FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
PJMD990N65EC_L2_00001

PJMD990N65EC_L2_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

6,000 -
RFQ
PJMD990N65EC_L2_00001

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 306 pF @ 400 V - 47.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PJMF360N60EC_T0_00001

PJMF360N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
RFQ
PJMF360N60EC_T0_00001

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 18.7 nC @ 10 V ±30V 735 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
PJMP130N65EC_T0_00001

PJMP130N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
RFQ
PJMP130N65EC_T0_00001

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 235W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
IXFH24N80P

IXFH24N80P

MOSFET N-CH 800V 24A TO247AD

Littelfuse Inc.

200 -
RFQ
IXFH24N80P

Datenblatt

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 400mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
R6535KNX3C16

R6535KNX3C16

650V 35A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor

1,000 -
RFQ
R6535KNX3C16

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 5V @ 1.3mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 370W (Tc) 150°C (TJ) - - Through Hole TO-220AB
IXFP60N25X3M

IXFP60N25X3M

MOSFET N-CH 250V 60A TO220AB

Littelfuse Inc.

280 -
RFQ
IXFP60N25X3M

Datenblatt

HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
PJMD390N65EC_L2_00001

PJMD390N65EC_L2_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

5,940 -
RFQ
PJMD390N65EC_L2_00001

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 726 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PJMF120N60EC_T0_00001

PJMF120N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,997 -
RFQ
PJMF120N60EC_T0_00001

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 120mOhm @ 12A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1960 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
PJMF130N65EC_T0_00001

PJMF130N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

1,976 -
RFQ
PJMF130N65EC_T0_00001

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1920 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
FCH099N65S3-F155

FCH099N65S3-F155

MOSFET N-CH 650V 30A TO247-3

onsemi

645 -
RFQ
FCH099N65S3-F155

Datenblatt

SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.5V @ 3mA 61 nC @ 10 V ±30V 2480 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IXKH35N60C5

IXKH35N60C5

MOSFET N-CH 600V 35A TO247AD

Littelfuse Inc.

359 -
RFQ
IXKH35N60C5

Datenblatt

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 100mOhm @ 18A, 10V 3.9V @ 1.2mA 70 nC @ 10 V ±20V 2800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
FDBL0150N60

FDBL0150N60

MOSFET N-CH 60V 240A 8HPSOF

onsemi

1,369 -
RFQ
FDBL0150N60

Datenblatt

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
IRFPC60PBF

IRFPC60PBF

MOSFET N-CH 600V 16A TO247-3

Vishay Siliconix

302 -
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 400mOhm @ 9.6A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3900 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IPDD60R045CFD7XTMA1

IPDD60R045CFD7XTMA1

MOSFET N-CH 600V 61A HDSOP-10

Infineon Technologies

1,680 -
RFQ
IPDD60R045CFD7XTMA1

Datenblatt

CoolMOS™ CFD7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) - 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
IXTQ100N25P

IXTQ100N25P

MOSFET N-CH 250V 100A TO3P

Littelfuse Inc.

169 -
RFQ
IXTQ100N25P

Datenblatt

Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 24mOhm @ 50A, 10V 5V @ 250µA 185 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
TSM60NB099PW C1G

TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

Taiwan Semiconductor Corporation

2,055 -
RFQ

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.7A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
NTMT095N65S3H

NTMT095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,846 -
RFQ
NTMT095N65S3H

Datenblatt

SuperFET® III 4-PowerTSFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
IXFA72N20X3

IXFA72N20X3

MOSFET N-CH 200V 72A TO263AA

Littelfuse Inc.

437 -
RFQ
IXFA72N20X3

Datenblatt

HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
NTHL095N65S3H

NTHL095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

226 -
RFQ
NTHL095N65S3H

Datenblatt

SuperFET® III TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SIHG47N60EF-GE3

SIHG47N60EF-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix

463 -
RFQ
SIHG47N60EF-GE3

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 67mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
Total 36322 Record«Prev1... 197198199200201202203204...1817Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer