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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMBG65R072M1HXTMA1

    IMBG65R072M1HXTMA1

    SILICON CARBIDE MOSFET PG-TO263-

    Infineon Technologies

    		 817 -
    RFQ
    		IMBG65R072M1HXTMA1 Datenblatt CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 33A (Tc) 18V 94mOhm @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V 744 pF @ 400 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
    NVHL055N60S5F

    NVHL055N60S5F

    SUPERFET5 FRFET, 55MOHM, TO-247-

    onsemi

    		 528 -
    RFQ
    		NVHL055N60S5F Datenblatt FRFET®, SUPERFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 4.8V @ 5.2mA 85.2 nC @ 10 V ±30V 4603 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IXFH30N85X

    IXFH30N85X

    MOSFET N-CH 850V 30A TO247AD

    Littelfuse Inc.

    		 290 -
    RFQ
    		IXFH30N85X Datenblatt HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 30A (Tc) 10V 220mOhm @ 500mA, 10V 5.5V @ 2.5mA 68 nC @ 10 V ±30V 2460 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
    SIHH070N60EF-T1GE3

    SIHH070N60EF-T1GE3

    MOSFET N-CH 600V 36A PPAK 8 X 8

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SIHH070N60EF-T1GE3 Datenblatt EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2647 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    R6535ENZC17

    R6535ENZC17

    MOSFET N-CH 650V 35A TO3

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6535ENZC17 Datenblatt - TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 4V @ 1.21mA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 102W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    NVMFS5C404NLWFAFT1G

    NVMFS5C404NLWFAFT1G

    MOSFET N-CH 40V 370A 5DFN

    onsemi

    		 1,481 -
    RFQ
    		NVMFS5C404NLWFAFT1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.67mOhm @ 50A, 10V 2V @ 250µA 81 nC @ 4.5 V ±20V 12168 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    NTHL065N65S3HF

    NTHL065N65S3HF

    MOSFET N-CH 650V 46A TO247-3

    onsemi

    		 318 -
    RFQ
    		NTHL065N65S3HF Datenblatt SuperFET® III TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) - 65mOhm @ 23A, 10V 5V @ 1.3mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    R6020KNZ4C13

    R6020KNZ4C13

    MOSFET N-CH 600V 20A TO247

    Rohm Semiconductor

    		 410 -
    RFQ
    		R6020KNZ4C13 Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) - - Through Hole TO-247
    STW42N65M5

    STW42N65M5

    MOSFET N-CH 650V 33A TO247-3

    STMicroelectronics

    		 498 -
    RFQ
    		STW42N65M5 Datenblatt MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 79mOhm @ 16.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 4650 pF @ 100 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    IXFQ72N20X3

    IXFQ72N20X3

    MOSFET N-CH 200V 72A TO3P

    Littelfuse Inc.

    		 304 -
    RFQ
    		IXFQ72N20X3 Datenblatt HiPerFET™, Ultra X3 TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    UF4C120070K4S

    UF4C120070K4S

    1200V/70MOHM, SIC, FAST CASCODE,

    Qorvo

    		 240 -
    RFQ
    		UF4C120070K4S Datenblatt - TO-247-4 Tube Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 27.5A (Tc) - 91mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 217W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    IXFH46N65X3

    IXFH46N65X3

    MOSFET 46A 650V X3 TO247

    Littelfuse Inc.

    		 352 -
    RFQ
    		IXFH46N65X3 Datenblatt HiPerFET™, Ultra X3 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 73mOhm @ 23A, 10V 5.2V @ 2.5mA 40 nC @ 10 V ±20V 2730 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
    NVMTS0D6N04CLTXG

    NVMTS0D6N04CLTXG

    T6 40V LL PQFN8*8 EXPANSI

    onsemi

    		 2,863 -
    RFQ
    		NVMTS0D6N04CLTXG Datenblatt - - Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 78.9A (Ta), 554.5A (Tc) 4.5V, 10V 0.42mOhm @ 50A, 10V 2V @ 250µA 265 nC @ 10 V ±20V 16013 pF @ 20 V - 5W (Ta), 245W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - -
    IMW65R072M1HXKSA1

    IMW65R072M1HXKSA1

    MOSFET 650V NCH SIC TRENCH

    Infineon Technologies

    		 260 -
    RFQ
    		IMW65R072M1HXKSA1 Datenblatt CoolSIC™ M1 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 26A (Tc) 18V 94mOhm @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V 744 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
    NVH4L160N120SC1

    NVH4L160N120SC1

    SICFET N-CH 1200V 17.3A TO247

    onsemi

    		 353 -
    RFQ
    		NVH4L160N120SC1 Datenblatt - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17.3A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 34 nC @ 20 V +25V, -15V 665 pF @ 800 V - 111W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    SCT4062KRC15

    SCT4062KRC15

    1200V, 62M, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 4,925 -
    RFQ
    		SCT4062KRC15 Datenblatt - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) - - Through Hole TO-247-4L
    IXFH140N10P

    IXFH140N10P

    MOSFET N-CH 100V 140A TO247AD

    Littelfuse Inc.

    		 306 -
    RFQ
    		IXFH140N10P Datenblatt HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
    FDBL9401-F085T6

    FDBL9401-F085T6

    MOSFET N-CH 40V 58.4/240A 8HPSOF

    onsemi

    		 5,193 -
    RFQ
    		FDBL9401-F085T6 Datenblatt - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58.4A (Ta), 240A (Tc) - 0.67mOhm @ 50A, 10V 4V @ 290µA 148 nC @ 10 V +20V, -16V 10000 pF @ 25 V - 4.3W (Ta), 180.7W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-HPSOF
    PJMH074N60FRC_T0_00601

    PJMH074N60FRC_T0_00601

    600V/ 74MOHM / 53A/ FAST RECOVER

    Panjit International Inc.

    		 2,984 -
    RFQ
    		PJMH074N60FRC_T0_00601 Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 74mOhm @ 26.5A, 10V 4.5V @ 250µA 84 nC @ 10 V ±30V 3871 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    IPP65R050CFD7AAKSA1

    IPP65R050CFD7AAKSA1

    MOSFET N-CH 650V 45A TO220-3

    Infineon Technologies

    		 500 -
    RFQ
    		IPP65R050CFD7AAKSA1 Datenblatt CoolMOS™ CFD7A TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3
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