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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP60R120C7XKSA1

    IPP60R120C7XKSA1

    MOSFET N-CH 600V 19A TO220-3

    Infineon Technologies

    		 622 -
    RFQ
    		IPP60R120C7XKSA1 Datenblatt CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STL26N60DM6

    STL26N60DM6

    MOSFET N-CH 600V 15A PWRFLAT HV

    STMicroelectronics

    		 2,997 -
    RFQ
    		STL26N60DM6 Datenblatt MDmesh™ DM6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 215mOhm @ 7.5A, 10V 4.75V @ 250µA 24 nC @ 10 V ±25V 940 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    IPB024N08N5ATMA1

    IPB024N08N5ATMA1

    MOSFET N-CH 80V 120A D2PAK

    Infineon Technologies

    		 990 -
    RFQ
    		IPB024N08N5ATMA1 Datenblatt OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 154µA 123 nC @ 10 V ±20V 8970 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPW65R155CFD7XKSA1

    IPW65R155CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 240 -
    RFQ
    		IPW65R155CFD7XKSA1 Datenblatt CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    STF33N65M2

    STF33N65M2

    MOSFET N-CH 650V 24A TO220FP

    STMicroelectronics

    		 180 -
    RFQ
    		STF33N65M2 Datenblatt MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 140mOhm @ 12A, 10V 4V @ 250µA 41.5 nC @ 10 V ±25V 1790 pF @ 100 V - 34W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    STW10N95K5

    STW10N95K5

    MOSFET N-CH 950V 8A TO247

    STMicroelectronics

    		 461 -
    RFQ
    		STW10N95K5 Datenblatt SuperMESH5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 630 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    R6055VNXC7G

    R6055VNXC7G

    600V 23A TO-220FM, PRESTOMOS WIT

    Rohm Semiconductor

    		 1,013 -
    RFQ
    		R6055VNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V, 15V 71mOhm @ 16A, 15V 6.5V @ 1.5mA 80 nC @ 10 V ±30V 3700 pF @ 100 V - 100W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6035KNZC17

    R6035KNZC17

    MOSFET N-CH 600V 35A TO3PF

    Rohm Semiconductor

    		 277 -
    RFQ
    		R6035KNZC17 Datenblatt - TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 5V @ 1mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 102W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    R6035ENZC17

    R6035ENZC17

    MOSFET N-CH 600V 35A TO3PF

    Rohm Semiconductor

    		 266 -
    RFQ
    		R6035ENZC17 Datenblatt - TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 4V @ 1mA 110 nC @ 10 V ±20V 2720 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    R6024ENJTL

    R6024ENJTL

    MOSFET N-CH 600V 24A LPTS

    Rohm Semiconductor

    		 821 -
    RFQ
    		R6024ENJTL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Surface Mount LPTS
    IXFP36N20X3M

    IXFP36N20X3M

    MOSFET N-CH 200V 36A TO220

    IXYS

    		 292 -
    RFQ
    		IXFP36N20X3M Datenblatt HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    NVMJST1D2N04CTXG

    NVMJST1D2N04CTXG

    TRENCH 6 40V LFPAK 5X7

    onsemi

    		 2,900 -
    RFQ
    		NVMJST1D2N04CTXG Datenblatt - 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 451A (Tc) 10V 1.25mOhm @ 50A, 10V 4V @ 200µA 82 nC @ 10 V ±20V 5340 pF @ 20 V - 454W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
    STP12NK80Z

    STP12NK80Z

    MOSFET N-CH 800V 10.5A TO220AB

    STMicroelectronics

    		 2,626 -
    RFQ
    		STP12NK80Z Datenblatt SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 10.5A (Tc) 10V 750mOhm @ 5.25A, 10V 4.5V @ 100µA 87 nC @ 10 V ±30V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    NVB190N65S3F

    NVB190N65S3F

    MOSFET N-CH 650V 20A D2PAK-3

    onsemi

    		 622 -
    RFQ
    		NVB190N65S3F Datenblatt SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1605 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
    SIHB105N60EF-GE3

    SIHB105N60EF-GE3

    MOSFET N-CH 600V 29A D2PAK

    Vishay Siliconix

    		 5,591 -
    RFQ
    		SIHB105N60EF-GE3 Datenblatt EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6015ENXC7G

    R6015ENXC7G

    600V 15A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6015ENXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6515ENXC7G

    R6515ENXC7G

    650V 15A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6515ENXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 4V @ 430µA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IPB030N08N3GATMA1

    IPB030N08N3GATMA1

    MOSFET N-CH 80V 160A TO263-7

    Infineon Technologies

    		 2,493 -
    RFQ
    		IPB030N08N3GATMA1 Datenblatt OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
    IXTP14N60P

    IXTP14N60P

    MOSFET N-CH 600V 14A TO220AB

    Littelfuse Inc.

    		 177 -
    RFQ
    		IXTP14N60P Datenblatt Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IAUS240N08S5N019ATMA1

    IAUS240N08S5N019ATMA1

    MOSFET N-CH 80V 240A HSOG-8

    Infineon Technologies

    		 2,481 -
    RFQ
    		IAUS240N08S5N019ATMA1 Datenblatt OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 160µA 130 nC @ 10 V ±20V 9264 pF @ 40 V - 230W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-8-1
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