FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IXTP86N20T

IXTP86N20T

MOSFET N-CH 200V 86A TO220AB

Littelfuse Inc.

346 -
RFQ
IXTP86N20T Datenblatt Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor

970 -
RFQ
R8008ANJFRGTL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount LPTS
SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix

466 -
RFQ
SUP40N25-60-E3 Datenblatt TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 5000 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
TK28V65W,LQ

TK28V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

4,966 -
RFQ
TK28V65W,LQ Datenblatt - 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 120mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
NP180N055TUK-E1-AY

NP180N055TUK-E1-AY

MOSFET N-CH 55V 180A TO263-7

Renesas Electronics Corporation

2,182 -
RFQ
NP180N055TUK-E1-AY Datenblatt - TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 180A (Tc) 10V 1.4mOhm @ 90A, 10V 4V @ 250µA 294 nC @ 10 V ±20V 16050 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) - - Surface Mount TO-263-7
NTMTS0D6N04CTXG

NTMTS0D6N04CTXG

MOSFET N-CH 40V 533A

onsemi

8,417 -
RFQ
NTMTS0D6N04CTXG Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 533A (Tc) 10V 0.48mOhm @ 50A, 10V 4V @ 250µA 187 nC @ 10 V ±20V 11800 pF @ 20 V - 5W -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
SIHB21N65EF-GE3

SIHB21N65EF-GE3

MOSFET N-CH 650V 21A D2PAK

Vishay Siliconix

143 -
RFQ
SIHB21N65EF-GE3 Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STW65N60DM6

STW65N60DM6

MOSFET N-CH 600V 38A TO247

STMicroelectronics

592 -
RFQ
STW65N60DM6 Datenblatt MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - - - - ±25V - - - - - - Through Hole TO-247-3
IPL60R104C7AUMA1

IPL60R104C7AUMA1

MOSFET N-CH 600V 20A 4VSON

Infineon Technologies

8,897 -
RFQ
IPL60R104C7AUMA1 Datenblatt CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 104mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 122W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPTG063N15NM5ATMA1

IPTG063N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

1,774 -
RFQ
IPTG063N15NM5ATMA1 Datenblatt OptiMOS™ 5 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 16.2A (Ta), 122A (Tc) 8V, 10V 6.3mOhm @ 50A, 10V 4.6V @ 163µA 63 nC @ 10 V ±20V 4800 pF @ 75 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8
FDP054N10

FDP054N10

MOSFET N-CH 100V 120A TO220-3

onsemi

676 -
RFQ
FDP054N10 Datenblatt PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.5mOhm @ 75A, 10V 4.5V @ 250µA 203 nC @ 10 V ±20V 13280 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
R6025JNXC7G

R6025JNXC7G

MOSFET N-CH 600V 25A TO220FM

Rohm Semiconductor

1,961 -
RFQ
R6025JNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 4.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
NTMT190N65S3H

NTMT190N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,064 -
RFQ
NTMT190N65S3H Datenblatt SuperFET® III 4-PowerTSFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 1.4mA 31 nC @ 10 V ±30V 1600 pF @ 400 V - 129W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
SQJ456EP-T1_GE3

SQJ456EP-T1_GE3

MOSFET N-CH 100V 32A PPAK SO-8

Vishay Siliconix

4,408 -
RFQ
SQJ456EP-T1_GE3 Datenblatt TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 6V, 10V 26mOhm @ 9.3A, 10V 3.5V @ 250µA 63 nC @ 10 V ±20V 3342 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
AUIRFP4110

AUIRFP4110

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies

340 -
RFQ
AUIRFP4110 Datenblatt HEXFET® TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
R8007AND3FRATL

R8007AND3FRATL

MOSFET N-CH 800V 7A TO252

Rohm Semiconductor

4,914 -
RFQ
R8007AND3FRATL Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.6Ohm @ 3.5A, 10V 5V @ 1mA 28 nC @ 10 V ±30V 850 pF @ 25 V - 140W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
STL26NM60N

STL26NM60N

MOSFET N-CH 600V 19A POWERFLAT

STMicroelectronics

2,609 -
RFQ
STL26NM60N Datenblatt MDmesh™ II 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2.7A (Ta), 19A (Tc) 10V 185mOhm @ 10A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 1800 pF @ 50 V - 125mW (Ta), 3W (Tc) 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
SIHB120N60E-GE3

SIHB120N60E-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

906 -
RFQ
SIHB120N60E-GE3 Datenblatt E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STH270N8F7-2

STH270N8F7-2

MOSFET N-CH 80V 180A H2PAK

STMicroelectronics

480 -
RFQ
STH270N8F7-2 Datenblatt DeepGATE™, STripFET™ VII TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 10V 2.1mOhm @ 90A, 10V 4V @ 250µA 193 nC @ 10 V ±20V 13600 pF @ 50 V - 315W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK
STF13N95K3

STF13N95K3

MOSFET N-CH 950V 10A TO220FP

STMicroelectronics

975 -
RFQ
STF13N95K3 Datenblatt SuperMESH3™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 10A (Tc) 10V 850mOhm @ 5A, 10V 5V @ 100µA 51 nC @ 10 V ±30V 1620 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
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