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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SSFQ3910

    SSFQ3910

    MOSFET, N-CH, SINGLE, 10A, 30V,

    Good-Ark Semiconductor

    		 6,000 -
    RFQ
    		SSFQ3910

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 900 pF @ 25 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    SSFB3909

    SSFB3909

    MOSFET, P-CH, SINGLE, -12A, -30V

    Good-Ark Semiconductor

    		 5,980 -
    RFQ
    		SSFB3909

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 6.1A (Ta), 12A (Tc) 4.5V, 10V 30mOhm @ 4A, 10V 2.2V @ 250µA 15 nC @ 4.5 V ±20V 1280 pF @ 15 V - 7.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
    SSFB3910L

    SSFB3910L

    MOSFET, N-CH, SINGLE, 10A, 30V,

    Good-Ark Semiconductor

    		 5,960 -
    RFQ
    		SSFB3910L

    Datenblatt

         		- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A 4.5V, 10V 13mOhm @ 6A, 10V 2.5V @ 250µA 7.4 nC @ 4.5 V ±20V 620 pF @ 25 V - 2.01W(Tc) -55°C ~ 150°C - - Surface Mount 6-DFN (2x2)
    GSFL1004

    GSFL1004

    MOSFET, N-CH, SINGLE, 3A, 100V,

    Good-Ark Semiconductor

    		 5,815 -
    RFQ
    		GSFL1004

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 185mOhm @ 2A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1190 pF @ 50 V - 1.78W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount SOT-223
    BUK653R7-30C,127

    BUK653R7-30C,127

    MOSFET N-CH 30V 100A TO220AB

    NXP USA Inc.

    		 5,180 -
    RFQ

    -

    		 TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQB19N10LTM

    FQB19N10LTM

    MOSFET N-CH 100V 19A D2PAK

    Fairchild Semiconductor

    		 5,002 -
    RFQ
    		FQB19N10LTM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V, 10V 100mOhm @ 9.5A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 3.75W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    BUK6507-55C,127

    BUK6507-55C,127

    MOSFET N-CH 55V 100A TO220AB

    NXP USA Inc.

    		 6,642 -
    RFQ
    		BUK6507-55C,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 2.8V @ 1mA 82 nC @ 10 V ±16V 5160 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FDB20AN06A0

    FDB20AN06A0

    MOSFET N-CH 60V 9A/45A TO263AB

    Fairchild Semiconductor

    		 4,310 -
    RFQ
    		FDB20AN06A0

    Datenblatt

         		PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF820

    IRF820

    2.5A, 500V, 3.000 OHM, N-CHANNEL

    Harris Corporation

    		 3,895 -
    RFQ
    		IRF820

    Datenblatt

         		PowerMESH™ II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 315 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    FDS6630A

    FDS6630A

    MOSFET N-CH 30V 6.5A 8SOIC

    onsemi

    		 6,060 -
    RFQ
    		FDS6630A

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 38mOhm @ 6.5A, 10V 3V @ 250µA 7 nC @ 5 V ±20V 460 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NDPL070N10BG

    NDPL070N10BG

    MOSFET N-CH 100V 70A TO220-3

    onsemi

    		 8,374 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 10V, 15V 10.8mOhm @ 35A, 15V 4V @ 1mA 26 nC @ 10 V ±20V 2010 pF @ 50 V - 2.1W (Ta), 72W (Tc) 175°C (TJ) - - Through Hole TO-220-3
    FDU8876

    FDU8876

    MOSFET N-CH 30V 15A/73A IPAK

    Fairchild Semiconductor

    		 2,750 -
    RFQ
    		FDU8876

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 73A (Tc) 4.5V, 10V 8.2mOhm @ 35A, 10V 2.5V @ 250µA 47 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    HUF76113SK8

    HUF76113SK8

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,960 -
    RFQ
    		HUF76113SK8

    Datenblatt

         		UltraFET™ 8-VFSOP (0.091", 2.30mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 30mOhm @ 6.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 585 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount US8
    FQB5N60CTM

    FQB5N60CTM

    4.5A, 600V, 2OHM, N CHANNEL , D2

    Fairchild Semiconductor

    		 1,618 -
    RFQ
    		FQB5N60CTM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB (D2PAK)
    RFP2N20

    RFP2N20

    N-CHANNEL, MOSFET

    Harris Corporation

    		 1,552 -
    RFQ
    		RFP2N20

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3.5Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    RFD16N05LSM

    RFD16N05LSM

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 1,356 -
    RFQ
    		RFD16N05LSM

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 4V, 5V 47mOhm @ 16A, 5V 2V @ 250mA 80 nC @ 10 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    FQD2N90TF

    FQD2N90TF

    MOSFET N-CH 900V 1.7A DPAK

    Fairchild Semiconductor

    		 1,054 -
    RFQ
    		FQD2N90TF

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    IPP60R600P6XKSA1

    IPP60R600P6XKSA1

    MOSFET N-CH 600V 7.3A TO220-3

    Infineon Technologies

    		 5,690 -
    RFQ
    		IPP60R600P6XKSA1

    Datenblatt

         		CoolMOS™ P6 TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    NDF10N60ZG

    NDF10N60ZG

    MOSFET N-CH 600V 10A TO220FP

    onsemi

    		 9,330 -
    RFQ
    		NDF10N60ZG

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.5V @ 100µA 68 nC @ 10 V ±30V 1645 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    SPP03N60S5XKSA1

    SPP03N60S5XKSA1

    LOW POWER_LEGACY

    Infineon Technologies

    		 3,579 -
    RFQ
    		SPP03N60S5XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 5.5V @ 135µA 16 nC @ 10 V ±20V 420 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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