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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI1032X-T1-GE3

    SI1032X-T1-GE3

    MOSFET N-CH 20V 200MA SC89-3

    Vishay Siliconix

    		 6,284 -
    RFQ
    		SI1032X-T1-GE3

    Datenblatt

         		TrenchFET® SC-89, SOT-490 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-89-3
    FQU8N25TU

    FQU8N25TU

    MOSFET N-CH 250V 6.2A IPAK

    Fairchild Semiconductor

    		 5,629 -
    RFQ
    		FQU8N25TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 530 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    FQPF4N60

    FQPF4N60

    MOSFET N-CH 600V 2.6A TO220F

    Fairchild Semiconductor

    		 4,775 -
    RFQ
    		FQPF4N60

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 2.2Ohm @ 1.3A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 670 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    AUIRLR2703

    AUIRLR2703

    MOSFET N-CH 30V 20A DPAK

    International Rectifier

    		 4,674 -
    RFQ
    		AUIRLR2703

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    IRF6811STRPBF-INF

    IRF6811STRPBF-INF

    DIRECTFET PLUS POWER MOSFET

    Infineon Technologies

    		 3,676 -
    RFQ
    		IRF6811STRPBF-INF

    Datenblatt

         		DirectFET® DirectFET™ Isometric SQ Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) - 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric SQ
    FQPF5N50CFTU

    FQPF5N50CFTU

    MOSFET N-CH 500V 5A TO220F

    Fairchild Semiconductor

    		 3,499 -
    RFQ
    		FQPF5N50CFTU

    Datenblatt

         		FRFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRL540A

    IRL540A

    MOSFET N-CH 100V 28A TO220-3

    Fairchild Semiconductor

    		 3,000 -
    RFQ
    		IRL540A

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 5V 58mOhm @ 14A, 5V 2V @ 250µA 54 nC @ 5 V ±20V 1580 pF @ 25 V - 121W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    2SK3991-ZK-E1-AZ

    2SK3991-ZK-E1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 2,500 -
    RFQ
    		2SK3991-ZK-E1-AZ

    Datenblatt

         		* - Bulk Obsolete - - - - - - - - - - - - - - - - -
    G35N02K

    G35N02K

    N20V,RD(MAX)<[email protected],RD(MAX)<18

    Goford Semiconductor

    		 1,769 -
    RFQ
    		G35N02K

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 4.5V 9mOhm @ 20A, 4.5V 1.2V @ 250µA 24 nC @ 4.5 V ±12V 1380 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    RFP45N06LE

    RFP45N06LE

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 1,569 -
    RFQ
    		RFP45N06LE

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    RFD16N05_NL

    RFD16N05_NL

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,435 -
    RFQ
    		RFD16N05_NL

    Datenblatt

         		PSPICE® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    HUF76121S3S

    HUF76121S3S

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,200 -
    RFQ
    		HUF76121S3S

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTP65N02R

    NTP65N02R

    MOSFET N-CH 25V 7.6A/58A TO220AB

    onsemi

    		 8,737 -
    RFQ
    		NTP65N02R

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 7.6A (Ta), 58A (Tc) 4.5V, 10V 10.5mOhm @ 20A, 10V 2V @ 250µA 9.5 nC @ 4.5 V ±20V 1330 pF @ 20 V - 1.04W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDPF7N50

    FDPF7N50

    MOSFET N-CH 500V 7A TO220F

    Fairchild Semiconductor

    		 265,296 -
    RFQ
    		FDPF7N50

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 940 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPA60R520C6XKSA1

    IPA60R520C6XKSA1

    MOSFET N-CH 600V 8.1A TO220-FP

    Infineon Technologies

    		 6,397 -
    RFQ
    		IPA60R520C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IRFS540A

    IRFS540A

    MOSFET N-CH 100V 17A TO220F

    Fairchild Semiconductor

    		 88,157 -
    RFQ
    		IRFS540A

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 52mOhm @ 8.5A, 10V 4V @ 250µA 78 nC @ 10 V - 1710 pF @ 25 V - 39W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    IRFP048NPBF

    IRFP048NPBF

    IRFP048 - 12V-300V N-CHANNEL POW

    Infineon Technologies

    		 34,892 -
    RFQ
    		IRFP048NPBF

    Datenblatt

         		HEXFET® TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    NVMFS6B75NLT3G

    NVMFS6B75NLT3G

    MOSFET N-CH 100V 7A/28A 5DFN

    onsemi

    		 3,773 -
    RFQ

    -

    		 - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta), 28A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 740 pF @ 25 V - 3.5W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IPP16CN10LGXKSA1

    IPP16CN10LGXKSA1

    MOSFET N-CH 100V 54A TO220-3

    Infineon Technologies

    		 5,677 -
    RFQ
    		IPP16CN10LGXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 54A (Tc) 10V 15.7mOhm @ 54A, 10V 2.4V @ 61µA 44 nC @ 10 V ±20V 4190 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IRLS540A

    IRLS540A

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 12,350 -
    RFQ
    		IRLS540A

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 5V 58mOhm @ 8.5A, 5V 2V @ 250µA 54 nC @ 5 V ±20V 1580 pF @ 25 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
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