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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    BSC886N03LSGATMA1

    BSC886N03LSGATMA1

    MOSFET N-CH 30V 13A/65A TDSON

    Infineon Technologies

    		 7,066 -
    RFQ
    		BSC886N03LSGATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 65A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 26 nC @ 10 V ±20V 2100 pF @ 15 V - 2.5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
    FQPF6N60C

    FQPF6N60C

    MOSFET N-CH 600V 5.5A TO220F

    Fairchild Semiconductor

    		 5,632 -
    RFQ
    		FQPF6N60C

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    EFC4615R-TR

    EFC4615R-TR

    MOSFET N-CH 24V 6A EFCP

    onsemi

    		 5,000 -
    RFQ
    		EFC4615R-TR

    Datenblatt

         		- 4-XFBGA, FCBGA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 6A (Ta) 2.5V, 4.5V 31mOhm @ 3A, 4.5V 1.3V @ 1mA 8.8 nC @ 4.5 V ±12V - - 1.6W (Ta) 150°C (TJ) - - Surface Mount EFCP1515-4CC-037
    G28N03D3

    G28N03D3

    N30V,RD(MAX)<12M@10V,RD(MAX)<18M

    Goford Semiconductor

    		 5,000 -
    RFQ
    		G28N03D3

    Datenblatt

         		TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 12mOhm @ 16A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 896 pF @ 15 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    G170P03D3

    G170P03D3

    P-30V, -20A,RD<18M@-10V,VTH-1V~-

    Goford Semiconductor

    		 5,000 -
    RFQ
    		G170P03D3

    Datenblatt

         		TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 5A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1805 pF @ 15 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
    ISZ0901NLSATMA1

    ISZ0901NLSATMA1

    25V, N-CH MOSFET, LOGIC LEVEL, P

    Infineon Technologies

    		 8,301 -
    RFQ
    		ISZ0901NLSATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 8.1mOhm @ 20A, 10V 2V @ 250µA 9.1 nC @ 10 V ±20V 670 pF @ 12 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-25
    NVD5890NT4G

    NVD5890NT4G

    MOSFET N-CH 40V 24A/123A DPAK

    onsemi

    		 2,308 -
    RFQ
    		NVD5890NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 123A (Tc) 10V 3.7mOhm @ 50A, 10V 3.5V @ 250µA 100 nC @ 10 V ±20V 4760 pF @ 25 V - 4W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    2N60G

    2N60G

    MOSFET N-CH 600V 2A SOT223

    UMW

    		 2,479 -
    RFQ
    		2N60G

    Datenblatt

         		* TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 4V @ 250µA - ±30V - - 44W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount SOT-223-4
    RF1S23N06LE

    RF1S23N06LE

    23A, 60V, 0.065OHM, N-CHANNEL,

    Harris Corporation

    		 2,400 -
    RFQ
    		RF1S23N06LE

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 5V 65mOhm @ 23A, 5V 2V @ 250µA 48 nC @ 10 V ±10V 850 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
    G450P04K

    G450P04K

    MOSFET, P-CH,-40V,-11A,RD(MAX)<4

    Goford Semiconductor

    		 2,400 -
    RFQ
    		G450P04K

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Tc) 4.5V, 10V 40mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 983 pF @ 20 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    AOD3T40P

    AOD3T40P

    MOSFET N-CH 400V 2A TO252

    Alpha & Omega Semiconductor Inc.

    		 1,995 -
    RFQ
    		AOD3T40P

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.3Ohm @ 1A, 10V 5V @ 250µA 6 nC @ 10 V ±30V 139 pF @ 100 V - 35W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    IRFW610BTMFP001

    IRFW610BTMFP001

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,600 -
    RFQ
    		IRFW610BTMFP001

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 3.13W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    FQPF3N80CYDTU

    FQPF3N80CYDTU

    MOSFET N-CH 800V 3A TO220F-3

    Fairchild Semiconductor

    		 1,570 -
    RFQ
    		FQPF3N80CYDTU

    Datenblatt

         		QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±30V 705 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
    HUF76429D3

    HUF76429D3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,441 -
    RFQ
    		HUF76429D3

    Datenblatt

         		UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    FDS6688S

    FDS6688S

    MOSFET N-CH 30V 16A 8SOIC

    Fairchild Semiconductor

    		 199,516 -
    RFQ
    		FDS6688S

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6mOhm @ 16A, 10V 3V @ 1mA 78 nC @ 10 V ±20V 3290 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    UPA2521T1H-T1-AT

    UPA2521T1H-T1-AT

    MOSFET N-CH 30V 8A 8VSOF

    Renesas Electronics Corporation

    		 147,000 -
    RFQ
    		UPA2521T1H-T1-AT

    Datenblatt

         		- 8-SMD, Flat Lead Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) - 16.5mOhm @ 8A, 10V 2.5V @ 1mA 7.6 nC @ 5 V - 780 pF @ 15 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
    BSP149L6906HTSA1

    BSP149L6906HTSA1

    MOSFET N-CH 200V 660MA SOT223-4

    Infineon Technologies

    		 8,634 -
    RFQ
    		BSP149L6906HTSA1

    Datenblatt

         		SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 200 V 660mA (Ta) 0V, 10V 1.8Ohm @ 660mA, 10V 1V @ 400µA 14 nC @ 5 V ±20V 430 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
    FDU8896

    FDU8896

    MOSFET N-CH 30V 17A/94A IPAK

    Fairchild Semiconductor

    		 113,351 -
    RFQ
    		FDU8896

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 94A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    UPA2521T1H-T2-AT

    UPA2521T1H-T2-AT

    MOSFET N-CH 30V 8A 8VSOF

    Renesas Electronics Corporation

    		 84,000 -
    RFQ
    		UPA2521T1H-T2-AT

    Datenblatt

         		- 8-SMD, Flat Lead Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) - 16.5mOhm @ 8A, 10V 2.5V @ 1mA 7.6 nC @ 5 V - 780 pF @ 15 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-VSOF
    FQP5N60C

    FQP5N60C

    POWER FIELD-EFFECT TRANSISTOR, 4

    Fairchild Semiconductor

    		 74,533 -
    RFQ
    		FQP5N60C

    Datenblatt

         		QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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