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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SPP24N60C3XKSA1

    SPP24N60C3XKSA1

    MOSFET N-CH 650V 24.3A TO220-3

    Infineon Technologies

    		 126 -
    RFQ
    		SPP24N60C3XKSA1 Datenblatt CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24.3A (Tc) 10V 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 135 nC @ 10 V ±20V 3000 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPT063N15N5ATMA1

    IPT063N15N5ATMA1

    TRENCH >=100V PG-HSOF-8

    Infineon Technologies

    		 3,916 -
    RFQ
    		IPT063N15N5ATMA1 Datenblatt OptiMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 153µA 59 nC @ 10 V ±20V 4550 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8
    STP42N60M2-EP

    STP42N60M2-EP

    MOSFET N-CH 600V 34A TO220

    STMicroelectronics

    		 1,000 -
    RFQ
    		STP42N60M2-EP Datenblatt MDmesh™ M2-EP TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-220
    STP20NM50FD

    STP20NM50FD

    MOSFET N-CH 500V 20A TO220AB

    STMicroelectronics

    		 986 -
    RFQ
    		STP20NM50FD Datenblatt FDmesh™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1380 pF @ 25 V - 192W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-220
    RJ1G12BGNTLL

    RJ1G12BGNTLL

    MOSFET N-CH 40V 120A LPTL

    Rohm Semiconductor

    		 664 -
    RFQ
    		RJ1G12BGNTLL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.86mOhm @ 50A, 10V 2.5V @ 2mA 165 nC @ 10 V ±20V 12500 pF @ 20 V - 178W (Tc) 150°C (TJ) - - Surface Mount LPTL
    IRFP260PBF

    IRFP260PBF

    MOSFET N-CH 200V 46A TO247-3

    Vishay Siliconix

    		 292 -
    RFQ
    		IRFP260PBF Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 46A (Tc) 10V 55mOhm @ 28A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IPW65R110CFD7XKSA1

    IPW65R110CFD7XKSA1

    HIGH POWER_NEW

    Infineon Technologies

    		 221 -
    RFQ
    		IPW65R110CFD7XKSA1 Datenblatt CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    STF33N60DM2

    STF33N60DM2

    MOSFET N-CH 650V 24A TO220FP

    STMicroelectronics

    		 3,643 -
    RFQ
    		STF33N60DM2 Datenblatt MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 130mOhm @ 12A, 10V 5V @ 250µA 43 nC @ 10 V ±25V 1870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    SIHA17N80E-GE3

    SIHA17N80E-GE3

    N-CHANNEL 800V

    Vishay Siliconix

    		 1,980 -
    RFQ
    		SIHA17N80E-GE3 Datenblatt E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IPB60R099C7ATMA1

    IPB60R099C7ATMA1

    MOSFET N-CH 600V 22A TO263-3

    Infineon Technologies

    		 1,000 -
    RFQ
    		IPB60R099C7ATMA1 Datenblatt CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    NTP150N65S3HF

    NTP150N65S3HF

    MOSFET N-CH 650V 24A TO220-3

    onsemi

    		 745 -
    RFQ
    		NTP150N65S3HF Datenblatt FRFET®, SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    R6020KNXC7G

    R6020KNXC7G

    600V 20A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 769 -
    RFQ
    		R6020KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    SIHG125N60EF-GE3

    SIHG125N60EF-GE3

    MOSFET N-CH 600V 25A TO247AC

    Vishay Siliconix

    		 500 -
    RFQ
    		SIHG125N60EF-GE3 Datenblatt EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    FDBL0090N40

    FDBL0090N40

    MOSFET N-CH 40V 240A 8HPSOF

    onsemi

    		 200 -
    RFQ
    		FDBL0090N40 Datenblatt PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.9mOhm @ 80A, 10V 4V @ 250µA 188 nC @ 10 V ±20V 12000 pF @ 25 V - 357W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    STH320N4F6-6

    STH320N4F6-6

    MOSFET N-CH 40V 200A H2PAK-6

    STMicroelectronics

    		 976 -
    RFQ
    		STH320N4F6-6 Datenblatt DeepGATE™, STripFET™ VI TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.3mOhm @ 80A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13800 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-6
    R6024VNXC7G

    R6024VNXC7G

    600V 13A TO-220FM, PRESTOMOS WIT

    Rohm Semiconductor

    		 1,070 -
    RFQ
    		R6024VNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    STB35N65DM2

    STB35N65DM2

    MOSFET N-CH 650V 28A D2PAK

    STMicroelectronics

    		 971 -
    RFQ
    		STB35N65DM2 Datenblatt MDmesh™ M2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IXTP24N65X2

    IXTP24N65X2

    MOSFET N-CH 650V 24A TO220AB

    Littelfuse Inc.

    		 259 -
    RFQ
    		IXTP24N65X2 Datenblatt Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPL60R085P7AUMA1

    IPL60R085P7AUMA1

    MOSFET N-CH 600V 39A 4VSON

    Infineon Technologies

    		 238 -
    RFQ
    		IPL60R085P7AUMA1 Datenblatt CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 85mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 154W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    STB9NK90Z

    STB9NK90Z

    MOSFET N-CH 900V 8A D2PAK

    STMicroelectronics

    		 680 -
    RFQ
    		STB9NK90Z Datenblatt SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
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