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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVH4L060N065SC1

    NVH4L060N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 443 -
    RFQ
    		NVH4L060N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V - 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IXFH60N65X2

    IXFH60N65X2

    MOSFET N-CH 650V 60A TO247

    Littelfuse Inc.

    		 290 -
    RFQ
    		IXFH60N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5.5V @ 4mA 107 nC @ 10 V ±30V 6180 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    IXTH60N20X4

    IXTH60N20X4

    MOSFET ULTRA X4 200V 60A TO-247

    Littelfuse Inc.

    		 383 -
    RFQ
    		IXTH60N20X4

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXFH)
    STWA88N65M5

    STWA88N65M5

    MOSFET N-CH 650V 84A TO247

    STMicroelectronics

    		 593 -
    RFQ
    		STWA88N65M5

    Datenblatt

         		MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 84A (Tc) 10V 29mOhm @ 42A, 10V 5V @ 250µA 204 nC @ 10 V ±25V 8825 pF @ 100 V - 450W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    IXFR44N50P

    IXFR44N50P

    MOSFET N-CH 500V 24A ISOPLUS247

    Littelfuse Inc.

    		 289 -
    RFQ
    		IXFR44N50P

    Datenblatt

         		HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 150mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
    NVMTS0D7N04CLTXG

    NVMTS0D7N04CLTXG

    AFSM T6 40V LL NCH

    onsemi

    		 3,029 -
    RFQ
    		NVMTS0D7N04CLTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 67A (Ta), 433A (Tc) 4.5V, 10V 0.63mOhm @ 50A, 10V 2.5V @ 250µA 205 nC @ 10 V ±20V 12238 pF @ 25 V - 2.5W (Ta), 205W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
    IPDQ60R022S7XTMA1

    IPDQ60R022S7XTMA1

    HIGH POWER_NEW PG-HDSOP-22

    Infineon Technologies

    		 738 -
    RFQ
    		IPDQ60R022S7XTMA1

    Datenblatt

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5639 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    R6030JNZ4C13

    R6030JNZ4C13

    MOSFET N-CH 600V 30A TO247G

    Rohm Semiconductor

    		 391 -
    RFQ
    		R6030JNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247G
    NTMTS1D6N10MCTXG

    NTMTS1D6N10MCTXG

    SINGLE N-CHANNEL POWER MOSFET 10

    onsemi

    		 2,873 -
    RFQ
    		NTMTS1D6N10MCTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Ta), 273A (Tc) 10V 1.7mOhm @ 90A, 10V 4V @ 650µA 106 nC @ 10 V ±20V 7630 pF @ 50 V - 5W (Ta), 291W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    NTBG060N065SC1

    NTBG060N065SC1

    SILICON CARBIDE (SIC) MOSFET - 4

    onsemi

    		 708 -
    RFQ
    		NTBG060N065SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
    FCH077N65F-F085

    FCH077N65F-F085

    MOSFET N-CH 650V 54A TO247-3

    onsemi

    		 854 -
    RFQ
    		FCH077N65F-F085

    Datenblatt

         		SuperFET® II TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 250µA 164 nC @ 10 V ±20V 7162 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    STW34NM60ND

    STW34NM60ND

    MOSFET N-CH 600V 29A TO247

    STMicroelectronics

    		 588 -
    RFQ
    		STW34NM60ND

    Datenblatt

         		FDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    STW65N80K5

    STW65N80K5

    MOSFET N-CH 800V 46A TO247

    STMicroelectronics

    		 439 -
    RFQ
    		STW65N80K5

    Datenblatt

         		MDmesh™ K5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 46A (Tc) 10V 80mOhm @ 23A, 10V 5V @ 100µA 92 nC @ 10 V ±30V 3230 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFH26N65X2

    IXFH26N65X2

    IXFH26N65X2

    Littelfuse Inc.

    		 288 -
    RFQ
    		IXFH26N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 26A (Tc) 10V 130mOhm @ 500mA, 10V 5V @ 2.5mA 45 nC @ 10 V ±30V 2450 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
    IXFH6N120

    IXFH6N120

    MOSFET N-CH 1200V 6A TO247AD

    Littelfuse Inc.

    		 580 -
    RFQ
    		IXFH6N120

    Datenblatt

         		HiPerFET™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.6Ohm @ 3A, 10V 5V @ 2.5mA 56 nC @ 10 V ±20V 1950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    SCT4045DW7TL

    SCT4045DW7TL

    750V, 31A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 424 -
    RFQ
    		SCT4045DW7TL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 31A (Tj) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 93W 175°C (TJ) - - Surface Mount TO-263-7L
    SCT3160KW7TL

    SCT3160KW7TL

    SICFET N-CH 1200V 17A TO263-7

    Rohm Semiconductor

    		 3,872 -
    RFQ
    		SCT3160KW7TL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) - 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 100W 175°C (TJ) - - Surface Mount TO-263-7
    IXTQ120N20P

    IXTQ120N20P

    MOSFET N-CH 200V 120A TO3P

    Littelfuse Inc.

    		 265 -
    RFQ
    		IXTQ120N20P

    Datenblatt

         		Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 22mOhm @ 500mA, 10V 5V @ 250µA 152 nC @ 10 V ±20V 6000 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
    NVBG095N065SC1

    NVBG095N065SC1

    SIC MOS D2PAK-7L 650V

    onsemi

    		 755 -
    RFQ
    		NVBG095N065SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 15V, 18V 105mOhm @ 12A, 18V 4.3V @ 4mA 50 nC @ 18 V - 956 pF @ 325 V - 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    IXTK200N10P

    IXTK200N10P

    MOSFET N-CH 100V 200A TO264

    Littelfuse Inc.

    		 221 -
    RFQ
    		IXTK200N10P

    Datenblatt

         		Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 100A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7600 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXTK)
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