FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

Fairchild Semiconductor

2,000 -
RFQ
FQPF19N20T

Datenblatt

QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
SPD07N60S5BTMA1

SPD07N60S5BTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

1,019 -
RFQ
SPD07N60S5BTMA1

Datenblatt

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252
FDFMA2P853

FDFMA2P853

MOSFET P-CH 20V 3A 6MICROFET

onsemi

4,153 -
RFQ
FDFMA2P853

Datenblatt

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V 1.3V @ 250µA 6 nC @ 4.5 V ±8V 435 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
UPA2200T1M-T2-AT

UPA2200T1M-T2-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,086,000 -
RFQ
UPA2200T1M-T2-AT

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2210T1M-T1-AT

UPA2210T1M-T1-AT

MOSFET P-CH 20V 7.2A 8VSOF

Renesas Electronics Corporation

180,000 -
RFQ
UPA2210T1M-T1-AT

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta) - 29mOhm @ 7.2A, 4.5V 1.5V @ 1mA 16.3 nC @ 4.5 V - 1350 pF @ 10 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
UPA2210T1M-T2-AT

UPA2210T1M-T2-AT

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

180,000 -
RFQ
UPA2210T1M-T2-AT

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
SI1012R-T1-GE3

SI1012R-T1-GE3

MOSFET N-CH 20V 500MA SC75A

Vishay Siliconix

130,179 -
RFQ
SI1012R-T1-GE3

Datenblatt

TrenchFET® SC-75, SOT-416 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-75A
HUF76143P3

HUF76143P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

108,627 -
RFQ
HUF76143P3

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 5.5mOhm @ 75A, 10V 3V @ 250µA 114 nC @ 10 V ±20V 3900 pF @ 25 V - 225W (Tc) -40°C ~ 150°C (TJ) - - Through Hole TO-220-3
NTMS4816NR2G

NTMS4816NR2G

MOSFET N-CH 30V 6.8A 8SOIC

onsemi

2,812 -
RFQ
NTMS4816NR2G

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 4.5V, 10V 10mOhm @ 9A, 10V 3V @ 250µA 18.3 nC @ 10 V ±20V 1060 pF @ 25 V - 780mW (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SOIC
SI1013R-T1-GE3

SI1013R-T1-GE3

MOSFET P-CH 20V 350MA SC75A

Vishay Siliconix

74,355 -
RFQ
SI1013R-T1-GE3

Datenblatt

TrenchFET® SC-75, SOT-416 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-75A
2SK3092-TL-E

2SK3092-TL-E

NCH 15V DRIVE SERIES

onsemi

44,100 -
RFQ
2SK3092-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
FDS6676S

FDS6676S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

38,079 -
RFQ
FDS6676S

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 7.5mOhm @ 14.5A, 10V 3V @ 1mA 60 nC @ 5 V ±16V 4665 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NDD02N60ZT4G

NDD02N60ZT4G

MOSFET N-CH 600V 2.2A DPAK

onsemi

7,604 -
RFQ
NDD02N60ZT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 16 nC @ 10 V ±30V 325 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
FQP6N60C

FQP6N60C

MOSFET N-CH 600V 5.5A TO220-3

onsemi

3,581 -
RFQ
FQP6N60C

Datenblatt

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRF6811STRPBF

IRF6811STRPBF

MOSFET N-CH 25V 19A/74A DIRECTFT

International Rectifier

33,253 -
RFQ
IRF6811STRPBF

Datenblatt

DirectFET® DirectFET™ Isometric SQ Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) - 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric SQ
SFW9Z34TM

SFW9Z34TM

MOSFET P-CH 60V 18A D2PAK

Fairchild Semiconductor

20,800 -
RFQ
SFW9Z34TM

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 9A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1155 pF @ 25 V - 3.8W (Ta), 82W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDPF7N60NZT

FDPF7N60NZT

MOSFET N-CH 600V 6.5A TO220F

onsemi

9,096 -
RFQ
FDPF7N60NZT

Datenblatt

UniFET-II™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 1.25Ohm @ 3.25A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 730 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
JDX5012

JDX5012

NFET T0220FP JPN

onsemi

13,247 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3278-E

2SK3278-E

N-CHANNEL SILICON MOSFET

onsemi

11,667 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2201UT1M-T1-AT

UPA2201UT1M-T1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

9,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
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