TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche ZXSC410E6TA AP22653W6-7 LM5164DDAR D8V0L1B2LP-7B AS431ANTR-G1 GRM1555C1H102JA01D GRM155R71E103KA01D LM5066UPMHX/NOPB GRM21BR61C106KE15K TAJE106K050RNJ
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AOW125A60

    AOW125A60

    MOSFET N-CH 600V 28A TO262

    Alpha & Omega Semiconductor Inc.

    		 7,987 -
    RFQ
    		AOW125A60

    Datenblatt

         		aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 312.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
    IPB180N06S4H1ATMA2

    IPB180N06S4H1ATMA2

    MOSFET N-CH 60V 180A TO263-7

    Infineon Technologies

    		 7,667 -
    RFQ
    		IPB180N06S4H1ATMA2

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    TK170V65Z,LQ

    TK170V65Z,LQ

    MOSFET N-CH 650V 18A 5DFN

    Toshiba Semiconductor and Storage

    		 4,950 -
    RFQ
    		TK170V65Z,LQ

    Datenblatt

         		DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 170mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
    SUM70030M-GE3

    SUM70030M-GE3

    MOSFET N-CH 100V 150A TO263-7

    Vishay Siliconix

    		 1,070 -
    RFQ
    		SUM70030M-GE3

    Datenblatt

         		TrenchFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) - 3.5mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IPP60R160C6XKSA1

    IPP60R160C6XKSA1

    MOSFET N-CH 600V 23.8A TO220-3

    Infineon Technologies

    		 488 -
    RFQ
    		IPP60R160C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    NP109N055PUK-E1-AY

    NP109N055PUK-E1-AY

    MOSFET N-CH 55V 110A TO263

    Renesas Electronics Corporation

    		 1,560 -
    RFQ
    		NP109N055PUK-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 2.2mOhm @ 55A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 11250 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) - - Surface Mount TO-263
    RX3G18BGNC16

    RX3G18BGNC16

    NCH 40V 180A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 2,896 -
    RFQ
    		RX3G18BGNC16

    Datenblatt

         		- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 1.64mOhm @ 90A, 10V 2.5V @ 1mA 168 nC @ 10 V ±20V 12000 pF @ 20 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    R6018VNXC7G

    R6018VNXC7G

    600V 10A TO-220FM, PRESTOMOS WIT

    Rohm Semiconductor

    		 1,050 -
    RFQ
    		R6018VNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V, 15V 204mOhm @ 4A, 15V 6.5V @ 600µA 27 nC @ 10 V ±30V 1250 pF @ 100 V - 61W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6009ENX

    R6009ENX

    MOSFET N-CH 600V 9A TO220FM

    Rohm Semiconductor

    		 188 -
    RFQ
    		R6009ENX

    Datenblatt

         		- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RS6G120BGTB1

    RS6G120BGTB1

    NCH 40V 210A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,094 -
    RFQ
    		RS6G120BGTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.34mOhm @ 90A, 10V 2.5V @ 1mA 67 nC @ 10 V ±20V 4240 pF @ 20 V - 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    IPF009N04NF2SATMA1

    IPF009N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 650 -
    RFQ
    		IPF009N04NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 302A (Tc) 6V, 10V 0.9mOhm @ 100A, 10V 3.4V @ 249µA 315 nC @ 10 V ±20V 15000 pF @ 20 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
    IRFBE30STRLPBF

    IRFBE30STRLPBF

    MOSFET N-CH 800V 4.1A D2PAK

    Vishay Siliconix

    		 700 -
    RFQ

    -

    		 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHG180N60E-GE3

    SIHG180N60E-GE3

    MOSFET N-CH 600V 19A TO247AC

    Vishay Siliconix

    		 329 -
    RFQ
    		SIHG180N60E-GE3

    Datenblatt

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IXFP7N80P

    IXFP7N80P

    MOSFET N-CH 800V 7A TO220AB

    Littelfuse Inc.

    		 299 -
    RFQ
    		IXFP7N80P

    Datenblatt

         		HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STP80N240K6

    STP80N240K6

    N-CHANNEL 800 V, 197 MOHM TYP.,

    STMicroelectronics

    		 973 -
    RFQ
    		STP80N240K6

    Datenblatt

         		MDmesh™ K6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 220mOhm @ 7A, 10V 4V @ 100µA 25.9 nC @ 10 V ±30V 1350 pF @ 100 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IRFS9N60ATRLPBF

    IRFS9N60ATRLPBF

    MOSFET N-CH 600V 9.2A D2PAK

    Vishay Siliconix

    		 950 -
    RFQ
    		IRFS9N60ATRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPP60R125CFD7XKSA1

    IPP60R125CFD7XKSA1

    MOSFET N-CH 600V 18A TO220-3

    Infineon Technologies

    		 287 -
    RFQ
    		IPP60R125CFD7XKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IXFP14N85X

    IXFP14N85X

    MOSFET N-CH 850V 14A TO220AB

    Littelfuse Inc.

    		 395 -
    RFQ
    		IXFP14N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
    STFU13N80K5

    STFU13N80K5

    MOSFET N-CH 800V 12A TO220FP

    STMicroelectronics

    		 899 -
    RFQ
    		STFU13N80K5

    Datenblatt

         		MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    STP25N80K5

    STP25N80K5

    MOSFET N-CH 800V 19.5A TO220

    STMicroelectronics

    		 1,000 -
    RFQ
    		STP25N80K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    Total 36322 Record«Prev1... 180181182183184185186187...1817Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135