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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STP150NF04

    STP150NF04

    MOSFET N-CH 40V 80A TO220AB

    STMicroelectronics

    		 431 -
    RFQ
    		STP150NF04 Datenblatt STripFET™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    R6011END3TL1

    R6011END3TL1

    MOSFET N-CH 600V 11A TO252

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6011END3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) - - Surface Mount TO-252
    RD3P08BBDTL

    RD3P08BBDTL

    MOSFET N-CH 100V 80A TO252

    Rohm Semiconductor

    		 9,410 -
    RFQ
    		RD3P08BBDTL Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 11.6mOhm @ 80A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 1940 pF @ 50 V - 119W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IAUT165N08S5N029ATMA2

    IAUT165N08S5N029ATMA2

    MOSFET N-CH 80V 165A 8HSOF

    Infineon Technologies

    		 1,980 -
    RFQ
    		IAUT165N08S5N029ATMA2 Datenblatt OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 165A (Tc) 6V, 10V 2.9mOhm @ 80A, 10V 3.8V @ 108µA 90 nC @ 10 V ±20V 6370 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
    STF10LN80K5

    STF10LN80K5

    MOSFET N-CH 800V 8A TO220FP

    STMicroelectronics

    		 799 -
    RFQ
    		STF10LN80K5 Datenblatt MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 630mOhm @ 4A, 10V 5V @ 100µA 15 nC @ 10 V ±30V 427 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IRFBC30APBF

    IRFBC30APBF

    MOSFET N-CH 600V 3.6A TO220AB

    Vishay Siliconix

    		 906 -
    RFQ
    		IRFBC30APBF Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    TSM019NH04CR RLG

    TSM019NH04CR RLG

    40V, 100A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TSM019NH04CR RLG Datenblatt PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 100A (Tc) 7V, 10V 1.9mOhm @ 50A, 10V 3.6V @ 250µA 89 nC @ 10 V ±20V 6029 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    TSM019NH04LCR RLG

    TSM019NH04LCR RLG

    40V, 100A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 4,965 -
    RFQ
    		TSM019NH04LCR RLG Datenblatt PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2.2V @ 250µA 104 nC @ 10 V ±16V 6282 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    STD5N95K3

    STD5N95K3

    MOSFET N-CH 950V 4A DPAK

    STMicroelectronics

    		 2,485 -
    RFQ
    		STD5N95K3 Datenblatt SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 3.5Ohm @ 2A, 10V 5V @ 100µA 19 nC @ 10 V ±30V 460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SIHP22N60AE-BE3

    SIHP22N60AE-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 1,944 -
    RFQ
    		SIHP22N60AE-BE3 Datenblatt E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPF039N08NF2SATMA1

    IPF039N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7

    Infineon Technologies

    		 682 -
    RFQ
    		IPF039N08NF2SATMA1 Datenblatt StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 126A (Tc) 6V, 10V 3.9mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
    IPB80N04S2H4ATMA2

    IPB80N04S2H4ATMA2

    MOSFET N-CHANNEL_30/40V

    Infineon Technologies

    		 602 -
    RFQ
    		IPB80N04S2H4ATMA2 Datenblatt CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    STF12N65M5

    STF12N65M5

    MOSFET N-CH 650V 8.5A TO220FP

    STMicroelectronics

    		 128 -
    RFQ
    		STF12N65M5 Datenblatt MDmesh™ V TO-220-5 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 430mOhm @ 4.3A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 900 pF @ 100 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRF640STRRPBF

    IRF640STRRPBF

    MOSFET N-CH 200V 18A TO263

    Vishay Siliconix

    		 1,458 -
    RFQ
    		IRF640STRRPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6009ENXC7G

    R6009ENXC7G

    600V 9A TO-220FM, LOW-NOISE POWE

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6009ENXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IRFZ48PBF

    IRFZ48PBF

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 978 -
    RFQ
    		IRFZ48PBF Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFZ48RPBF

    IRFZ48RPBF

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 948 -
    RFQ
    		IRFZ48RPBF Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRF740ALPBF

    IRF740ALPBF

    MOSFET N-CH 400V 10A I2PAK

    Vishay Siliconix

    		 615 -
    RFQ
    		IRF740ALPBF Datenblatt - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    IRF740ASTRLPBF

    IRF740ASTRLPBF

    MOSFET N-CH 400V 10A D2PAK

    Vishay Siliconix

    		 550 -
    RFQ
    		IRF740ASTRLPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6009KNXC7G

    R6009KNXC7G

    600V 9A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 547 -
    RFQ
    		R6009KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
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