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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFH12N120P

    IXFH12N120P

    MOSFET N-CH 1200V 12A TO247AD

    IXYS

    		 298 -
    RFQ
    		IXFH12N120P Datenblatt HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    SCTL35N65G2V

    SCTL35N65G2V

    TRANS SJT N-CH 650V PWRFLAT HV

    STMicroelectronics

    		 5,941 -
    RFQ
    		SCTL35N65G2V Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) - 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 417W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    R6576KNZ4C13

    R6576KNZ4C13

    650V 76A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6576KNZ4C13 Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 46mOhm @ 44.4A, 10V 5V @ 2.96mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IXFK120N30P3

    IXFK120N30P3

    MOSFET N-CH 300V 120A TO264AA

    Littelfuse Inc.

    		 110 -
    RFQ
    		IXFK120N30P3 Datenblatt HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXFK80N65X2

    IXFK80N65X2

    MOSFET N-CH 650V 80A TO264

    Littelfuse Inc.

    		 491 -
    RFQ
    		IXFK80N65X2 Datenblatt HiPerFET™, Ultra X2 TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA
    IXFX66N85X

    IXFX66N85X

    MOSFET N-CH 850V 66A PLUS247-3

    Littelfuse Inc.

    		 250 -
    RFQ
    		IXFX66N85X Datenblatt HiPerFET™, Ultra X TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 850 V 66A (Tc) 10V 65mOhm @ 500mA, 10V 5.5V @ 8mA 230 nC @ 10 V ±30V 8900 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    NTHL040N65S3HF

    NTHL040N65S3HF

    MOSFET N-CH 650V 65A TO247-3

    onsemi

    		 393 -
    RFQ
    		NTHL040N65S3HF Datenblatt FRFET®, SuperFET® III TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 159 nC @ 10 V ±30V 5945 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFH26N100X

    IXFH26N100X

    MOSFET N-CH 1000V 26A TO247

    Littelfuse Inc.

    		 260 -
    RFQ
    		IXFH26N100X Datenblatt HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 320mOhm @ 13A, 10V 6V @ 4mA 113 nC @ 10 V ±30V 3290 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    IXFK32N80P

    IXFK32N80P

    MOSFET N-CH 800V 32A TO264AA

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFK32N80P Datenblatt HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
    IXFX24N100Q3

    IXFX24N100Q3

    MOSFET N-CH 1000V 24A PLUS247-3

    IXYS

    		 300 -
    RFQ
    		IXFX24N100Q3 Datenblatt HiPerFET™, Q3 Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 440mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    SCT3080KW7TL

    SCT3080KW7TL

    SICFET N-CH 1200V 30A TO263-7

    Rohm Semiconductor

    		 785 -
    RFQ
    		SCT3080KW7TL Datenblatt - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) - 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 159W 175°C (TJ) - - Surface Mount TO-263-7
    IXTH60N20L2

    IXTH60N20L2

    MOSFET N-CH 200V 60A TO247

    Littelfuse Inc.

    		 329 -
    RFQ
    		IXTH60N20L2 Datenblatt Linear L2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    FCH060N80-F155

    FCH060N80-F155

    MOSFET N-CH 800V 56A TO247

    onsemi

    		 850 -
    RFQ
    		FCH060N80-F155 Datenblatt SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 56A (Tc) 10V 60mOhm @ 29A, 10V 4.5V @ 5.8mA 350 nC @ 10 V ±20V 14685 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFX80N60P3

    IXFX80N60P3

    MOSFET N-CH 600V 80A PLUS247-3

    Littelfuse Inc.

    		 202 -
    RFQ
    		IXFX80N60P3 Datenblatt HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 70mOhm @ 500mA, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    NVBG045N065SC1

    NVBG045N065SC1

    SIC MOS D2PAK-7L 650V

    onsemi

    		 790 -
    RFQ
    		NVBG045N065SC1 Datenblatt - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 62A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1890 pF @ 325 V - 242W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    NTHL019N65S3H

    NTHL019N65S3H

    MOSFET N-CH 650V 75A TO247-3

    onsemi

    		 430 -
    RFQ
    		NTHL019N65S3H Datenblatt SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) - 19.3mOhm @ 37.5A, 10V 4V @ 14.3mA 282 nC @ 10 V ±30V 15993 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFX420N10T

    IXFX420N10T

    MOSFET N-CH 100V 420A PLUS247-3

    Littelfuse Inc.

    		 289 -
    RFQ
    		IXFX420N10T Datenblatt HiPerFET™, Trench TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
    NTH4L025N065SC1

    NTH4L025N065SC1

    SILICON CARBIDE (SIC) MOSFET - 1

    onsemi

    		 247 -
    RFQ
    		NTH4L025N065SC1 Datenblatt - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V +22V, -8V 3480 pF @ 15 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NVBG060N065SC1

    NVBG060N065SC1

    SIC MOS D2PAK-7L 650V

    onsemi

    		 1,580 -
    RFQ
    		NVBG060N065SC1 Datenblatt - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V - 1473 pF @ 325 V - 170W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    NTH4LN019N65S3H

    NTH4LN019N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 309 -
    RFQ
    		NTH4LN019N65S3H Datenblatt SuperFET® III TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19.3mOhm @ 37.5A, 10V 4V @ 14.3mA 282 nC @ 10 V ±30V 15993 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
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