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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    R6530KNXC7G

    R6530KNXC7G

    650V 30A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 884 -
    RFQ
    		R6530KNXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6530ENXC7G

    R6530ENXC7G

    650V 30A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 713 -
    RFQ
    		R6530ENXC7G Datenblatt - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 4V @ 960µA 90 nC @ 10 V ±20V 2100 pF @ 25 V - 86W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    NTPF450N80S3Z

    NTPF450N80S3Z

    MOSFET N-CH 800V 11A TO220-3

    onsemi

    		 928 -
    RFQ
    		NTPF450N80S3Z Datenblatt SuperFET® III TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) - 450mOhm @ 5.5A, 10V 3.8V @ 240µA 19.3 nC @ 10 V ±20V 885 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3 Fullpack/TO-220F-3SG
    RSJ301N10TL

    RSJ301N10TL

    NCH 100V 30A POWER MOSFET : RSJ3

    Rohm Semiconductor

    		 466 -
    RFQ
    		RSJ301N10TL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta) 4V, 10V 46mOhm @ 15A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 2100 pF @ 25 V - 50W (Ta) 150°C (TJ) - - Surface Mount TO-263S
    R6004PND3FRATL

    R6004PND3FRATL

    MOSFET N-CH 600V 4A TO252

    Rohm Semiconductor

    		 4,512 -
    RFQ
    		R6004PND3FRATL Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4.5V @ 1mA 11 nC @ 10 V ±25V 280 pF @ 25 V - 65W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    STB85NF55T4

    STB85NF55T4

    MOSFET N-CH 55V 80A D2PAK

    STMicroelectronics

    		 487 -
    RFQ
    		STB85NF55T4 Datenblatt STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    NTMFS006N12MCT1G

    NTMFS006N12MCT1G

    POWER MOSFET, 120V SINGLE N CHAN

    onsemi

    		 19,500 -
    RFQ
    		NTMFS006N12MCT1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 15A (Ta), 93A (Tc) 6V, 10V 6mOhm @ 46A, 10V 4V @ 260µA 42 nC @ 10 V ±20V 3365 pF @ 60 V - 2.7W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IPB180N04S4H0ATMA1

    IPB180N04S4H0ATMA1

    MOSFET N-CH 40V 180A TO263-7-3

    Infineon Technologies

    		 1,573 -
    RFQ
    		IPB180N04S4H0ATMA1 Datenblatt OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.1mOhm @ 100A, 10V 4V @ 180µA 225 nC @ 10 V ±20V 17940 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    IRFS11N50ATRLP

    IRFS11N50ATRLP

    MOSFET N-CH 500V 11A TO263AB

    Vishay Siliconix

    		 325 -
    RFQ
    		IRFS11N50ATRLP Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB
    RS1P600BHTB1

    RS1P600BHTB1

    NCH 100V 60A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,425 -
    RFQ
    		RS1P600BHTB1 Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta), 60A (Tc) 6V, 10V 8.8mOhm @ 18A, 10V 4V @ 1mA 64 nC @ 10 V ±20V 4080 pF @ 50 V - 3W (Ta), 35W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    TK20V60W5,LVQ

    TK20V60W5,LVQ

    MOSFET N-CH 600V 20A 4DFN

    Toshiba Semiconductor and Storage

    		 4,812 -
    RFQ
    		TK20V60W5,LVQ Datenblatt DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
    PJMD360N60EC_L2_00001

    PJMD360N60EC_L2_00001

    600V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 5,985 -
    RFQ
    		PJMD360N60EC_L2_00001 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 18.7 nC @ 10 V ±30V 735 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NVMJST1D3N04CTXG

    NVMJST1D3N04CTXG

    TRENCH 6 40V LFPAK 5X7

    onsemi

    		 2,955 -
    RFQ
    		NVMJST1D3N04CTXG Datenblatt - 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 386A (Tc) 10V 1.39mOhm @ 50A, 10V 3.5V @ 170µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
    IPBE65R230CFD7AATMA1

    IPBE65R230CFD7AATMA1

    MOSFET N-CH 650V 11A TO263-7

    Infineon Technologies

    		 1,931 -
    RFQ
    		IPBE65R230CFD7AATMA1 Datenblatt CoolMOS™ CFD7A TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3-10
    NVMFS5C638NLWFT1G

    NVMFS5C638NLWFT1G

    MOSFET N-CH 60V 26A/133A 5DFN

    onsemi

    		 1,322 -
    RFQ
    		NVMFS5C638NLWFT1G Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 133A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V 2V @ 250µA 40.7 nC @ 10 V ±20V 2880 pF @ 25 V - 4W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    SIHG15N80AE-GE3

    SIHG15N80AE-GE3

    MOSFET N-CH 800V 13A TO247AC

    Vishay Siliconix

    		 400 -
    RFQ
    		SIHG15N80AE-GE3 Datenblatt E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    BUK7S1R5-40HJ

    BUK7S1R5-40HJ

    MOSFET N-CH 40V 260A LFPAK88

    Nexperia USA Inc.

    		 1,956 -
    RFQ
    		BUK7S1R5-40HJ Datenblatt - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 260A (Tc) 10V 1.5mOhm @ 25A, 10V 3.6V @ 1mA 93 nC @ 10 V +20V, -10V 6712 pF @ 25 V - 242W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK88 (SOT1235)
    IPB024N08NF2SATMA1

    IPB024N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-3

    Infineon Technologies

    		 604 -
    RFQ
    		IPB024N08NF2SATMA1 Datenblatt StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 107A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 85µA 133 nC @ 10 V ±20V 6200 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    R6530ENZ4C13

    R6530ENZ4C13

    650V 30A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    		 482 -
    RFQ
    		R6530ENZ4C13 Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 4V @ 960µA 90 nC @ 10 V ±20V 2100 pF @ 25 V - 305W (Tc) 150°C (TJ) - - Through Hole TO-247G
    R6530KNZ4C13

    R6530KNZ4C13

    650V 30A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 353 -
    RFQ
    		R6530KNZ4C13 Datenblatt - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 305W (Tc) 150°C (TJ) - - Through Hole TO-247G
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