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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP65R600E6XKSA1

    IPP65R600E6XKSA1

    MOSFET N-CH 650V 7.3A TO220-3

    Infineon Technologies

    		 9,859 -
    RFQ
    		IPP65R600E6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    NTMFS4898NFT1G

    NTMFS4898NFT1G

    MOSFET N-CH 30V SO-8FL

    onsemi

    		 7,173 -
    RFQ

    -

    		 - 8-PowerTDFN, 5 Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.2A (Ta), 117A (Tc) - 3mOhm @ 30A, 10V 2.5V @ 1mA 49.5 nC @ 10 V - 3233 pF @ 12 V - - - - - Surface Mount 5-DFN (5x6) (8-SOFL)
    RJK03K7DPA-00#J5A

    RJK03K7DPA-00#J5A

    N-CHANNEL POWER SWITCHING MOSFET

    Renesas Electronics Corporation

    		 21,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    FDMC6296

    FDMC6296

    MOSFET N-CH 30V 11.5A 8MLP

    Fairchild Semiconductor

    		 20,197 -
    RFQ
    		FDMC6296

    Datenblatt

         		PowerTrench® 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10.5mOhm @ 11.5A, 10V 3V @ 250µA 19 nC @ 5 V ±20V 2141 pF @ 15 V - 900mW (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    UPA2726UT1A-E1-AY

    UPA2726UT1A-E1-AY

    MOSFET N-CH 30V 20A 8DFN

    Renesas Electronics Corporation

    		 18,000 -
    RFQ
    		UPA2726UT1A-E1-AY

    Datenblatt

         		- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) - 7mOhm @ 10A, 10V 2.5V @ 1mA 15 nC @ 5 V - 1720 pF @ 15 V - - - - - Surface Mount 8-DFN3333 (3.3x3.3)
    NTMFS4108NT1G

    NTMFS4108NT1G

    MOSFET N-CH 30V 13.5A 5DFN

    onsemi

    		 4,286 -
    RFQ
    		NTMFS4108NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 2.2mOhm @ 21A, 10V 2.5V @ 250µA 54 nC @ 4.5 V ±20V 6000 pF @ 15 V - 1.1W (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SPS04N60C3BKMA1

    SPS04N60C3BKMA1

    MOSFET N-CH 650V 4.5A TO251-3

    Infineon Technologies

    		 5,915 -
    RFQ
    		SPS04N60C3BKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
    NTMFS4108NT3G

    NTMFS4108NT3G

    MOSFET N-CH 30V 13.5A 5DFN

    onsemi

    		 6,716 -
    RFQ
    		NTMFS4108NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 2.2mOhm @ 21A, 10V 2.5V @ 250µA 54 nC @ 4.5 V ±20V 6000 pF @ 15 V - 1.1W (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SSFB2309L

    SSFB2309L

    MOSFET, P-CH, SINGLE, -8.5A, -20

    Good-Ark Semiconductor

    		 11,495 -
    RFQ
    		SSFB2309L

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 8.5A (Tc) 1.8V, 4.5V 28mOhm @ 4A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±10V 2100 pF @ 15 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
    AUIRLR024N

    AUIRLR024N

    AUTOMOTIVE HEXFET N-CHANNEL

    International Rectifier

    		 11,025 -
    RFQ
    		AUIRLR024N

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    IPS60R280PFD7SAKMA1

    IPS60R280PFD7SAKMA1

    CONSUMER PG-TO251-3

    Infineon Technologies

    		 5,835 -
    RFQ
    		IPS60R280PFD7SAKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 15.3 nC @ 10 V ±20V 656 pF @ 400 V - 51W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    MTP5N40E

    MTP5N40E

    N-CHANNEL POWER MOSFET

    onsemi

    		 7,418 -
    RFQ
    		MTP5N40E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDU8580

    FDU8580

    MOSFET N-CH 20V 35A IPAK

    Fairchild Semiconductor

    		 7,200 -
    RFQ
    		FDU8580

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IPD60R380E6ATMA2

    IPD60R380E6ATMA2

    MOSFET N-CH 600V 10.6A TO252-3

    Infineon Technologies

    		 7,029 -
    RFQ
    		IPD60R380E6ATMA2

    Datenblatt

         		CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    FTS1011-TL-E

    FTS1011-TL-E

    PCH 2.5V DRIVE SERIES

    onsemi

    		 6,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    NTMFS4898NFT3G

    NTMFS4898NFT3G

    MOSFET N-CH 30V 13.2A/117A 5DFN

    onsemi

    		 7,640 -
    RFQ

    -

    		 - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.2A (Ta), 117A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2.5V @ 1mA 49.5 nC @ 10 V ±20V 3233 pF @ 12 V - 930mW (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SIA4371EDJ-T1-GE3

    SIA4371EDJ-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,510 -
    RFQ
    		SIA4371EDJ-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta), 9A (Tc) 2.5V, 10V 45mOhm @ 3.7A, 10V 1.5V @ 250µA 35 nC @ 10 V ±12V - - 2.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
    FW238-NMM-TL-E

    FW238-NMM-TL-E

    RF MOSFET

    onsemi

    		 5,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    ISL9N304AP3

    ISL9N304AP3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 5,000 -
    RFQ
    		ISL9N304AP3

    Datenblatt

         		UltraFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 105 nC @ 10 V ±20V 4075 pF @ 15 V - 145W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    RF1S17N06LSM

    RF1S17N06LSM

    LOGIC LEVEL GATE (5V) DEVICE

    Harris Corporation

    		 4,000 -
    RFQ
    		RF1S17N06LSM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 17A - - - - - - - - - - - Surface Mount TO-263AB
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