FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SK3618-TL-E

2SK3618-TL-E

MOSFET N-CH

onsemi

24,500 -
RFQ
2SK3618-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
MMDF3N02HDR2

MMDF3N02HDR2

MOSFET N-CH 20V 3.8A 8SOIC

onsemi

3,648 -
RFQ
MMDF3N02HDR2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.8A (Ta) 4.5V, 10V 90mOhm @ 3A, 10V 2V @ 250µA 18 nC @ 10 V ±20V 630 pF @ 16 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDD6796

FDD6796

MOSFET N-CH 25V 20A/40A DPAK

Fairchild Semiconductor

15,248 -
RFQ
FDD6796

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25 V 20A (Ta), 40A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 3V @ 250µA 41 nC @ 10 V ±20V 2315 pF @ 13 V - 3.7W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
BUZ71

BUZ71

N-CHANNEL POWER MOSFET

Harris Corporation

14,750 -
RFQ
BUZ71

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 10V 100mOhm @ 9A, 10V 4V @ 1mA - ±20V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
RFD10N05SM

RFD10N05SM

10A, 50V, N-CHANNEL,

Harris Corporation

11,858 -
RFQ
RFD10N05SM

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 50 V - - - - - - - - - - - - Surface Mount TO-252 (DPAK)
IRFP254B

IRFP254B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,578 -
RFQ
IRFP254B

Datenblatt

- TO-3P-3, SC-65-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 140mOhm @ 12.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 221W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
FQB4N20TM

FQB4N20TM

MOSFET N-CH 200V 3.6A D2PAK

Fairchild Semiconductor

10,614 -
RFQ
FQB4N20TM

Datenblatt

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
FQI5N50CTU

FQI5N50CTU

MOSFET N-CH 500V 5A I2PAK

Fairchild Semiconductor

10,517 -
RFQ
FQI5N50CTU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
GSFN11006

GSFN11006

MOSFET, N-CH, SINGLE, 60.00A, 60

Good-Ark Semiconductor

10,000 -
RFQ
GSFN11006

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 11mOhm @ 12A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 2200 pF @ 30 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.15x3.1)
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor

9,850 -
RFQ
FQD630TM

Datenblatt

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
2SK3618-TL-E-SY

2SK3618-TL-E-SY

MOSFET N-CH

Sanyo

9,800 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor

8,203 -
RFQ
FDD068AN03L

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
GT100N04D3

GT100N04D3

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

Goford Semiconductor

6,800 -
RFQ
GT100N04D3

Datenblatt

SGT 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 13A (Tc) 4.5V, 10V 10mOhm @ 5A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 642 pF @ 20 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
SSFN4964

SSFN4964

MOSFET, N-CH, SINGLE, 60.00A, 40

Good-Ark Semiconductor

5,960 -
RFQ
SSFN4964

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6.5mOhm @ 10A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2670 pF @ 20 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.1)
2N7002-T1-GE3

2N7002-T1-GE3

MOSFET N-CH 60V 115MA TO236

Vishay Siliconix

5,928 -
RFQ
2N7002-T1-GE3

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236
FDN335N

FDN335N

SOT-23 MOSFETS ROHS

UMW

5,720 -
RFQ
FDN335N

Datenblatt

UMW TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.5V, 4.5V 70mOhm @ 1.7A, 4.5V 1.5V @ 250µA 3.5 nC @ 4.5 V ±8V 310 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23
AUIRFR4105

AUIRFR4105

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

5,362 -
RFQ
AUIRFR4105

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor

5,237 -
RFQ
FDMB506P

Datenblatt

PowerTrench® 8-PowerWDFN Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2960 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP, MicroFET (3x1.9)
IPD60R600CP

IPD60R600CP

N-CHANNEL POWER MOSFET

Infineon Technologies

4,945 -
RFQ
IPD60R600CP

Datenblatt

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
BUK763R4-30,118

BUK763R4-30,118

MOSFET N-CH 30V 75A D2PAK

Nexperia USA Inc.

6,476 -
RFQ
BUK763R4-30,118

Datenblatt

- - Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 3.4mOhm @ 25A, 10V 4V @ 1mA 75 nC @ 10 V ±20V 4951 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 - -
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