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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTMTS0D6N04CTXG

    NTMTS0D6N04CTXG

    MOSFET N-CH 40V 533A

    onsemi

    		 8,417 -
    RFQ
    		NTMTS0D6N04CTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 533A (Tc) 10V 0.48mOhm @ 50A, 10V 4V @ 250µA 187 nC @ 10 V ±20V 11800 pF @ 20 V - 5W -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    SIHB21N65EF-GE3

    SIHB21N65EF-GE3

    MOSFET N-CH 650V 21A D2PAK

    Vishay Siliconix

    		 143 -
    RFQ
    		SIHB21N65EF-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STW65N60DM6

    STW65N60DM6

    MOSFET N-CH 600V 38A TO247

    STMicroelectronics

    		 592 -
    RFQ
    		STW65N60DM6

    Datenblatt

         		MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - - - - ±25V - - - - - - Through Hole TO-247-3
    IPL60R104C7AUMA1

    IPL60R104C7AUMA1

    MOSFET N-CH 600V 20A 4VSON

    Infineon Technologies

    		 8,897 -
    RFQ
    		IPL60R104C7AUMA1

    Datenblatt

         		CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 104mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 122W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    IPTG063N15NM5ATMA1

    IPTG063N15NM5ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,774 -
    RFQ
    		IPTG063N15NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 163µA 63 nC @ 10 V ±20V 4800 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8
    FDP054N10

    FDP054N10

    MOSFET N-CH 100V 120A TO220-3

    onsemi

    		 676 -
    RFQ
    		FDP054N10

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.5mOhm @ 75A, 10V 4.5V @ 250µA 203 nC @ 10 V ±20V 13280 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    R6025JNXC7G

    R6025JNXC7G

    MOSFET N-CH 600V 25A TO220FM

    Rohm Semiconductor

    		 1,961 -
    RFQ
    		R6025JNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
    NTMT190N65S3H

    NTMT190N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 2,064 -
    RFQ
    		NTMT190N65S3H

    Datenblatt

         		SuperFET® III 4-PowerTSFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 1.4mA 31 nC @ 10 V ±30V 1600 pF @ 400 V - 129W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
    SQJ456EP-T1_GE3

    SQJ456EP-T1_GE3

    MOSFET N-CH 100V 32A PPAK SO-8

    Vishay Siliconix

    		 4,408 -
    RFQ
    		SQJ456EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 6V, 10V 26mOhm @ 9.3A, 10V 3.5V @ 250µA 63 nC @ 10 V ±20V 3342 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    AUIRFP4110

    AUIRFP4110

    MOSFET N-CH 100V 120A TO247AC

    Infineon Technologies

    		 340 -
    RFQ
    		AUIRFP4110

    Datenblatt

         		HEXFET® TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    R8007AND3FRATL

    R8007AND3FRATL

    MOSFET N-CH 800V 7A TO252

    Rohm Semiconductor

    		 4,914 -
    RFQ
    		R8007AND3FRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.6Ohm @ 3.5A, 10V 5V @ 1mA 28 nC @ 10 V ±30V 850 pF @ 25 V - 140W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    STL26NM60N

    STL26NM60N

    MOSFET N-CH 600V 19A POWERFLAT

    STMicroelectronics

    		 2,609 -
    RFQ
    		STL26NM60N

    Datenblatt

         		MDmesh™ II 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2.7A (Ta), 19A (Tc) 10V 185mOhm @ 10A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 1800 pF @ 50 V - 125mW (Ta), 3W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    SIHB120N60E-GE3

    SIHB120N60E-GE3

    MOSFET N-CH 600V 25A D2PAK

    Vishay Siliconix

    		 906 -
    RFQ
    		SIHB120N60E-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STH270N8F7-2

    STH270N8F7-2

    MOSFET N-CH 80V 180A H2PAK

    STMicroelectronics

    		 480 -
    RFQ
    		STH270N8F7-2

    Datenblatt

         		DeepGATE™, STripFET™ VII TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK
    STF13N95K3

    STF13N95K3

    MOSFET N-CH 950V 10A TO220FP

    STMicroelectronics

    		 975 -
    RFQ
    		STF13N95K3

    Datenblatt

         		SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 10A (Tc) 10V 850mOhm @ 5A, 10V 5V @ 100µA 51 nC @ 10 V ±30V 1620 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    TK090U65Z,RQ

    TK090U65Z,RQ

    DTMOS VI TOLL PD=230W F=1MHZ

    Toshiba Semiconductor and Storage

    		 2,118 -
    RFQ
    		TK090U65Z,RQ

    Datenblatt

         		DTMOSVI 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Surface Mount TOLL
    NTHL110N65S3F

    NTHL110N65S3F

    MOSFET N-CH 650V 30A TO247-3

    onsemi

    		 895 -
    RFQ
    		NTHL110N65S3F

    Datenblatt

         		- TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IPW60R125C6FKSA1

    IPW60R125C6FKSA1

    MOSFET N-CH 600V 30A TO247-3

    Infineon Technologies

    		 272 -
    RFQ
    		IPW60R125C6FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA 96 nC @ 10 V ±20V 2127 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    FCH110N65F-F155

    FCH110N65F-F155

    MOSFET N-CH 650V 35A TO247

    onsemi

    		 761 -
    RFQ
    		FCH110N65F-F155

    Datenblatt

         		FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    DMTH8001STLWQ-13

    DMTH8001STLWQ-13

    MOSFET BVDSS: 61V~100V POWERDI10

    Diodes Incorporated

    		 3,013 -
    RFQ
    		DMTH8001STLWQ-13

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 270A (Tc) 10V 1.7mOhm @ 30A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 8894 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount POWERDI1012-8
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