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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    GSFN4013

    GSFN4013

    MOSFET, P-CH, SINGLE, -30.00A, -

    Good-Ark Semiconductor

    		 10,000 -
    RFQ
    		GSFN4013

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 60 nC @ 10 V ±20V 3242 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
    ES6U1T2R

    ES6U1T2R

    MOSFET P-CH 12V 1.3A 6WEMT

    Rohm Semiconductor

    		 8,330 -
    RFQ
    		ES6U1T2R

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.3A (Ta) 1.5V, 4.5V 260mOhm @ 1.3A, 4.5V 1V @ 1mA 2.4 nC @ 4.5 V ±10V 290 pF @ 6 V Schottky Diode (Isolated) 700mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
    PJQ4410P_R2_00001

    PJQ4410P_R2_00001

    30V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 4,700 -
    RFQ
    		PJQ4410P_R2_00001

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 35A (Tc) 4.5V, 10V 12Ohm @ 10A, 10V 2.5V @ 250µA 7.1 nC @ 4.5 V ±20V 660 pF @ 25 V - 2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN3333-8
    2SJ317NYTL-E

    2SJ317NYTL-E

    P-CHANNEL SMALL SIGNAL MOSFET

    Renesas Electronics Corporation

    		 3,000 -
    RFQ
    		2SJ317NYTL-E

    Datenblatt

         		* - Bulk Obsolete - - - - - - - - - - - - - - - - -
    FDMC3020DC-P

    FDMC3020DC-P

    MOSFET N-CH 30V 17A/40A DLCOOL33

    onsemi

    		 7,329 -
    RFQ

    -

    		 PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 40A (Tc) 4.5V, 10V 6.25mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3)
    FDG410NZ

    FDG410NZ

    MOSFET N-CH 20V 2.2A SC88

    onsemi

    		 4,122 -
    RFQ
    		FDG410NZ

    Datenblatt

         		PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.5V, 4.5V 70mOhm @ 2.2A, 4.5V 1V @ 250µA 7.2 nC @ 4.5 V ±8V 535 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    PJL9410_R2_00001

    PJL9410_R2_00001

    30V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,422 -
    RFQ
    		PJL9410_R2_00001

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 7.1 nC @ 4.5 V ±20V 660 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    BSO083N03MSGXUMA1

    BSO083N03MSGXUMA1

    MOSFET N-CH 30V 11A 8DSO

    Infineon Technologies

    		 2,072 -
    RFQ
    		BSO083N03MSGXUMA1

    Datenblatt

         		OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8.3mOhm @ 14A, 10V 2V @ 250µA 27 nC @ 10 V ±20V 2100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    FQP8P10

    FQP8P10

    MOSFET P-CH 100V 8A TO220-3

    onsemi

    		 4,622 -
    RFQ
    		FQP8P10

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    FDMC8296

    FDMC8296

    MOSFET N-CH 30V 12A/18A 8MLP

    onsemi

    		 8,746 -
    RFQ
    		FDMC8296

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 18A (Tc) 4.5V, 10V 8mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 2.3W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    NVMFS5C450NT3G

    NVMFS5C450NT3G

    MOSFET N-CH 40V 5DFN

    onsemi

    		 3,864 -
    RFQ
    		NVMFS5C450NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 65µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    RJK03K2DPA-00#J5A

    RJK03K2DPA-00#J5A

    N-CHANNEL POWER SWITCHING MOSFET

    Renesas Electronics Corporation

    		 51,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    RJK0211DPA-00#J5A

    RJK0211DPA-00#J5A

    N-CHANNEL POWER SWITCHING

    Renesas Electronics Corporation

    		 33,000 -
    RFQ
    		RJK0211DPA-00#J5A

    Datenblatt

         		- 8-PowerVDFN Bulk Active - - - 30A (Tj) - - - - - - - - - - - Surface Mount WPAK(3)
    UPA2734GR-E2-AT

    UPA2734GR-E2-AT

    P-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 25,000 -
    RFQ
    		UPA2734GR-E2-AT

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    SSF3611E

    SSF3611E

    MOSFET, P-CH, SINGLE, -12A, -30V

    Good-Ark Semiconductor

    		 15,996 -
    RFQ
    		SSF3611E

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 3224 pF @ 15 V - 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    IRLS640A

    IRLS640A

    MOSFET N-CH 200V 9.8A TO220F

    onsemi

    		 7,083 -
    RFQ
    		IRLS640A

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 5V 180mOhm @ 4.9A, 5V 2V @ 250µA 56 nC @ 5 V ±20V 1705 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    G6P06

    G6P06

    P60V,RD(MAX)<96M@-10V,RD(MAX)<14

    Goford Semiconductor

    		 11,970 -
    RFQ
    		G6P06

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1378 pF @ 30 V - 1.14W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    IPAW70R600CEXKSA1

    IPAW70R600CEXKSA1

    MOSFET N-CH 700V 10.5A TO220-31

    Infineon Technologies

    		 5,822 -
    RFQ
    		IPAW70R600CEXKSA1

    Datenblatt

         		CoolMOS™ CE TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 210µA 22 nC @ 10 V ±20V 474 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
    ES6U3T2CR

    ES6U3T2CR

    MOSFET N-CH 30V 1.4A WEMT6

    Rohm Semiconductor

    		 7,960 -
    RFQ
    		ES6U3T2CR

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 1.4A, 10V 2.5V @ 1mA 1.4 nC @ 5 V ±20V 70 pF @ 10 V Schottky Diode (Isolated) 800mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
    BUK9606-55B,118

    BUK9606-55B,118

    MOSFET N-CH 55V 75A D2PAK

    NXP USA Inc.

    		 7,865 -
    RFQ
    		BUK9606-55B,118

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
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