FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
G090P02S

G090P02S

MOSFET P-CH 20V 11A SOP-8

Goford Semiconductor

4,000 -
RFQ
G090P02S

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 9mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2225 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
RF1S25N06SM

RF1S25N06SM

N-CHANNEL POWER MOSFET

Harris Corporation

3,005 -
RFQ
RF1S25N06SM

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 25A - - - - - - - - - - - Surface Mount TO-263AB
UPA2726UT1A-E2-AY

UPA2726UT1A-E2-AY

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

3,000 -
RFQ
UPA2726UT1A-E2-AY

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
HUFA76429D3S

HUFA76429D3S

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

1,800 -
RFQ
HUFA76429D3S

Datenblatt

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
RFD16N03LSM9A

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation

1,540 -
RFQ
RFD16N03LSM9A

Datenblatt

- - Bulk Active - - - - - - - - - - - - - - - - -
BUK9Y2R4-40HX

BUK9Y2R4-40HX

BUK9Y2R4-40H/SOT669/LFPAK

Nexperia USA Inc.

7,115 -
RFQ
BUK9Y2R4-40HX

Datenblatt

- - Tape & Reel (TR) Active - - - 120A (Tc) - - - - +16V, -10V - - 163W (Tc) - Automotive AEC-Q101 - -
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor

1,472 -
RFQ
HUFA75637P3

Datenblatt

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRF9510

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation

1,187 -
RFQ
IRF9510

Datenblatt

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
STF7N60DM2

STF7N60DM2

MOSFET N-CH 600V 6A TO220FP

STMicroelectronics

1,959 -
RFQ
STF7N60DM2

Datenblatt

MDmesh™ DM2 TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 900mOhm @ 3A, 10V 4.75V @ 250µA 7.5 nC @ 10 V ±25V 324 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STL55NH3LL

STL55NH3LL

MOSFET N-CH 30V 55A POWERFLAT

STMicroelectronics

5,892 -
RFQ
STL55NH3LL

Datenblatt

STripFET™ 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 8.8mOhm @ 7.5A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±16V 965 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6)
NTD80N02-001

NTD80N02-001

MOSFET N-CH 24V 80A IPAK

onsemi

2,653 -
RFQ
NTD80N02-001

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 80A (Tc) 4.5V, 10V 5.8mOhm @ 80A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 2600 pF @ 20 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
IRFD9120PBF

IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

Vishay Siliconix

12,419 -
RFQ
IRFD9120PBF

Datenblatt

- 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 600mOhm @ 600mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
FQPF13N10

FQPF13N10

MOSFET N-CH 100V 8.7A TO220F

Fairchild Semiconductor

146,156 -
RFQ
FQPF13N10

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 180mOhm @ 4.35A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 450 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
FDS6673BZ-G

FDS6673BZ-G

-30V P-CHANNEL POWERTRENCH MOSFE

onsemi

126,525 -
RFQ

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 7.8mOhm @ 14.5A, 10V 3V @ 250µA 65 nC @ 5 V ±25V 4700 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDU6682

FDU6682

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

115,200 -
RFQ
FDU6682

Datenblatt

PowerTrench® TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-251 (IPAK)
FDG332PZ

FDG332PZ

MOSFET P-CH 20V 2.6A SC88

onsemi

5,921 -
RFQ
FDG332PZ

Datenblatt

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.8V, 4.5V 95mOhm @ 2.6A, 4.5V 1.5V @ 250µA 10.8 nC @ 4.5 V ±8V 560 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
SPP04N60S5

SPP04N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies

41,600 -
RFQ
SPP04N60S5

Datenblatt

CoolMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
FDP7042L

FDP7042L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

33,223 -
RFQ
FDP7042L

Datenblatt

PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V 2V @ 250mA 51 nC @ 4.5 V ±12V 2418 pF @ 15 V - 83W (Ta) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRLR120ATF

IRLR120ATF

MOSFET N-CH 100V 8.4A DPAK

Fairchild Semiconductor

30,174 -
RFQ
IRLR120ATF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.4A (Tc) 5V 220mOhm @ 4.2A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 440 pF @ 25 V - 2.5W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
2SJ637-S-TL-E

2SJ637-S-TL-E

PCH 4V DRIVE SERIES

onsemi

27,300 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
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