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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHG24N80AE-GE3

    SIHG24N80AE-GE3

    MOSFET N-CH 800V 21A TO247AC

    Vishay Siliconix

    		 460 -
    RFQ
    		SIHG24N80AE-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    R6020JNZ4C13

    R6020JNZ4C13

    MOSFET N-CH 600V 20A TO247G

    Rohm Semiconductor

    		 355 -
    RFQ
    		R6020JNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 252W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247G
    IXFP22N65X2M

    IXFP22N65X2M

    MOSFET N-CH 650V 22A TO220

    Littelfuse Inc.

    		 296 -
    RFQ
    		IXFP22N65X2M

    Datenblatt

         		HiPerFET™, Ultra X2 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 145mOhm @ 11A, 10V 5V @ 1.5mA 37 nC @ 10 V ±30V 2190 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    R8005ANJGTL

    R8005ANJGTL

    NCH 800V 5A POWER MOSFET : R8005

    Rohm Semiconductor

    		 1,984 -
    RFQ
    		R8005ANJGTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V 5V @ 1mA 20 nC @ 10 V ±30V 500 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Surface Mount TO-263S
    IXTA75N10P

    IXTA75N10P

    MOSFET N-CH 100V 75A TO263

    Littelfuse Inc.

    		 844 -
    RFQ
    		IXTA75N10P

    Datenblatt

         		Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
    NTP095N65S3H

    NTP095N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 785 -
    RFQ
    		NTP095N65S3H

    Datenblatt

         		SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXTA50N20P

    IXTA50N20P

    MOSFET N-CH 200V 50A TO263

    IXYS

    		 297 -
    RFQ
    		IXTA50N20P

    Datenblatt

         		Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
    IXTQ36N30P

    IXTQ36N30P

    MOSFET N-CH 300V 36A TO3P

    Littelfuse Inc.

    		 165 -
    RFQ
    		IXTQ36N30P

    Datenblatt

         		PolarHT™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
    STF15N95K5

    STF15N95K5

    MOSFET N-CH 950V 12A TO220FP

    STMicroelectronics

    		 991 -
    RFQ
    		STF15N95K5

    Datenblatt

         		SuperMESH5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 900 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    STP19NM50N

    STP19NM50N

    MOSFET N-CH 500V 14A TO220AB

    STMicroelectronics

    		 972 -
    RFQ
    		STP19NM50N

    Datenblatt

         		MDmesh™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
    IXFP4N85X

    IXFP4N85X

    MOSFET N-CH 850V 3.5A TO220AB

    Littelfuse Inc.

    		 300 -
    RFQ
    		IXFP4N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
    NVB150N65S3F

    NVB150N65S3F

    MOSFET N-CH 650V 24A D2PAK-3

    onsemi

    		 1,483 -
    RFQ
    		NVB150N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1999 pF @ 400 V - 192W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
    IPP60R105CFD7XKSA1

    IPP60R105CFD7XKSA1

    MOSFET N CH

    Infineon Technologies

    		 157 -
    RFQ
    		IPP60R105CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 105mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STF33N60DM6

    STF33N60DM6

    MOSFET N-CH 600V 25A TO220FP

    STMicroelectronics

    		 505 -
    RFQ
    		STF33N60DM6

    Datenblatt

         		MDmesh™ M6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 128mOhm @ 12.5A, 10V 4.75V @ 250µA 35 nC @ 10 V ±25V 1500 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IXFP18N65X2

    IXFP18N65X2

    MOSFET N-CH 650V 18A TO220AB

    Littelfuse Inc.

    		 298 -
    RFQ
    		IXFP18N65X2

    Datenblatt

         		HiPerFET™, Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FCP110N65F

    FCP110N65F

    MOSFET N-CH 650V 35A TO220-3

    onsemi

    		 793 -
    RFQ
    		FCP110N65F

    Datenblatt

         		FRFET®, SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    STL31N65M5

    STL31N65M5

    MOSFET N-CH 650V 15A PWRFLAT88

    STMicroelectronics

    		 2,862 -
    RFQ
    		STL31N65M5

    Datenblatt

         		MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Ta), 15A (Tc) 10V 162mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 2.8W (Ta), 125W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    AUIRFR4620TRL

    AUIRFR4620TRL

    MOSFET N-CH 200V 24A DPAK

    Infineon Technologies

    		 5,650 -
    RFQ
    		AUIRFR4620TRL

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    R6018JNJGTL

    R6018JNJGTL

    MOSFET N-CH 600V 18A LPTS

    Rohm Semiconductor

    		 502 -
    RFQ
    		R6018JNJGTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 15V 286mOhm @ 9A, 15V 7V @ 4.2mA 42 nC @ 15 V ±30V 1300 pF @ 100 V - 220W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    IPL65R130C7AUMA1

    IPL65R130C7AUMA1

    MOSFET N-CH 650V 15A 4VSON

    Infineon Technologies

    		 3,088 -
    RFQ
    		IPL65R130C7AUMA1

    Datenblatt

         		CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 130mOhm @ 4.4A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 102W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
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