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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SFP9540

    SFP9540

    MOSFET P-CH 100V 17A TO220-3

    Fairchild Semiconductor

    		 4,583 -
    RFQ
    		SFP9540

    Datenblatt

         		- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 200mOhm @ 8.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1535 pF @ 25 V - 132W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    BUK9237-55A,118

    BUK9237-55A,118

    MOSFET N-CH 55V 32A DPAK

    Nexperia USA Inc.

    		 3,437 -
    RFQ
    		BUK9237-55A,118

    Datenblatt

         		TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 5V, 10V 33mOhm @ 15A, 10V 2V @ 1mA 17.6 nC @ 5 V ±15V 1236 pF @ 25 V - 77W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    2N7002E-T1-GE3

    2N7002E-T1-GE3

    MOSFET N-CH 60V 240MA TO236

    Vishay Siliconix

    		 4,324 -
    RFQ
    		2N7002E-T1-GE3

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 21 pF @ 5 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236
    GSFD9R706

    GSFD9R706

    MOSFET, N-CH, SINGLE, 60.00A, 60

    Good-Ark Semiconductor

    		 4,175 -
    RFQ
    		GSFD9R706

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 9.7mOhm @ 13A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 2200 pF @ 400 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    GT095N04D3

    GT095N04D3

    MOSFET N-CH 40V 47A DFN3*3-8L

    Goford Semiconductor

    		 4,049 -
    RFQ
    		GT095N04D3

    Datenblatt

         		SGT 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Tc) 4.5V, 10V 6mOhm @ 3A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 947 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G33N03S

    G33N03S

    N30V,RD(MAX)<12M@10V,RD(MAX)<13M

    Goford Semiconductor

    		 3,930 -
    RFQ
    		G33N03S

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 12mOhm @ 8A, 10V 1.1V @ 250µA 13 nC @ 15 V ±20V 1550 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G10N03S

    G10N03S

    N30V,RD(MAX)<12M@10V,RD(MAX)<16M

    Goford Semiconductor

    		 3,500 -
    RFQ
    		G10N03S

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 9mOhm @ 6A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 832 pF @ 15 V - 2.23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    G7P03S

    G7P03S

    P30V,RD(MAX)<22M@-10V,RD(MAX)<33

    Goford Semiconductor

    		 3,454 -
    RFQ
    		G7P03S

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 22mOhm @ 3A, 10V 2V @ 250µA 24.5 nC @ 10 V ±20V 1253 pF @ 15 V - 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    FQB9N25CTM

    FQB9N25CTM

    MOSFET N-CH 250V 8.8A D2PAK

    Fairchild Semiconductor

    		 3,222 -
    RFQ
    		FQB9N25CTM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDS3612

    FDS3612

    MOSFET N-CH 100V 3.4A 8SOIC

    Fairchild Semiconductor

    		 3,042 -
    RFQ
    		FDS3612

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 120mOhm @ 3.4A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 2.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    NDS331N-EV

    NDS331N-EV

    MOSFET N-CH 20V 1.3A SOT-23

    EVVO

    		 3,000 -
    RFQ
    		NDS331N-EV

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 2.5V, 4.5V 60mOhm @ 2.3A, 4.5V 1.2V @ 250µA 5 nC @ 4.5 V ±12V 260 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRF7403TR

    IRF7403TR

    MOSFET N-CH 30V 8.5A 8SOIC

    UMW

    		 3,000 -
    RFQ
    		IRF7403TR

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    G2012

    G2012

    N20V,RD(MAX)<[email protected],RD(MAX)<18

    Goford Semiconductor

    		 2,944 -
    RFQ
    		G2012

    Datenblatt

         		TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 12mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 10 V ±10V 1255 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
    FDC642P-F085

    FDC642P-F085

    MOSFET P-CH 20V 4A SUPERSOT6

    onsemi

    		 3,756 -
    RFQ
    		FDC642P-F085

    Datenblatt

         		PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 65mOhm @ 4A, 4.5V 1.5V @ 250µA 16 nC @ 4.5 V ±8V 640 pF @ 10 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SuperSOT™-6
    FDU068AN03L

    FDU068AN03L

    MOSFET N-CH 30V 17A/35A IPAK

    Fairchild Semiconductor

    		 2,514 -
    RFQ
    		FDU068AN03L

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    PJW7N06A-AU_R2_000A1

    PJW7N06A-AU_R2_000A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,500 -
    RFQ
    		PJW7N06A-AU_R2_000A1

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6.6A (Ta) 4.5V, 10V 34mOhm @ 6A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 1173 pF @ 25 V - 3.7W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223
    SUD23N06-31

    SUD23N06-31

    MOSFET N-CH 60V 35A DPAK

    UMW

    		 2,500 -
    RFQ
    		SUD23N06-31

    Datenblatt

         		* TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA - ±20V - - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    4N60L

    4N60L

    MOSFET N-CH 600V 4A DPAK

    UMW

    		 2,500 -
    RFQ
    		4N60L

    Datenblatt

         		* TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.4Ohm @ 2A, 10V 4V @ 250µA - ±30V - - 104W 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDD24AN06LA0

    FDD24AN06LA0

    MOSFET N-CH 60V 7.1A/40A DPAK

    UMW

    		 2,500 -
    RFQ
    		FDD24AN06LA0

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IRLL014NTR

    IRLL014NTR

    MOSFET N-CH 55V 2A SOT223

    UMW

    		 2,500 -
    RFQ
    		IRLL014NTR

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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