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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDP5N60NZ

    FDP5N60NZ

    MOSFET N-CH 600V 4.5A TO220-3

    onsemi

    		 8,557 -
    RFQ
    		FDP5N60NZ

    Datenblatt

         		UniFET-II™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±25V 600 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPA60R280P7SE8228XKSA1

    IPA60R280P7SE8228XKSA1

    MOSFET N-CH 600V 12A TO220

    Infineon Technologies

    		 6,774 -
    RFQ

    -

    		 CoolMOS™ P7 TO-220-3 Full Pack Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    RFP15N08L

    RFP15N08L

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 49,688 -
    RFQ
    		RFP15N08L

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 5V 140mOhm @ 7.5A, 5V 2.5V @ 1mA 80 nC @ 10 V ±10V - - 72W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    2SK4197FS

    2SK4197FS

    MOSFET N-CH 600V 3.3A TO220-3

    onsemi

    		 6,201 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.3A (Tc) 10V 3.25Ohm @ 1.8A, 10V - 11 nC @ 10 V ±30V 260 pF @ 30 V - 2W (Ta), 28W (Tc) 150°C (TJ) - - Through Hole TO-220-3
    PSMN8R5-100ESQ

    PSMN8R5-100ESQ

    NEXPERIA PSMN8R5-100ESQ - 100A,

    Nexperia USA Inc.

    		 36,282 -
    RFQ
    		PSMN8R5-100ESQ

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
    IRF521

    IRF521

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 25,650 -
    RFQ
    		IRF521

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 9.2A (Tc) 10V 270mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    BUK7620-100A,118

    BUK7620-100A,118

    MOSFET N-CH 100V 63A D2PAK

    NXP USA Inc.

    		 21,494 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    IPI100N04S4H2AKSA1

    IPI100N04S4H2AKSA1

    MOSFET N-CH 40V 100A TO262-3

    Infineon Technologies

    		 8,681 -
    RFQ
    		IPI100N04S4H2AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    NTMS5838NLR2G

    NTMS5838NLR2G

    MOSFET N-CH 40V 5.8A 8SOIC

    onsemi

    		 6,802 -
    RFQ
    		NTMS5838NLR2G

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 5.8A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 785 pF @ 20 V - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IPP90N06S404AKSA1

    IPP90N06S404AKSA1

    MOSFET N-CH 60V 90A TO220-3

    Infineon Technologies

    		 5,970 -
    RFQ
    		IPP90N06S404AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPD40N03S4L08ATMA1

    IPD40N03S4L08ATMA1

    MOSFET N-CH 30V 40A TO252-31

    Infineon Technologies

    		 7,445 -
    RFQ
    		IPD40N03S4L08ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 8.3mOhm @ 40A, 10V 2.2V @ 13µA 20 nC @ 10 V ±16V 1520 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    IPAW70R950CEXKSA1

    IPAW70R950CEXKSA1

    MOSFET N-CH 700V 7.4A TO220-3-31

    Infineon Technologies

    		 9,316 -
    RFQ
    		IPAW70R950CEXKSA1

    Datenblatt

         		CoolMOS™ CE TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 7.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 150µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 68W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
    GSFN26010

    GSFN26010

    MOSFET, N-CH, SINGLE, 25.00A, 10

    Good-Ark Semiconductor

    		 10,000 -
    RFQ
    		GSFN26010

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 6V, 10V 26mOhm @ 10A, 10V 3.8V @ 250µA 23 nC @ 10 V ±20V 1355 pF @ 50 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
    RSL020P03TR

    RSL020P03TR

    MOSFET P-CH 30V 2A TUMT6

    Rohm Semiconductor

    		 8,261 -
    RFQ
    		RSL020P03TR

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 120mOhm @ 2A, 10V - 3.9 nC @ 5 V ±20V 350 pF @ 10 V - 1W (Ta) - - - Surface Mount TUMT6
    NDS9430A

    NDS9430A

    MOSFET P-CH 20V 5.3A 8SOIC

    Fairchild Semiconductor

    		 7,500 -
    RFQ
    		NDS9430A

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 4.5V, 10V 50mOhm @ 5.3A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 950 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    AUIRLL024NTR

    AUIRLL024NTR

    MOSFET N-CH 55V 3.1A SOT223

    Infineon Technologies

    		 6,243 -
    RFQ
    		AUIRLL024NTR

    Datenblatt

         		HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    GSFD2506

    GSFD2506

    MOSFET, N-CH, SINGLE, 6.00A, 250

    Good-Ark Semiconductor

    		 4,972 -
    RFQ
    		GSFD2506

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 4.5V, 10V 620mOhm @ 2A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 777 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    FQPF5N50CYDTU

    FQPF5N50CYDTU

    MOSFET N-CH 500V 5A TO220F-3

    onsemi

    		 9,269 -
    RFQ
    		FQPF5N50CYDTU

    Datenblatt

         		QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
    2SJ317NYTR

    2SJ317NYTR

    P-CHANNEL SMALL SIGNAL MOSFET

    Renesas Electronics Corporation

    		 4,000 -
    RFQ
    		2SJ317NYTR

    Datenblatt

         		* - Bulk Obsolete - - - - - - - - - - - - - - - - -
    RFD14N06

    RFD14N06

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 3,664 -
    RFQ
    		RFD14N06

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
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