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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFK32N100X

    IXFK32N100X

    MOSFET N-CH 1000V 32A TO264

    Littelfuse Inc.

    		 215 -
    RFQ
    		IXFK32N100X

    Datenblatt

         		HiPerFET™, Ultra X TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 220mOhm @ 16A, 10V 6V @ 4mA 130 nC @ 10 V ±30V 4075 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
    IXFH24N90P

    IXFH24N90P

    MOSFET N-CH 900V 24A TO247AD

    Littelfuse Inc.

    		 128 -
    RFQ
    		IXFH24N90P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    SCT3080ALHRC11

    SCT3080ALHRC11

    SICFET N-CH 650V 30A TO247N

    Rohm Semiconductor

    		 448 -
    RFQ
    		SCT3080ALHRC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
    IXFH80N65X2-4

    IXFH80N65X2-4

    MOSFET N-CH 650V 80A TO247-4L

    Littelfuse Inc.

    		 120 -
    RFQ
    		IXFH80N65X2-4

    Datenblatt

         		HiPerFET™, Ultra X2 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 38mOhm @ 500mA, 10V 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
    STWA75N60DM6

    STWA75N60DM6

    MOSFET N-CH 600V 72A TO247

    STMicroelectronics

    		 361 -
    RFQ
    		STWA75N60DM6

    Datenblatt

         		MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) - - - - ±25V - - - - - - Through Hole TO-247 Long Leads
    R6077VNZ4C13

    R6077VNZ4C13

    600V 77A TO-247, PRESTOMOS WITH

    Rohm Semiconductor

    		 1,148 -
    RFQ
    		R6077VNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V, 15V 51mOhm @ 23A, 15V 6.5V @ 1.9mA 108 nC @ 10 V ±30V 5200 pF @ 100 V - 781W (Tc) 150°C (TJ) - - Through Hole TO-247
    STFW69N65M5

    STFW69N65M5

    MOSFET N-CH 650V 58A ISOWATT

    STMicroelectronics

    		 145 -
    RFQ
    		STFW69N65M5

    Datenblatt

         		MDmesh™ V TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 79W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    STWA40N90K5

    STWA40N90K5

    MOSFET N-CH 900V 40A TO247

    STMicroelectronics

    		 596 -
    RFQ
    		STWA40N90K5

    Datenblatt

         		MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 99mOhm @ 20A, 10V 5V @ 100µA 89 nC @ 10 V ±30V 3260 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
    SCT4045DEC11

    SCT4045DEC11

    750V, 45M, 3-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 4,201 -
    RFQ
    		SCT4045DEC11

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 14600 pF @ 500 V - 115W 175°C (TJ) - - Through Hole TO-247N
    R6076ENZ4C13

    R6076ENZ4C13

    MOSFET N-CH 600V 76A TO247

    Rohm Semiconductor

    		 463 -
    RFQ
    		R6076ENZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 42mOhm @ 44.4A, 10V 4V @ 1mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247
    IXTX120N65X2

    IXTX120N65X2

    MOSFET N-CH 650V 120A PLUS247-3

    Littelfuse Inc.

    		 282 -
    RFQ
    		IXTX120N65X2

    Datenblatt

         		Ultra X2 TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 4.5V @ 8mA 240 nC @ 10 V ±30V 13600 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IXKH70N60C5

    IXKH70N60C5

    MOSFET N-CH 600V 70A TO247AD

    Littelfuse Inc.

    		 284 -
    RFQ
    		IXKH70N60C5

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    IXFH70N65X3

    IXFH70N65X3

    MOSFET 70A 650V X3 TO247

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFH70N65X3

    Datenblatt

         		HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 44mOhm @ 35A, 10V 5.2V @ 4mA 66 nC @ 10 V ±20V 4600 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
    IXTT12N150

    IXTT12N150

    MOSFET N-CH 1500V 12A TO268

    Littelfuse Inc.

    		 213 -
    RFQ
    		IXTT12N150

    Datenblatt

         		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 12A (Tc) 10V 2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±30V 3720 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
    IXTH04N300P3HV

    IXTH04N300P3HV

    MOSFET N-CH 3000V 400MA TO247HV

    Littelfuse Inc.

    		 120 -
    RFQ
    		IXTH04N300P3HV

    Datenblatt

         		Polar P3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 3000 V 400mA (Tc) 10V 190Ohm @ 200mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 283 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247HV
    R6576ENZ4C13

    R6576ENZ4C13

    650V 76A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    		 548 -
    RFQ
    		R6576ENZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Ta) 10V 46mOhm @ 44.4A, 10V 4V @ 2.96mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247
    IXFH12N120P

    IXFH12N120P

    MOSFET N-CH 1200V 12A TO247AD

    IXYS

    		 298 -
    RFQ
    		IXFH12N120P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    SCTL35N65G2V

    SCTL35N65G2V

    TRANS SJT N-CH 650V PWRFLAT HV

    STMicroelectronics

    		 5,941 -
    RFQ
    		SCTL35N65G2V

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 40A (Tc) - 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 417W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    R6576KNZ4C13

    R6576KNZ4C13

    650V 76A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6576KNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 46mOhm @ 44.4A, 10V 5V @ 2.96mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IXFK120N30P3

    IXFK120N30P3

    MOSFET N-CH 300V 120A TO264AA

    Littelfuse Inc.

    		 110 -
    RFQ
    		IXFK120N30P3

    Datenblatt

         		HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
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