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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFP22N60P3

    IXFP22N60P3

    MOSFET N-CH 600V 22A TO220AB

    Littelfuse Inc.

    		 291 -
    RFQ
    		IXFP22N60P3 Datenblatt HiPerFET™, Polar3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXTP1R4N120P

    IXTP1R4N120P

    MOSFET N-CH 1200V 1.4A TO220AB

    Littelfuse Inc.

    		 149 -
    RFQ
    		IXTP1R4N120P Datenblatt Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 500mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±20V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    R6524KNX3C16

    R6524KNX3C16

    650V 24A, TO-220AB, HIGH-SPEED S

    Rohm Semiconductor

    		 118 -
    RFQ
    		R6524KNX3C16 Datenblatt - TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 253W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    STF19NM50N

    STF19NM50N

    MOSFET N-CH 500V 14A TO220FP

    STMicroelectronics

    		 982 -
    RFQ
    		STF19NM50N Datenblatt MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    SIHK185N60EF-T1GE3

    SIHK185N60EF-T1GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 2,000 -
    RFQ
    		SIHK185N60EF-T1GE3 Datenblatt EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    STB14NK60ZT4

    STB14NK60ZT4

    MOSFET N-CH 600V 13.5A D2PAK

    STMicroelectronics

    		 250 -
    RFQ
    		STB14NK60ZT4 Datenblatt SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13.5A (Tc) 10V 500mOhm @ 6A, 10V 4.5V @ 100µA 75 nC @ 10 V ±30V 2220 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    AOB29S50L

    AOB29S50L

    MOSFET N-CH 500V 29A TO263

    Alpha & Omega Semiconductor Inc.

    		 840 -
    RFQ
    		AOB29S50L Datenblatt aMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 150mOhm @ 14.5A, 10V 3.9V @ 250µA 26.6 nC @ 10 V ±30V 1312 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPP60R090CFD7XKSA1

    IPP60R090CFD7XKSA1

    MOSFET N-CH 600V 25A TO220-3

    Infineon Technologies

    		 462 -
    RFQ
    		IPP60R090CFD7XKSA1 Datenblatt OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    STP15N80K5

    STP15N80K5

    MOSFET N-CH 800V 14A TO220

    STMicroelectronics

    		 448 -
    RFQ
    		STP15N80K5 Datenblatt SuperMESH5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 375mOhm @ 7A, 10V 5V @ 100µA 32 nC @ 10 V ±30V 1100 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FDPF4D5N10C

    FDPF4D5N10C

    MOSFET N-CH 100V 128A TO220F

    onsemi

    		 7,341 -
    RFQ
    		FDPF4D5N10C Datenblatt PowerTrench® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 128A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 310µA 68 nC @ 10 V ±20V 5065 pF @ 50 V - 2.4W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    NP110N055PUK-E1-AY

    NP110N055PUK-E1-AY

    MOSFET N-CH 55V 110A TO263

    Renesas Electronics Corporation

    		 799 -
    RFQ
    		NP110N055PUK-E1-AY Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 1.75mOhm @ 55A, 10V 4V @ 250µA 294 nC @ 10 V ±20V 16050 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) - - Surface Mount TO-263
    STW50N65DM2AG

    STW50N65DM2AG

    MOSFET N-CH 650V 28A TO247

    STMicroelectronics

    		 596 -
    RFQ
    		STW50N65DM2AG Datenblatt MDmesh™ DM2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 87mOhm @ 19A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 3200 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    IPB80N08S207ATMA1

    IPB80N08S207ATMA1

    MOSFET N-CH 75V 80A TO263-3

    Infineon Technologies

    		 409 -
    RFQ
    		IPB80N08S207ATMA1 Datenblatt OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    SIHH14N60EF-T1-GE3

    SIHH14N60EF-T1-GE3

    MOSFET N-CH 600V 15A PPAK 8 X 8

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SIHH14N60EF-T1-GE3 Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 266mOhm @ 7A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 1449 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    STF21N65M5

    STF21N65M5

    MOSFET N-CH 650V 17A TO220FP

    STMicroelectronics

    		 315 -
    RFQ
    		STF21N65M5 Datenblatt MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    FCPF290N80

    FCPF290N80

    MOSFET N-CH 800V 17A TO220F

    onsemi

    		 665 -
    RFQ
    		FCPF290N80 Datenblatt PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    NTB011N15MC

    NTB011N15MC

    NTB011N15MC

    onsemi

    		 760 -
    RFQ
    		NTB011N15MC Datenblatt PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 12.5A (Ta), 75.4A (Tc) 8V, 10V 10.9mOhm @ 41A, 10V 4.5V @ 223µA 37 nC @ 10 V ±20V 2810 pF @ 75 V - 3.75W (Ta), 136.4W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHG21N80AE-GE3

    SIHG21N80AE-GE3

    MOSFET N-CH 800V 17.4A TO247AC

    Vishay Siliconix

    		 485 -
    RFQ
    		SIHG21N80AE-GE3 Datenblatt E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IPB100N12S305ATMA1

    IPB100N12S305ATMA1

    MOSFET N-CH 120V 100A TO263-3

    Infineon Technologies

    		 3,882 -
    RFQ
    		IPB100N12S305ATMA1 Datenblatt OptiMOS™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 185 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-1
    FCMT180N65S3

    FCMT180N65S3

    MOSFET N-CH 650V 17A POWER88

    onsemi

    		 1,515 -
    RFQ
    		FCMT180N65S3 Datenblatt SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 180mOhm @ 8.5A, 10V 4.5V @ 1.8mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power88
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