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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPTG018N10NM5ATMA1

    IPTG018N10NM5ATMA1

    TRENCH >=100V PG-HSOG-8

    Infineon Technologies

    		 1,700 -
    RFQ
    		IPTG018N10NM5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 273A Tc) 6V, 10V 1.8mOhm @ 150A, 10V 3.8V @ 202µA 152 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
    NVHL095N65S3HF

    NVHL095N65S3HF

    SUPERFER3 FRFET AUTOMOTIVE 95MOH

    onsemi

    		 450 -
    RFQ
    		NVHL095N65S3HF

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3105 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPB65R110CFDATMA2

    IPB65R110CFDATMA2

    MOSFET N-CH 650V 31.2A TO263-3

    Infineon Technologies

    		 1,960 -
    RFQ
    		IPB65R110CFDATMA2

    Datenblatt

         		CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    SIHP085N60EF-GE3

    SIHP085N60EF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 1,995 -
    RFQ
    		SIHP085N60EF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IMWH170R450M1XKSA1

    IMWH170R450M1XKSA1

    IMWH170R450M1XKSA1

    Infineon Technologies

    		 252 -
    RFQ

    -

    		 CoolSiC™ TO-247-3 Tray Active N-Channel SiCFET (Silicon Carbide) 1700 V 10A (Tj) 12V, 15V 390mOhm @ 2A, 15V 5.7V @ 2.6mA 11.7 nC @ 12 V 15V, 12V 506 pF @ 1000 V - 111W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-U04
    SIHF30N60E-GE3

    SIHF30N60E-GE3

    MOSFET N-CH 600V 29A TO220

    Vishay Siliconix

    		 2,975 -
    RFQ
    		SIHF30N60E-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole -
    MCBS260N10Y-TP

    MCBS260N10Y-TP

    N-CHANNEL MOSFET,TO-263-7

    Micro Commercial Co

    		 1,508 -
    RFQ
    		MCBS260N10Y-TP

    Datenblatt

         		- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tc) 10V 1.8mOhm @ 30A, 10V 4V @ 250µA 161 nC @ 10 V ±20V 10589 pF @ 25 V - 375W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SIHG24N65E-GE3

    SIHG24N65E-GE3

    MOSFET N-CH 650V 24A TO247AC

    Vishay Siliconix

    		 610 -
    RFQ
    		SIHG24N65E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    CDF56G7032N TR13 PBFREE

    CDF56G7032N TR13 PBFREE

    SURFACE MOUNT MOSFET

    Central Semiconductor Corp

    		 2,500 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 18A (Tc) 6V 140mOhm @ 5A, 6V 2.5V @ 17.2mA 3.5 nC @ 6 V +7V, -6V 125 pF @ 400 V - 1.1W (Ta), 113W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount, Wettable Flank 8-DFN (5x6)
    TK095N65Z5,S1F(S

    TK095N65Z5,S1F(S

    650V DTMOS6-HIGH SPEED DIODE

    Toshiba Semiconductor and Storage

    		 195 -
    RFQ

    -

    		 DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Ta) 10V 95mOhm @ 14.5A, 10V 4.5V @ 1.27mA 50 nC @ 10 V ±30V 2880 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247
    XP10NA1R5TL

    XP10NA1R5TL

    MOSFET N-CH 100V 300A TOLL

    YAGEO XSEMI

    		 987 -
    RFQ
    		XP10NA1R5TL

    Datenblatt

         		XP10NA1R5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 250µA 304 nC @ 10 V ±20V 16960 pF @ 80 V - 3.75W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
    MSC180SMA120SDT/R

    MSC180SMA120SDT/R

    MOSFET SIC 1200 V 180 MOHM TO-26

    Microchip Technology

    		 773 -
    RFQ
    		MSC180SMA120SDT/R

    Datenblatt

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 18V, 20V 225mOhm @ 8A, 20V 5V @ 500µA 36 nC @ 20 V +23V, -10V 481 pF @ 1.2 kV - 146W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    SIHF085N60EF-GE3

    SIHF085N60EF-GE3

    EF SERIES POWER MOSFET TO-220 FU

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHF085N60EF-GE3

    Datenblatt

         		EF TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IPW95R130PFD7XKSA1

    IPW95R130PFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 314 -
    RFQ
    		IPW95R130PFD7XKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 36.5A 10V - - 141 nC @ 10 V ±20V - - 227W -55°C ~ 150°C - - Through Hole PG-TO247-3-41
    NTMTS002N08MC

    NTMTS002N08MC

    PTNG 80V IN CEBU PQFN88

    onsemi

    		 2,948 -
    RFQ
    		NTMTS002N08MC

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 29A (Ta), 229A (Tc) 6V, 10V 2mOhm @ 90A, 10V 4V @ 540µA 125 nC @ 10 V ±20V 8900 pF @ 40 V - 3.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    STW18NM60N

    STW18NM60N

    MOSFET N-CH 600V 13A TO247-3

    STMicroelectronics

    		 534 -
    RFQ
    		STW18NM60N

    Datenblatt

         		MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    GS-065-011-6-LR-MR

    GS-065-011-6-LR-MR

    GS-065-011-6-LR-MR

    Infineon Technologies Canada Inc.

    		 235 -
    RFQ

    -

    		 - 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
    GS-065-011-6-L-MR

    GS-065-011-6-L-MR

    GS-065-011-6-L-MR

    Infineon Technologies Canada Inc.

    		 227 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    SIJH5100E-T1-GE3

    SIJH5100E-T1-GE3

    N-CHANNEL 100 V (D-S) 175C MOSFE

    Vishay Siliconix

    		 1,942 -
    RFQ
    		SIJH5100E-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Ta), 277A (Tc) 7.5V, 10V 1.89mOhm @ 20A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 6900 pF @ 50 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    IMTA65R060M2HXTMA1

    IMTA65R060M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 367 -
    RFQ
    		IMTA65R060M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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