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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHG21N80AEF-GE3

    SIHG21N80AEF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 450 -
    RFQ
    		SIHG21N80AEF-GE3 Datenblatt EF TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 16.3A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    FCPF11N60T

    FCPF11N60T

    MOSFET N-CH 600V 11A TO220F

    onsemi

    		 911 -
    RFQ
    		FCPF11N60T Datenblatt SuperFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPA030N10NF2SXKSA1

    IPA030N10NF2SXKSA1

    TRENCH >=100V PG-TO220-3

    Infineon Technologies

    		 8,762 -
    RFQ
    		IPA030N10NF2SXKSA1 Datenblatt StrongIRFET™ 2 TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
    STW24N60M6

    STW24N60M6

    MOSFET N-CH 600V TO247

    STMicroelectronics

    		 593 -
    RFQ
    		STW24N60M6 Datenblatt MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tj) - - - - - - - - - - - Through Hole TO-247-3
    PSMN1R1-40BS,118

    PSMN1R1-40BS,118

    MOSFET N-CH 40V 120A D2PAK

    Nexperia USA Inc.

    		 3,818 -
    RFQ
    		PSMN1R1-40BS,118 Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.3mOhm @ 25A, 10V 4V @ 1mA 136 nC @ 10 V ±20V 9710 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    NTPF360N80S3Z

    NTPF360N80S3Z

    MOSFET N-CH 800V 13A TO220FP

    onsemi

    		 1,963 -
    RFQ
    		NTPF360N80S3Z Datenblatt SuperFET® III TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 6.5A, 10V 3.8V @ 300µA 25.3 nC @ 10 V ±20V 1143 pF @ 400 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    NTMFS0D8N02P1ET1G

    NTMFS0D8N02P1ET1G

    MOSFET N-CH 25V 55A/365A 5DFN

    onsemi

    		 366 -
    RFQ
    		NTMFS0D8N02P1ET1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 55A (Ta), 365A (Tc) 4.5V, 10V 0.68mOhm @ 46A, 10V 2V @ 2mA 52 nC @ 4.5 V +16V, -12V 8600 pF @ 13 V - 3.2W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    FCMT299N60

    FCMT299N60

    MOSFET N-CH 600V 12A POWER88

    onsemi

    		 2,390 -
    RFQ
    		FCMT299N60 Datenblatt SuperFET® II 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 299mOhm @ 6A, 10V 3.5V @ 250µA 51 nC @ 10 V ±20V 1948 pF @ 380 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power88
    STL13NM60N

    STL13NM60N

    MOSFET N-CH 600V 10A PWRFLAT HV

    STMicroelectronics

    		 2,811 -
    RFQ
    		STL13NM60N Datenblatt MDmesh™ II 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 385mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 790 pF @ 50 V - 3W (Ta), 90W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    FCPF260N60E

    FCPF260N60E

    MOSFET N CH 600V 15A TO-220F

    onsemi

    		 1,867 -
    RFQ
    		FCPF260N60E Datenblatt SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tj) 10V 260mOhm @ 7.5A, 10V 3.5V @ 250µA 62 nC @ 10 V ±20V 2500 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IXTP20N65X2

    IXTP20N65X2

    MOSFET N-CH 650V 20A TO220AB

    Littelfuse Inc.

    		 277 -
    RFQ
    		IXTP20N65X2 Datenblatt Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    SQM120N04-1M7L_GE3

    SQM120N04-1M7L_GE3

    MOSFET N-CH 40V 120A TO263

    Vishay Siliconix

    		 2,178 -
    RFQ
    		SQM120N04-1M7L_GE3 Datenblatt TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V 2.5V @ 250µA 285 nC @ 10 V ±20V 14606 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
    NTMFS7D8N10GTWG

    NTMFS7D8N10GTWG

    N-CHANNEL SHIELDED GATE POWERTRE

    onsemi

    		 2,937 -
    RFQ
    		NTMFS7D8N10GTWG Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 110A (Tc) 10V 7.6mOhm @ 48A, 10V 4V @ 254µA 92 nC @ 10 V ±20V 6180 pF @ 50 V - 3W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IPT60R125CFD7XTMA1

    IPT60R125CFD7XTMA1

    MOSFET N-CH 600V 21A 8HSOF

    Infineon Technologies

    		 1,989 -
    RFQ
    		IPT60R125CFD7XTMA1 Datenblatt CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
    R6012JNJGTL

    R6012JNJGTL

    MOSFET N-CH 600V 12A LPTS

    Rohm Semiconductor

    		 1,296 -
    RFQ
    		R6012JNJGTL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 15V 390mOhm @ 6A, 15V 7V @ 2.5mA 28 nC @ 15 V ±30V 900 pF @ 100 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    FCPF150N65F

    FCPF150N65F

    MOSFET N-CH 650V 14.9A TO220F

    onsemi

    		 990 -
    RFQ
    		FCPF150N65F Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 14.9A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    SIHA22N60EF-GE3

    SIHA22N60EF-GE3

    MOSFET N-CH 600V 19A TO220

    Vishay Siliconix

    		 929 -
    RFQ
    		SIHA22N60EF-GE3 Datenblatt EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    SIHA24N80AE-GE3

    SIHA24N80AE-GE3

    MOSFET N-CH 800V 9A TO220

    Vishay Siliconix

    		 752 -
    RFQ
    		SIHA24N80AE-GE3 Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    R8006KND3TL1

    R8006KND3TL1

    HIGH-SPEED SWITCHING NCH 800V 6A

    Rohm Semiconductor

    		 1,386 -
    RFQ
    		R8006KND3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 83W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IPF023N08NF2SATMA1

    IPF023N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7

    Infineon Technologies

    		 800 -
    RFQ
    		IPF023N08NF2SATMA1 Datenblatt StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 209A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 139µA 133 nC @ 10 V ±20V 6200 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
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