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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AUIRLL024NTR-IR

    AUIRLL024NTR-IR

    AUTOMOTIVE POWER MOSFET

    International Rectifier

    		 3,529 -
    RFQ
    		AUIRLL024NTR-IR

    Datenblatt

         		HEXFET® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    IPP45P03P4L11AKSA1

    IPP45P03P4L11AKSA1

    MOSFET P-CH 30V 45A TO220-3

    Infineon Technologies

    		 9,618 -
    RFQ
    		IPP45P03P4L11AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IRF7241TR

    IRF7241TR

    MOSFET P-CH 40V 6.2A 8SOIC

    UMW

    		 3,000 -
    RFQ
    		IRF7241TR

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    FDD5810

    FDD5810

    MOSFET N-CH 60V 7.4A/37A DPAK

    UMW

    		 2,500 -
    RFQ
    		FDD5810

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V 2V @ 50µA 34 nC @ 10 V ±20V 1890 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    IPD50N06S2-14

    IPD50N06S2-14

    MOSFET N-CH 60V 50A DPAK

    UMW

    		 2,500 -
    RFQ
    		IPD50N06S2-14

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    FDD8874

    FDD8874

    MOSFET N-CH 30V 116A DPAK

    UMW

    		 2,500 -
    RFQ
    		FDD8874

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUF76609D3

    HUF76609D3

    MOSFET N-CH 100V 10A DPAK

    UMW

    		 2,500 -
    RFQ
    		HUF76609D3

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    G2N65K

    G2N65K

    MOSFET N-CH 650V 2A 35W TO-252

    Goford Semiconductor

    		 2,455 -
    RFQ
    		G2N65K

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 3.2V @ 250µA 8 nC @ 10 V ±20V 250 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    RM40P40LD

    RM40P40LD

    MOSFET P-CHANNEL 40V 40A TO252-2

    Rectron USA

    		 2,432 -
    RFQ
    		RM40P40LD

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 10V 14mOhm @ 12A, 10V 3V @ 250µA - ±20V 2960 pF @ 20 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-2
    100N03A

    100N03A

    TO-252 MOSFETS ROHS

    UMW

    		 2,335 -
    RFQ
    		100N03A

    Datenblatt

         		UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUFA76439P3

    HUFA76439P3

    MOSFET N-CH 60V 75A TO220-3

    Fairchild Semiconductor

    		 1,551 -
    RFQ
    		HUFA76439P3

    Datenblatt

         		UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    HUF75333S3

    HUF75333S3

    MOSFET N-CH 55V 66A D2PAK

    Harris Corporation

    		 1,257 -
    RFQ
    		HUF75333S3

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    HUF75333S3

    HUF75333S3

    MOSFET N-CH 55V 66A I2PAK

    Fairchild Semiconductor

    		 1,160 -
    RFQ
    		HUF75333S3

    Datenblatt

         		UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
    IRF3709PBF

    IRF3709PBF

    MOSFET N-CH 30V 90A TO220AB

    Infineon Technologies

    		 2,281 -
    RFQ
    		IRF3709PBF

    Datenblatt

         		HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IRFD9113

    IRFD9113

    -0.6A, -80V, 1.6 OHM, P-CHANNEL

    Harris Corporation

    		 1,090 -
    RFQ
    		IRFD9113

    Datenblatt

         		- 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-DIP, Hexdip, HVMDIP
    IPP042N03LGXKSA1

    IPP042N03LGXKSA1

    MOSFET N-CH 30V 70A TO220-3

    Infineon Technologies

    		 4,551 -
    RFQ
    		IPP042N03LGXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    FQPF9N25CYDTU

    FQPF9N25CYDTU

    MOSFET N-CH 250V 8.8A TO220F-3

    onsemi

    		 5,913 -
    RFQ
    		FQPF9N25CYDTU

    Datenblatt

         		QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
    NTMFS4927NT1G

    NTMFS4927NT1G

    MOSFET N-CH 30V 7.9A/38A 5DFN

    onsemi

    		 5,911 -
    RFQ
    		NTMFS4927NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.9A (Ta), 38A (Tc) 4.5V, 10V 7.3mOhm @ 30A, 10V 2.2V @ 250µA 16 nC @ 10 V ±20V 913 pF @ 15 V - 920mW (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    FDD6635

    FDD6635

    MOSFET N-CH 35V 15A/59A DPAK

    onsemi

    		 9,820 -
    RFQ
    		FDD6635

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35 V 15A (Ta), 59A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 3V @ 250µA 36 nC @ 10 V ±20V 1400 pF @ 20 V - 3.8W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    CPH3350-TL-W

    CPH3350-TL-W

    MOSFET P-CH 20V 3A 3CPH

    onsemi

    		 5,364 -
    RFQ
    		CPH3350-TL-W

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 83mOhm @ 1.5A, 4.5V - 4.6 nC @ 4.5 V ±10V 375 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 3-CPH
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