FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SK4077-ZK-E1-AY

2SK4077-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

7,500 -
RFQ
2SK4077-ZK-E1-AY

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IPN50R3K0CEATMA1

IPN50R3K0CEATMA1

MOSFET N-CH 500V 2.6A SOT223

Infineon Technologies

6,541 -
RFQ
IPN50R3K0CEATMA1

Datenblatt

CoolMOS™ CE TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 13V 3Ohm @ 400mA, 13V 3.5V @ 30µA 4.3 nC @ 10 V ±20V 84 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-3
PJS6417_S1_00001

PJS6417_S1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,697 -
RFQ
PJS6417_S1_00001

Datenblatt

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 1.8V, 4.5V 35mOhm @ 6.5A, 4.5V 900mV @ 250µA 18.9 nC @ 4.5 V ±8V 1760 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
IRLML2502

IRLML2502

20V 4.2A 1.25W [email protected],4.2A 1.

UMW

5,399 -
RFQ
IRLML2502

Datenblatt

UMW TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.2A, 4.5V 1.2V @ 50µA 10 nC @ 4.5 V ±12V 300 pF @ 10 V - 1.25W (Ta) 150°C (TJ) - - Surface Mount SOT-23
PJQ2460_R1_00001

PJQ2460_R1_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,370 -
RFQ
PJQ2460_R1_00001

Datenblatt

- 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 75mOhm @ 3.2A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 509 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020B-6
UPA2734GR-E1-AT

UPA2734GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,000 -
RFQ
UPA2734GR-E1-AT

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
BUK965R4-40E,118

BUK965R4-40E,118

MOSFET N-CH 40V 75A D2PAK

Nexperia USA Inc.

5,861 -
RFQ
BUK965R4-40E,118

Datenblatt

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V 4.4mOhm @ 25A, 10V 2.1V @ 1mA 33.9 nC @ 5 V ±10V 4483 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
UPA2727UT1A-E1-AY

UPA2727UT1A-E1-AY

MOSFET N-CH 30V 16A 8DFN

Renesas Electronics Corporation

3,000 -
RFQ
UPA2727UT1A-E1-AY

Datenblatt

- 8-VDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) - 9.6mOhm @ 8A, 10V 2.5V @ 1mA 11 nC @ 5 V - 1170 pF @ 15 V - - - - - Surface Mount 8-DFN3333 (3.3x3.3)
SI2300A

SI2300A

20V 6A [email protected],6A 1V@50A N CHA

UMW

2,598 -
RFQ
SI2300A

Datenblatt

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 25mOhm @ 6A, 4.5V 1V @ 50µA 10 nC @ 4.5 V ±12V 574 pF @ 10 V - - 150°C (TJ) - - Surface Mount SOT-23
SPD50N03S2L-06

SPD50N03S2L-06

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies

9,842 -
RFQ
SPD50N03S2L-06

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
G11S

G11S

P-20V,RD(MAX)<[email protected],RD(MAX

Goford Semiconductor

1,660 -
RFQ
G11S

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 18.4mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2470 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PMV27UPEAR

PMV27UPEAR

MOSFET P-CH 20V 4.5A TO236AB

Nexperia USA Inc.

1,461 -
RFQ
PMV27UPEAR

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 32mOhm @ 4.5A, 4.5V 950mV @ 250µA 22.1 nC @ 4.5 V ±8V 1820 pF @ 10 V - 490mW (Ta), 4.15W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-236AB
NTMFS4C922NAT1G

NTMFS4C922NAT1G

TRENCH 6 30V NCH

onsemi

4,500 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
STS14N3LLH5

STS14N3LLH5

MOSFET N-CH 30V 14A 8SO

STMicroelectronics

5,822 -
RFQ
STS14N3LLH5

Datenblatt

STripFET™ V 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Tc) 4.5V, 10V 6mOhm @ 7A, 10V 1V @ 250µA 12 nC @ 4.5 V ±22V 1500 pF @ 25 V - 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
2SK2623-TL-E

2SK2623-TL-E

N-CHANNEL SILICON MOSFET

onsemi

63,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK2623-E

2SK2623-E

NCH 15V DRIVE SERIES

onsemi

62,470 -
RFQ
2SK2623-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK4198FS

2SK4198FS

MOSFET N-CH 600V 4A TO220-3

onsemi

5,627 -
RFQ

-

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.34Ohm @ 2.5A, 10V - 14.3 nC @ 10 V ±30V 360 pF @ 30 V - 2W (Ta), 30W (Tc) 150°C (TJ) - - Through Hole TO-220-3
FDPF5N50UTYDTU

FDPF5N50UTYDTU

TRANS MOSFET N-CH 500V 4A T/R

Fairchild Semiconductor

49,600 -
RFQ
FDPF5N50UTYDTU

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFD113

IRFD113

MOSFET N-CH 60V 800MA 4DIP

Harris Corporation

46,955 -
RFQ
IRFD113

Datenblatt

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
SPU02N60S5BKMA1

SPU02N60S5BKMA1

MOSFET N-CH 600V 1.8A TO251-3

Infineon Technologies

4,611 -
RFQ
SPU02N60S5BKMA1

Datenblatt

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
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