FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRFP260PBF

IRFP260PBF

MOSFET N-CH 200V 46A TO247-3

Vishay Siliconix

292 -
RFQ
IRFP260PBF

Datenblatt

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 46A (Tc) 10V 55mOhm @ 28A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IPW65R110CFD7XKSA1

IPW65R110CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

221 -
RFQ
IPW65R110CFD7XKSA1

Datenblatt

CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 110mOhm @ 9.7A, 10V 4.5V @ 480µA 41 nC @ 10 V ±20V 1942 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
STF33N60DM2

STF33N60DM2

MOSFET N-CH 650V 24A TO220FP

STMicroelectronics

3,643 -
RFQ
STF33N60DM2

Datenblatt

MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 130mOhm @ 12A, 10V 5V @ 250µA 43 nC @ 10 V ±25V 1870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIHA17N80E-GE3

SIHA17N80E-GE3

N-CHANNEL 800V

Vishay Siliconix

1,980 -
RFQ
SIHA17N80E-GE3

Datenblatt

E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IPB60R099C7ATMA1

IPB60R099C7ATMA1

MOSFET N-CH 600V 22A TO263-3

Infineon Technologies

1,000 -
RFQ
IPB60R099C7ATMA1

Datenblatt

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
NTP150N65S3HF

NTP150N65S3HF

MOSFET N-CH 650V 24A TO220-3

onsemi

745 -
RFQ
NTP150N65S3HF

Datenblatt

FRFET®, SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
R6020KNXC7G

R6020KNXC7G

600V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

769 -
RFQ
R6020KNXC7G

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
SIHG125N60EF-GE3

SIHG125N60EF-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix

500 -
RFQ
SIHG125N60EF-GE3

Datenblatt

EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
FDBL0090N40

FDBL0090N40

MOSFET N-CH 40V 240A 8HPSOF

onsemi

200 -
RFQ
FDBL0090N40

Datenblatt

PowerTrench® 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.9mOhm @ 80A, 10V 4V @ 250µA 188 nC @ 10 V ±20V 12000 pF @ 25 V - 357W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
STH320N4F6-6

STH320N4F6-6

MOSFET N-CH 40V 200A H2PAK-6

STMicroelectronics

976 -
RFQ
STH320N4F6-6

Datenblatt

DeepGATE™, STripFET™ VI TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.3mOhm @ 80A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13800 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-6
R6024VNXC7G

R6024VNXC7G

600V 13A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor

1,070 -
RFQ
R6024VNXC7G

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-220FM
STB35N65DM2

STB35N65DM2

MOSFET N-CH 650V 28A D2PAK

STMicroelectronics

971 -
RFQ
STB35N65DM2

Datenblatt

MDmesh™ M2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
IXTP24N65X2

IXTP24N65X2

MOSFET N-CH 650V 24A TO220AB

Littelfuse Inc.

259 -
RFQ
IXTP24N65X2

Datenblatt

Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPL60R085P7AUMA1

IPL60R085P7AUMA1

MOSFET N-CH 600V 39A 4VSON

Infineon Technologies

238 -
RFQ
IPL60R085P7AUMA1

Datenblatt

CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 85mOhm @ 11.8A, 10V 4V @ 590µA 51 nC @ 10 V ±20V 2180 pF @ 400 V - 154W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
STB9NK90Z

STB9NK90Z

MOSFET N-CH 900V 8A D2PAK

STMicroelectronics

680 -
RFQ
STB9NK90Z

Datenblatt

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
IXTP86N20T

IXTP86N20T

MOSFET N-CH 200V 86A TO220AB

Littelfuse Inc.

346 -
RFQ
IXTP86N20T

Datenblatt

Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor

970 -
RFQ
R8008ANJFRGTL

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount LPTS
SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix

466 -
RFQ
SUP40N25-60-E3

Datenblatt

TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 5000 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
TK28V65W,LQ

TK28V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

4,966 -
RFQ
TK28V65W,LQ

Datenblatt

- 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 120mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
NP180N055TUK-E1-AY

NP180N055TUK-E1-AY

MOSFET N-CH 55V 180A TO263-7

Renesas Electronics Corporation

2,182 -
RFQ
NP180N055TUK-E1-AY

Datenblatt

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 180A (Tc) 10V 1.4mOhm @ 90A, 10V 4V @ 250µA 294 nC @ 10 V ±20V 16050 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) - - Surface Mount TO-263-7
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