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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PMN40UPE,115

    PMN40UPE,115

    MOSFET P-CH 20V 4.7A 6TSOP

    Nexperia USA Inc.

    		 3,906 -
    RFQ
    		PMN40UPE,115

    Datenblatt

         		- SC-74, SOT-457 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V 950mV @ 250µA 23 nC @ 4.5 V ±8V 1820 pF @ 10 V - 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    IPB80N04S3H4ATMA1

    IPB80N04S3H4ATMA1

    MOSFET N-CH 40V 80A TO263-3

    Infineon Technologies

    		 6,795 -
    RFQ
    		IPB80N04S3H4ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.5mOhm @ 80A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    NTLUS3A40PZTBG

    NTLUS3A40PZTBG

    MOSFET P-CH 20V 4A 6UDFN

    onsemi

    		 4,255 -
    RFQ
    		NTLUS3A40PZTBG

    Datenblatt

         		µCool™ 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 29mOhm @ 6.4A, 4.5V 1V @ 250µA 29 nC @ 4.5 V ±8V 2600 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (2x2)
    IPP139N08N3G

    IPP139N08N3G

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 11,261 -
    RFQ
    		IPP139N08N3G

    Datenblatt

         		OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    BUZ76A

    BUZ76A

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 10,000 -
    RFQ
    		BUZ76A

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 1mA - ±20V 500 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    1HN04CH-TL-W

    1HN04CH-TL-W

    MOSFET N-CH 100V 270MA 3CPH

    onsemi

    		 6,893 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 270mA (Ta) 4V, 10V 8Ohm @ 140mA, 10V 2.6V @ 100µA 0.9 nC @ 10 V ±20V 15 pF @ 20 V - - 150°C (TJ) - - Surface Mount 3-CPH
    G1006LE

    G1006LE

    N100V,RD(MAX)<150M@10V,RD(MAX)<1

    Goford Semiconductor

    		 7,247 -
    RFQ
    		G1006LE

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 150mOhm @ 3A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 532 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    BUZ31H3046XKSA1

    BUZ31H3046XKSA1

    MOSFET N-CH 200V 14.5A TO262-3

    Infineon Technologies

    		 3,700 -
    RFQ
    		BUZ31H3046XKSA1

    Datenblatt

         		SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    GSFP1036

    GSFP1036

    MOSFET, N-CH, SINGLE, 35A, 100V,

    Good-Ark Semiconductor

    		 5,956 -
    RFQ
    		GSFP1036

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 22mOhm @ 12A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1030 pF @ 50 V - 68W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (5.1x5.71)
    UPA2713GR-E1-A

    UPA2713GR-E1-A

    P-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 5,000 -
    RFQ
    		UPA2713GR-E1-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    9926

    9926

    N20V,RD(MAX)<[email protected],RD(MAX)<30

    Goford Semiconductor

    		 3,913 -
    RFQ
    		9926

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 6A - 25mOhm @ 4.5A, 4.5V 1.2V @ 250µA 10 nC @ 4.5 V ±10V 640 pF @ 10 V - 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    BUK9520-100A,127

    BUK9520-100A,127

    MOSFET N-CH 100V 63A SOT78

    NXP USA Inc.

    		 2,996 -
    RFQ

    -

    		 * - Tube Active - - - - - - - - - - - - - - - - -
    PJS6412_S1_00001

    PJS6412_S1_00001

    30V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,934 -
    RFQ
    		PJS6412_S1_00001

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 23mOhm @ 8A, 10V 2.5V @ 250µA 4.3 nC @ 4.5 V ±20V 392 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    UPA1725G-E1-A

    UPA1725G-E1-A

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 2,500 -
    RFQ
    		UPA1725G-E1-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    2SK4076-ZK-E1-AY

    2SK4076-ZK-E1-AY

    N-CHANNEL MOSFET

    NEC Corporation

    		 2,500 -
    RFQ
    		2SK4076-ZK-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 16mOhm @ 17.5A, 10V 2.5V @ 1mA 24 nC @ 10 V ±20V 1200 pF @ 10 V - 1W (Ta), 26W (Tc) 150°C - - Surface Mount TO-252 (MP-3ZK)
    BSO051N03MS G

    BSO051N03MS G

    MOSFET N-CH 30V 14A 8DSO

    Infineon Technologies

    		 2,168 -
    RFQ
    		BSO051N03MS G

    Datenblatt

         		OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 5.1mOhm @ 18A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    SPD30N03S2L07GBTMA1

    SPD30N03S2L07GBTMA1

    MOSFET N-CH 30V 30A TO252-3

    Infineon Technologies

    		 3,821 -
    RFQ
    		SPD30N03S2L07GBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    RJK0358DSP-WS#J0

    RJK0358DSP-WS#J0

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 1,520 -
    RFQ
    		RJK0358DSP-WS#J0

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    IPS60R400CEAKMA1

    IPS60R400CEAKMA1

    CONSUMER

    Infineon Technologies

    		 6,004 -
    RFQ
    		IPS60R400CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14.7A (Tj) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 112W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    SPA07N60C2

    SPA07N60C2

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 1,403 -
    RFQ
    		SPA07N60C2

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
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