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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFS9N60ATRLPBF

    IRFS9N60ATRLPBF

    MOSFET N-CH 600V 9.2A D2PAK

    Vishay Siliconix

    		 950 -
    RFQ
    		IRFS9N60ATRLPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPP60R125CFD7XKSA1

    IPP60R125CFD7XKSA1

    MOSFET N-CH 600V 18A TO220-3

    Infineon Technologies

    		 287 -
    RFQ
    		IPP60R125CFD7XKSA1 Datenblatt OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IXFP14N85X

    IXFP14N85X

    MOSFET N-CH 850V 14A TO220AB

    Littelfuse Inc.

    		 395 -
    RFQ
    		IXFP14N85X Datenblatt HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
    STFU13N80K5

    STFU13N80K5

    MOSFET N-CH 800V 12A TO220FP

    STMicroelectronics

    		 899 -
    RFQ
    		STFU13N80K5 Datenblatt MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    STP25N80K5

    STP25N80K5

    MOSFET N-CH 800V 19.5A TO220

    STMicroelectronics

    		 1,000 -
    RFQ
    		STP25N80K5 Datenblatt SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19.5A (Tc) 10V 260mOhm @ 19.5A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    R6030JNZC17

    R6030JNZC17

    MOSFET N-CH 600V 30A TO3PF

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6030JNZC17 Datenblatt - TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 93W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    TK160F10N1,LXGQ

    TK160F10N1,LXGQ

    MOSFET N-CH 100V 160A TO220SM

    Toshiba Semiconductor and Storage

    		 4,477 -
    RFQ
    		TK160F10N1,LXGQ Datenblatt U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 160A (Ta) 10V 2.4mOhm @ 80A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 8510 pF @ 10 V - 375W (Tc) 175°C - - Surface Mount TO-220SM(W)
    BUK7S1R2-40HJ

    BUK7S1R2-40HJ

    MOSFET N-CH 40V 300A LFPAK88

    Nexperia USA Inc.

    		 4,578 -
    RFQ
    		BUK7S1R2-40HJ Datenblatt - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 1.2mOhm @ 25A, 10V 3.6V @ 1mA 112 nC @ 10 V +20V, -10V 8420 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK88 (SOT1235)
    TK22A65X,S5X

    TK22A65X,S5X

    X35 PB-F POWER MOSFET TRANSISTOR

    Toshiba Semiconductor and Storage

    		 183 -
    RFQ
    		TK22A65X,S5X Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 150mOhm @ 11A, 10V 3.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
    IPT022N10NF2SATMA1

    IPT022N10NF2SATMA1

    MOSFET

    Infineon Technologies

    		 1,800 -
    RFQ
    		IPT022N10NF2SATMA1 Datenblatt StrongIRFET™ 2 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 29A (Ta), 236A (Tc) 6V, 10V 2.25mOhm @ 150A, 10V 3.8V @ 169µA 155 nC @ 10 V ±20V 7300 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-10
    STH150N10F7-2

    STH150N10F7-2

    MOSFET N-CH 100V 110A H2PAK-2

    STMicroelectronics

    		 760 -
    RFQ
    		STH150N10F7-2 Datenblatt DeepGATE™, STripFET™ VII TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 3.9mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-2
    IXFP38N30X3M

    IXFP38N30X3M

    MOSFET N-CH 300V 38A TO220

    Littelfuse Inc.

    		 2,357 -
    RFQ
    		IXFP38N30X3M Datenblatt HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) - - - 35 nC @ 10 V ±20V 2440 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    R8011KNXC7G

    R8011KNXC7G

    HIGH-SPEED SWITCHING NCH 800V 11

    Rohm Semiconductor

    		 2,172 -
    RFQ
    		R8011KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Ta) 10V 450mOhm @ 5.5A, 10V 4.5V @ 5.5mA 37 nC @ 10 V ±20V 1200 pF @ 100 V - 65W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IXTP3N100P

    IXTP3N100P

    MOSFET N-CH 1000V 3A TO220AB

    Littelfuse Inc.

    		 263 -
    RFQ
    		IXTP3N100P Datenblatt Polar P3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXFP36N20X3

    IXFP36N20X3

    MOSFET N-CH 200V 36A TO220

    Littelfuse Inc.

    		 154 -
    RFQ
    		IXFP36N20X3 Datenblatt HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FCPF190N60

    FCPF190N60

    MOSFET N-CH 600V 20.2A TO220F

    onsemi

    		 635 -
    RFQ
    		FCPF190N60 Datenblatt SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRF644STRRPBF

    IRF644STRRPBF

    MOSFET N-CH 250V 14A D2PAK

    Vishay Siliconix

    		 605 -
    RFQ
    		IRF644STRRPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTPF250N65S3H

    NTPF250N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 496 -
    RFQ
    		NTPF250N65S3H Datenblatt SuperFET® III TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 13A (Tj) 10V 250mOhm @ 6.5A, 10V 4V @ 1.1mA 24 nC @ 10 V ±30V 1261 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IXFH34N50P3

    IXFH34N50P3

    MOSFET N-CH 500V 34A TO247AD

    IXYS

    		 292 -
    RFQ
    		IXFH34N50P3 Datenblatt HiPerFET™, Polar3™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 170mOhm @ 17A, 10V 5V @ 4mA 60 nC @ 10 V ±30V 3260 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
    R6018JNXC7G

    R6018JNXC7G

    MOSFET N-CH 600V 18A TO220FM

    Rohm Semiconductor

    		 2,795 -
    RFQ
    		R6018JNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 15V 286mOhm @ 9A, 15V 7V @ 4.2mA 42 nC @ 15 V ±30V 1300 pF @ 100 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
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