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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FQPF6N50

    FQPF6N50

    MOSFET N-CH 500V 3.6A TO220F

    Fairchild Semiconductor

    		 5,884 -
    RFQ
    		FQPF6N50

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 1.3Ohm @ 1.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRFD213

    IRFD213

    MOSFET N-CH 250V 450MA 4DIP

    Harris Corporation

    		 5,563 -
    RFQ
    		IRFD213

    Datenblatt

         		- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
    RF1S23N06LESM

    RF1S23N06LESM

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 5,549 -
    RFQ
    		RF1S23N06LESM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 23A - - - - - - - - - - - Surface Mount TO-263AB
    FQPF6N40C

    FQPF6N40C

    MOSFET N-CH 400V 6A TO220F

    Fairchild Semiconductor

    		 5,450 -
    RFQ
    		FQPF6N40C

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FDS8433A

    FDS8433A

    MOSFET P-CH 20V 5A 8SOIC

    onsemi

    		 5,265 -
    RFQ
    		FDS8433A

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 4.5V 47mOhm @ 5A, 4.5V 1V @ 250µA 28 nC @ 5 V ±8V 1130 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    G700P06H

    G700P06H

    P-60V,-5A,RD(MAX)<75M@-10V,VTH-1

    Goford Semiconductor

    		 4,784 -
    RFQ
    		G700P06H

    Datenblatt

         		TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V 2.5V @ 250µA 15.8 nC @ 10 V ±20V 1459 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    IRF8327STRPBF

    IRF8327STRPBF

    MOSFET N-CH 30V 14A/60A DIRECTFT

    International Rectifier

    		 4,538 -
    RFQ
    		IRF8327STRPBF

    Datenblatt

         		- DirectFET™ Isometric SQ Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 14 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    BUK6510-75C,127

    BUK6510-75C,127

    MOSFET N-CH 75V 77A TO220AB

    NXP USA Inc.

    		 8,274 -
    RFQ
    		BUK6510-75C,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 77A (Tc) 4.5V, 10V 10.4mOhm @ 25A, 10V 2.8V @ 1mA 81 nC @ 10 V ±16V 5251 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQP16N15

    FQP16N15

    MOSFET N-CH 150V 16.4A TO220-3

    Fairchild Semiconductor

    		 3,866 -
    RFQ
    		FQP16N15

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.4A (Tc) 10V 160mOhm @ 8.2A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 108W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    FDU6030BL

    FDU6030BL

    MOSFET N-CH 30V 10A/42A IPAK

    Fairchild Semiconductor

    		 3,525 -
    RFQ
    		FDU6030BL

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 42A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 3V @ 250µA 31 nC @ 10 V ±20V 1143 pF @ 15 V - 3.8W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    HUF75329P3

    HUF75329P3

    MOSFET N-CH 55V 49A TO220-3

    Harris Corporation

    		 3,077 -
    RFQ
    		HUF75329P3

    Datenblatt

         		UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    FQU2N80TU

    FQU2N80TU

    MOSFET N-CH 800V 1.8A IPAK

    Fairchild Semiconductor

    		 3,037 -
    RFQ
    		FQU2N80TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.3Ohm @ 900mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    FDN335N-EV

    FDN335N-EV

    MOSFET N-CH 20V 1.7A SOT-23

    EVVO

    		 2,990 -
    RFQ
    		FDN335N-EV

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.5V, 4.5V 70mOhm @ 1.7A, 4.5V 1.5V @ 250µA 3.5 nC @ 4.5 V ±8V 310 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23
    FQPF5N60CYDTU

    FQPF5N60CYDTU

    MOSFET N-CH 600V 4.5A TO220F-3

    Fairchild Semiconductor

    		 2,878 -
    RFQ
    		FQPF5N60CYDTU

    Datenblatt

         		QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
    G7K2N20HE

    G7K2N20HE

    N200V, ESD,2A,RD<0.7@10V,VTH1V~2

    Goford Semiconductor

    		 2,501 -
    RFQ
    		G7K2N20HE

    Datenblatt

         		TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 10.8 nC @ 10 V ±20V 568 pF @ 100 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    SPB02N60C3ATMA1

    SPB02N60C3ATMA1

    MOSFET N-CH 650V 1.8A TO263-3

    Infineon Technologies

    		 7,576 -
    RFQ
    		SPB02N60C3ATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    G3K8N15HE

    G3K8N15HE

    MOSFET N-CH ESD 150V 2A SOT-223

    Goford Semiconductor

    		 2,490 -
    RFQ
    		G3K8N15HE

    Datenblatt

         		TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 558 pF @ 75 V - 2.16W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    FDU7030BL

    FDU7030BL

    MOSFET N-CH 30V 14A/56A IPAK

    Fairchild Semiconductor

    		 2,400 -
    RFQ
    		FDU7030BL

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1425 pF @ 15 V - 2.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    2SK3815-E

    2SK3815-E

    NCH 4V DRIVE SERIES

    onsemi

    		 1,990 -
    RFQ
    		2SK3815-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NDD60N900U1T4G

    NDD60N900U1T4G

    MOSFET N-CH 600V 5.7A DPAK

    onsemi

    		 3,060 -
    RFQ
    		NDD60N900U1T4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 12 nC @ 10 V ±25V 360 pF @ 50 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
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