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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STO68N65DM6

    STO68N65DM6

    N-CHANNEL 650 V, 53 MOHM TYP., 5

    STMicroelectronics

    		 187 -
    RFQ
    		STO68N65DM6

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 10V 65mOhm @ 27.5A, 10V 4.75V @ 250µA 80 nC @ 10 V ±25V 3528 pF @ 100 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL (HV)
    AUIRFP4568-E

    AUIRFP4568-E

    MOSFET N-CH 150V 171A TO247AD

    Infineon Technologies

    		 355 -
    RFQ
    		AUIRFP4568-E

    Datenblatt

         		HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    NTH4L060N065SC1

    NTH4L060N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 499 -
    RFQ
    		NTH4L060N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    STW69N65M5-4

    STW69N65M5-4

    MOSFET N-CH 650V 58A TO247-4L

    STMicroelectronics

    		 385 -
    RFQ
    		STW69N65M5-4

    Datenblatt

         		MDmesh™ V TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 330W (Tc) 150°C (TJ) - - Through Hole TO-247-4L
    IXFH230N10T

    IXFH230N10T

    MOSFET N-CH 100V 230A TO247AD

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFH230N10T

    Datenblatt

         		HiPerFET™, Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 230A (Tc) 10V 4.7mOhm @ 500mA, 10V 4.5V @ 1mA 250 nC @ 10 V ±20V 15300 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
    SIHG47N60E-E3

    SIHG47N60E-E3

    MOSFET N-CH 600V 47A TO247AC

    Vishay Siliconix

    		 225 -
    RFQ
    		SIHG47N60E-E3

    Datenblatt

         		- TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±30V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    NTBL050N65S3H

    NTBL050N65S3H

    MOSFET - POWER,NCHANNEL, SUPERFE

    onsemi

    		 1,278 -
    RFQ
    		NTBL050N65S3H

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 49A (Tc) 10V 50mOhm @ 24.5A, 10V 4V @ 4.8mA 98 nC @ 10 V ±30V 4880 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-HPSOF
    SCT3105KW7TL

    SCT3105KW7TL

    SICFET N-CH 1200V 23A TO263-7

    Rohm Semiconductor

    		 995 -
    RFQ
    		SCT3105KW7TL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 23A (Tc) - 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 125W 175°C (TJ) - - Surface Mount TO-263-7
    SIHK045N60E-T1-GE3

    SIHK045N60E-T1-GE3

    E SERIES POWER MOSFET POWERPAK 1

    Vishay Siliconix

    		 1,806 -
    RFQ
    		SIHK045N60E-T1-GE3

    Datenblatt

         		E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 49mOhm @ 17A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4013 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    UF4C120053K4S

    UF4C120053K4S

    1200V/53MOHM, SIC, FAST CASCODE,

    Qorvo

    		 505 -
    RFQ
    		UF4C120053K4S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 34A (Tc) 12V 67mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    FCA47N60-F109

    FCA47N60-F109

    MOSFET N-CH 600V 47A TO3PN

    onsemi

    		 452 -
    RFQ
    		FCA47N60-F109

    Datenblatt

         		SuperFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
    NVHL040N60S5F

    NVHL040N60S5F

    SUPERFET5 FRFET, 40MOHM, TO-247-

    onsemi

    		 337 -
    RFQ
    		NVHL040N60S5F

    Datenblatt

         		FRFET®, SUPERFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 59A (Tc) 10V 40mOhm @ 29.5A, 10V 4.8V @ 7.2mA 115 nC @ 10 V ±30V 6318 pF @ 400 V - 347W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPW60R075CPFKSA1

    IPW60R075CPFKSA1

    MOSFET N-CH 650V 39A TO247-3

    Infineon Technologies

    		 237 -
    RFQ
    		IPW60R075CPFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 75mOhm @ 26A, 10V 3.5V @ 1.7mA 116 nC @ 10 V ±20V 4000 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    AUIRFP4568

    AUIRFP4568

    MOSFET N-CH 150V 171A TO247AC

    Infineon Technologies

    		 386 -
    RFQ
    		AUIRFP4568

    Datenblatt

         		HEXFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 171A (Tc) 10V 5.9mOhm @ 103A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 10470 pF @ 50 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    SIHK045N60EF-T1GE3

    SIHK045N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 1,998 -
    RFQ
    		SIHK045N60EF-T1GE3

    Datenblatt

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 52mOhm @ 17A, 10V 5V @ 250µA 105 nC @ 10 V ±30V 4685 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    STB32N65M5

    STB32N65M5

    MOSFET N-CH 650V 24A D2PAK

    STMicroelectronics

    		 940 -
    RFQ
    		STB32N65M5

    Datenblatt

         		MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) - - Surface Mount D2PAK
    IPZA60R037P7XKSA1

    IPZA60R037P7XKSA1

    MOSFET N-CH 600V 76A TO247-4

    Infineon Technologies

    		 194 -
    RFQ
    		IPZA60R037P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    E3M0120090J

    E3M0120090J

    900V 120M AUTOMOTIVE SIC MOSFET

    Wolfspeed, Inc.

    		 502 -
    RFQ
    		E3M0120090J

    Datenblatt

         		E-Series TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 18 nC @ 15 V +15V, -4V 414 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Automotive - Surface Mount TO-263-7
    IXTT26N50P

    IXTT26N50P

    MOSFET N-CH 500V 26A TO268

    Littelfuse Inc.

    		 205 -
    RFQ
    		IXTT26N50P

    Datenblatt

         		Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
    STB34NM60N

    STB34NM60N

    MOSFET N-CH 600V 29A D2PAK

    STMicroelectronics

    		 500 -
    RFQ
    		STB34NM60N

    Datenblatt

         		MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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