FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SK3491-E

2SK3491-E

NCH 4V DRIVE SERIES

onsemi

1,850 -
RFQ
2SK3491-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
RW1C026ZPT2CR

RW1C026ZPT2CR

MOSFET P-CH 20V 2.5A 6WEMT

Rohm Semiconductor

1,845 -
RFQ
RW1C026ZPT2CR

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 1.5V, 4.5V 70mOhm @ 2.5A, 4.5V 1V @ 1mA 10 nC @ 4.5 V ±10V 1250 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
HUF76129S3S

HUF76129S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,600 -
RFQ
HUF76129S3S

Datenblatt

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 16mOhm @ 56A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 1350 pF @ 25 V - 105W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
FQP7P20

FQP7P20

MOSFET P-CH 200V 7.3A TO220-3

Fairchild Semiconductor

1,518 -
RFQ
FQP7P20

Datenblatt

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 7.3A (Tc) 10V 690mOhm @ 3.65A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 770 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FDS6692

FDS6692

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

1,349 -
RFQ
FDS6692

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 12mOhm @ 12A, 10V 3V @ 250µA 25 nC @ 5 V ±16V 2164 pF @ 15 V - 1W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
FQPF6N40CF

FQPF6N40CF

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor

1,300 -
RFQ
FQPF6N40CF

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

Fairchild Semiconductor

1,244 -
RFQ
FQP32N12V2

Datenblatt

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FQPF5P20RDTU

FQPF5P20RDTU

MOSFET P-CH 200V 2.15A TO220F

onsemi

6,571 -
RFQ
FQPF5P20RDTU

Datenblatt

- TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.15A (Tc) 10V 1.4Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
FCPF600N65S3R0L

FCPF600N65S3R0L

MOSFET N-CH 650V 6A TO220F-3

onsemi

5,675 -
RFQ
FCPF600N65S3R0L

Datenblatt

SuperFET® III TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 3A, 10V 4.5V @ 600µA 11 nC @ 10 V ±30V 465 pF @ 400 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
NTMS4801NR2G

NTMS4801NR2G

MOSFET N-CH 30V 7.5A 8SOIC

onsemi

6,662 -
RFQ
NTMS4801NR2G

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4.5V, 10V 9mOhm @ 12A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 2201 pF @ 25 V - 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NDS8410A

NDS8410A

MOSFET N-CH 30V 10.8A 8SOIC

Fairchild Semiconductor

195,663 -
RFQ
NDS8410A

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.8A (Ta) 4.5V, 10V 12mOhm @ 10.8A, 10V 3V @ 250µA 22 nC @ 5 V ±20V 1620 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
MTB16N25ET4

MTB16N25ET4

N-CHANNEL POWER MOSFET

onsemi

184,800 -
RFQ
MTB16N25ET4

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IPP65R600C6XKSA1

IPP65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies

6,284 -
RFQ
IPP65R600C6XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
FDU6680

FDU6680

MOSFET N-CH 30V 12A/46A IPAK

Fairchild Semiconductor

82,141 -
RFQ
FDU6680

Datenblatt

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 46A (Tc) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1230 pF @ 15 V - 3.3W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRLR024NTRL

AUIRLR024NTRL

MOSFET N-CH 55V 17A DPAK

International Rectifier

75,828 -
RFQ
AUIRLR024NTRL

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
UPA2807T1L-E1-AT

UPA2807T1L-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

75,000 -
RFQ
UPA2807T1L-E1-AT

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4C032NT1G

NTMFS4C032NT1G

MOSFET N-CH 30V 13A/38A 5DFN

onsemi

9,438 -
RFQ
NTMFS4C032NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 38A (Tc) 4.5V, 10V 7.35mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 2.46W (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IPD50N04S309ATMA1

IPD50N04S309ATMA1

MOSFET N-CH 40V 50A TO252-3

Infineon Technologies

2,338 -
RFQ
IPD50N04S309ATMA1

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 28µA 26 nC @ 10 V ±20V 1750 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
NVC6S5A354PLZT1G

NVC6S5A354PLZT1G

MOSFET P-CH 60V 4A 6CPH

onsemi

5,374 -
RFQ
NVC6S5A354PLZT1G

Datenblatt

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4V, 10V 100mOhm @ 2A, 10V 2.6V @ 1mA 14 nC @ 10 V ±20V 600 pF @ 20 V - 1.9W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-CPH
RJK03C9DNS-00#J5

RJK03C9DNS-00#J5

POWER MOSFET

Renesas Electronics Corporation

50,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
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