 110MO

    onsemi

    		 430 -
    RFQ
    		NVHL110N65S3HF

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 58 nC @ 10 V ±30V 2753 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    GANE3R9-150QBAZ

    GANE3R9-150QBAZ

    GANE3R9-150QBA/SOT8091/VQFN7

    Nexperia USA Inc.

    		 2,430 -
    RFQ
    		GANE3R9-150QBAZ

    Datenblatt

         		- 25-PowerVFQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 150 V 100A (Ta) 5V 3.9mOhm @ 30A, 5V 2.1V @ 12mA 20 nC @ 5 V +6V, -4V 2200 pF @ 75 V - 65W (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 25-VQFN (4x6)
    NVH082N65S3F

    NVH082N65S3F

    SUPERFER3 FRFET AUTOMOTIVE 82MOH

    onsemi

    		 438 -
    RFQ
    		NVH082N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 1mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    TSM60NE069CIT C0G

    TSM60NE069CIT C0G

    600V, 24A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 12V 60mOhm @ 8A, 12V 6V @ 3.5mA 89 nC @ 10 V ±30V 3551 pF @ 300 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    NTBLS1D7N10MCTXG

    NTBLS1D7N10MCTXG

    MOSFET, POWER, SINGLE N-CHANNEL,

    onsemi

    		 1,930 -
    RFQ
    		NTBLS1D7N10MCTXG

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 29A (Ta), 272A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 698µA 115 nC @ 10 V ±20V 9200 pF @ 50 V - 3.4W (Ta), 295W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    IPDQ60R045CFD7XTMA1

    IPDQ60R045CFD7XTMA1

    HIGH POWER_NEW PG-HDSOP-22

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R045CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Surface Mount PG-HDSOP-22-1
    IXFH46N30T

    IXFH46N30T

    MOSFET N-CH 300V 46A TO247

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFH46N30T

    Datenblatt

         		HiPerFET™, Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 46A (Tc) 10V 80mOhm @ 23A, 10V 5V @ 4mA 86 nC @ 10 V ±20V 4770 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IPA60R060C7XKSA1

    IPA60R060C7XKSA1

    MOSFET N-CH 600V 16A TO220

    Infineon Technologies

    		 286 -
    RFQ
    		IPA60R060C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    SIHR080N60E-T1-GE3

    SIHR080N60E-T1-GE3

    E SERIES POWER MOSFET POWERPAK 8

    Vishay Siliconix

    		 1,990 -
    RFQ
    		SIHR080N60E-T1-GE3

    Datenblatt

         		E 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    NVBG095N65S3F

    NVBG095N65S3F

    SF3 FRFET AUTO, 95MOHM, D2PAK 7L

    onsemi

    		 603 -
    RFQ
    		NVBG095N65S3F

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3020 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    NVBG1000N170M1

    NVBG1000N170M1

    SIC 1700V MOS 1O IN TO263-7L

    onsemi

    		 1,280 -
    RFQ
    		NVBG1000N170M1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1700 V 4.3A (Tc) 20V 1.43Ohm @ 2A, 20V 4.3V @ 640µA 14 nC @ 20 V +25V, -15V 150 pF @ 1000 V - 51W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    RJ1P10BBHTL1

    RJ1P10BBHTL1

    NCH 100V 105A, TO-263AB, POWER M

    Rohm Semiconductor

    		 730 -
    RFQ
    		RJ1P10BBHTL1

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 105A (Tc) 6V, 10V 3mOhm @ 90A, 10V 4V @ 1mA 135 nC @ 10 V ±20V 8600 pF @ 50 V - 189W (Tc) 150°C (TJ) - - Surface Mount TO-263AB
    IPB022N12NM6ATMA1

    IPB022N12NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 945 -
    RFQ
    		IPB022N12NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 167A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    AIMZA75R140M1HXKSA1

    AIMZA75R140M1HXKSA1

    IGBT

    Infineon Technologies

    		 230 -
    RFQ
    		AIMZA75R140M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 16A (Tj) 15V, 20V 129mOhm @ 4.7A, 20V 5.6V @ 1.7mA 13 nC @ 18 V +23V, -5V 351 pF @ 500 V - 86W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    R6077VNZC17

    R6077VNZC17

    600V 29A TO-3PF, PRESTOMOS WITH

    Rohm Semiconductor

    		 420 -
    RFQ
    		R6077VNZC17

    Datenblatt

         		- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V, 15V 51mOhm @ 23A, 15V 6.5V @ 1.9mA 108 nC @ 10 V ±30V 5200 pF @ 100 V - 113W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    GAN111-650WSBQ

    GAN111-650WSBQ

    GAN111-650WSB/SOT429/TO-247

    Nexperia USA Inc.

    		 249 -
    RFQ
    		GAN111-650WSBQ

    Datenblatt

         		- TO-247-3 Tube Active N-Channel GaNFET (Gallium Nitride) 650 V 21A (Ta) 10V 114mOhm @ 14A, 10V 4.8V @ 1mA 4.9 nC @ 10 V ±20V 336 pF @ 400 V - 107W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
    NTBLS001N06C

    NTBLS001N06C

    MOSFET N-CH 60V 51A/422A 8HPSOF

    onsemi

    		 1,764 -
    RFQ
    		NTBLS001N06C

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 51A (Ta), 422A (Tc) 6V, 10V 0.9mOhm @ 80A, 10V 4V @ 562µA 143 nC @ 10 V ±20V 11575 pF @ 30 V - 4.2W (Ta), 284W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
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