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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP65R155CFD7XKSA1

    IPP65R155CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 157 -
    RFQ
    		IPP65R155CFD7XKSA1 Datenblatt CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IRFS7534TRLPBF

    IRFS7534TRLPBF

    MOSFET N CH 60V 195A D2PAK

    Infineon Technologies

    		 2,332 -
    RFQ
    		IRFS7534TRLPBF Datenblatt HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
    STH145N8F7-2AG

    STH145N8F7-2AG

    MOSFET N-CH 80V 90A H2PAK-2

    STMicroelectronics

    		 1,520 -
    RFQ
    		STH145N8F7-2AG Datenblatt STripFET™ F7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 4mOhm @ 45A, 10V 4.5V @ 250µA 96 nC @ 10 V ±20V 6340 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-2
    STL320N4LF8

    STL320N4LF8

    AUTOMOTIVE-GRADE N-CHANNEL 40 V

    STMicroelectronics

    		 5,965 -
    RFQ
    		STL320N4LF8 Datenblatt - 8-PowerDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V - - - - - - - - - - - - Surface Mount PowerFlat™ (5x6)
    CSD16401Q5T

    CSD16401Q5T

    MOSFET N-CH 25V 100A 8VSON

    Texas Instruments

    		 520 -
    RFQ
    		CSD16401Q5T Datenblatt NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Ta) 4.5V, 10V 1.6mOhm @ 40A, 10V 1.9V @ 250µA 29 nC @ 4.5 V +16V, -12V 4100 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    SIHG15N80AEF-GE3

    SIHG15N80AEF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 438 -
    RFQ
    		SIHG15N80AEF-GE3 Datenblatt EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 6.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1128 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    RCX450N20

    RCX450N20

    MOSFET N-CH 200V 45A TO220FM

    Rohm Semiconductor

    		 425 -
    RFQ
    		RCX450N20 Datenblatt - TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPW60R180P7XKSA1

    IPW60R180P7XKSA1

    MOSFET N-CH 650V 18A TO247-3

    Infineon Technologies

    		 178 -
    RFQ
    		IPW60R180P7XKSA1 Datenblatt CoolMOS™ P7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    AUIRF7675M2TR

    AUIRF7675M2TR

    MOSFET N-CH 150V 4.4A DIRECTFET

    Infineon Technologies

    		 9,508 -
    RFQ
    		AUIRF7675M2TR Datenblatt HEXFET® DirectFET™ Isometric M2 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 18A (Tc) 10V 56mOhm @ 11A, 10V 5V @ 100µA 32 nC @ 10 V ±20V 1360 pF @ 25 V - 2.7W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric M2
    AOB160A60L

    AOB160A60L

    MOSFET N-CH 600V 24A TO263

    Alpha & Omega Semiconductor Inc.

    		 717 -
    RFQ
    		AOB160A60L Datenblatt aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPP60R145CFD7XKSA1

    IPP60R145CFD7XKSA1

    MOSFET N CH

    Infineon Technologies

    		 479 -
    RFQ
    		IPP60R145CFD7XKSA1 Datenblatt CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 145mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    BUK763R1-60E,118

    BUK763R1-60E,118

    MOSFET N-CH 60V 120A D2PAK

    Nexperia USA Inc.

    		 8,530 -
    RFQ
    		BUK763R1-60E,118 Datenblatt TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 114 nC @ 10 V ±20V 8920 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IPP60R160P6XKSA1

    IPP60R160P6XKSA1

    MOSFET N-CH 600V 23.8A TO220-3

    Infineon Technologies

    		 338 -
    RFQ
    		IPP60R160P6XKSA1 Datenblatt CoolMOS™ P6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPDD60R145CFD7XTMA1

    IPDD60R145CFD7XTMA1

    MOSFET N-CH 600V 24A HDSOP-10

    Infineon Technologies

    		 3,296 -
    RFQ
    		IPDD60R145CFD7XTMA1 Datenblatt CoolMOS™ CFD7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) - 145mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
    SIHF15N60E-GE3

    SIHF15N60E-GE3

    MOSFET N-CH 600V 15A TO220

    Vishay Siliconix

    		 779 -
    RFQ
    		SIHF15N60E-GE3 Datenblatt E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    AOB66613L

    AOB66613L

    MOSFET N-CH 60V 44.5A/120A TO263

    Alpha & Omega Semiconductor Inc.

    		 2,494 -
    RFQ
    		AOB66613L Datenblatt AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 44.5A (Ta), 120A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 8.3W (Ta), 260W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R8002ANJGTL

    R8002ANJGTL

    NCH 800V 2A POWER MOSFET : R8002

    Rohm Semiconductor

    		 925 -
    RFQ
    		R8002ANJGTL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) - - Surface Mount TO-263S
    SIHB15N60E-GE3

    SIHB15N60E-GE3

    MOSFET N-CH 600V 15A D2PAK

    Vishay Siliconix

    		 1,347 -
    RFQ
    		SIHB15N60E-GE3 Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STP33N60DM6

    STP33N60DM6

    MOSFET N-CH 600V 25A TO220

    STMicroelectronics

    		 976 -
    RFQ
    		STP33N60DM6 Datenblatt MDmesh™ M6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 128mOhm @ 12.5A, 10V 4.75V @ 250µA 35 nC @ 10 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDP027N08B-F102

    FDP027N08B-F102

    MOSFET N-CH 80V 120A TO220-3

    onsemi

    		 575 -
    RFQ
    		FDP027N08B-F102 Datenblatt PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.7mOhm @ 100A, 10V 4.5V @ 250µA 178 nC @ 10 V ±20V 13530 pF @ 40 V - 246W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
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