FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SJ213-T1-AZ

2SJ213-T1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

57,695 -
RFQ
2SJ213-T1-AZ

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NVMFS5C468NLT1G

NVMFS5C468NLT1G

MOSFET N-CH 40V 5DFN

onsemi

2,250 -
RFQ
NVMFS5C468NLT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 37A (Tc) 4.5V, 10V 10.3mOhm @ 20A, 10V 2V @ 250µA 7.3 nC @ 10 V ±20V 570 pF @ 25 V - 3.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
RFP45N03L

RFP45N03L

N-CHANNEL POWER MOSFET

Harris Corporation

41,855 -
RFQ
RFP45N03L

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
HUF75344S3ST

HUF75344S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor

41,324 -
RFQ
HUF75344S3ST

Datenblatt

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
HUF76419S3ST

HUF76419S3ST

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor

31,359 -
RFQ
HUF76419S3ST

Datenblatt

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FW245-TL-E

FW245-TL-E

N CHANNEL SILICON MOS FET DC / D

Sanyo

26,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD4N60T4

NTD4N60T4

N-CHANNEL POWER MOSFET

Motorola

25,000 -
RFQ
NTD4N60T4

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.4Ohm @ 2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 760 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
2SJ664-E-SY

2SJ664-E-SY

MOSFET P-CH

Sanyo

20,397 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF9532

IRF9532

P-CHANNEL POWER MOSFET

Harris Corporation

19,101 -
RFQ
IRF9532

Datenblatt

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
FDS6688AS

FDS6688AS

MOSFET N-CH 30V 14.5A 8SOIC

Fairchild Semiconductor

11,680 -
RFQ
FDS6688AS

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 250µA 63 nC @ 10 V ±20V 2510 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FQI19N20TU

FQI19N20TU

MOSFET N-CH 200V 19.4A I2PAK

Fairchild Semiconductor

11,380 -
RFQ
FQI19N20TU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
FDD6676S

FDD6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

10,684 -
RFQ
FDD6676S

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Ta) 4.5V, 10V 6mOhm @ 16A, 10V 3V @ 1mA 58 nC @ 5 V ±16V 4770 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQU2N60TU

FQU2N60TU

MOSFET N-CH 600V 2A IPAK

Fairchild Semiconductor

10,164 -
RFQ
FQU2N60TU

Datenblatt

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.7Ohm @ 1A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NVMFS5C468NLT3G

NVMFS5C468NLT3G

MOSFET N-CH 40V 5DFN

onsemi

7,348 -
RFQ
NVMFS5C468NLT3G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 37A (Tc) 4.5V, 10V 10.3mOhm @ 20A, 10V 2V @ 250µA 7.3 nC @ 10 V ±20V 570 pF @ 25 V - 3.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
RJK03A4DPA-00#J53

RJK03A4DPA-00#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics Corporation

9,000 -
RFQ
RJK03A4DPA-00#J53

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IPA50R520CPXKSA1

IPA50R520CPXKSA1

MOSFET N-CH 500V 7.1A TO220-FP

Infineon Technologies

3,989 -
RFQ
IPA50R520CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
NTD6N40

NTD6N40

N-CHANNEL POWER MOSFET

onsemi

7,699 -
RFQ
NTD6N40

Datenblatt

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPP50R520CPXKSA1

IPP50R520CPXKSA1

MOSFET N-CH 500V 7.1A TO220-3

Infineon Technologies

3,901 -
RFQ
IPP50R520CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
STP3N50E

STP3N50E

NFET T0220 SPCL 500V

onsemi

7,200 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
DMP2033UCB9-7

DMP2033UCB9-7

MOSFET P-CH 20V 4.2A U-WLB1515-9

Diodes Incorporated

5,716 -
RFQ
DMP2033UCB9-7

Datenblatt

- 9-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 33mOhm @ 2A, 4.5V 1.1V @ 250µA 7 nC @ 4.5 V -6V 500 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1515-9
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