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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    R6015KNJTL

    R6015KNJTL

    MOSFET N-CH 600V 15A LPTS

    Rohm Semiconductor

    		 3,982 -
    RFQ
    		R6015KNJTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 37.5 nC @ 10 V ±20V 1050 pF @ 25 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    IPL60R185C7AUMA1

    IPL60R185C7AUMA1

    MOSFET N-CH 600V 13A 4VSON

    Infineon Technologies

    		 2,922 -
    RFQ
    		IPL60R185C7AUMA1

    Datenblatt

         		CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 185mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    NVD5C648NLT4G

    NVD5C648NLT4G

    MOSFET N-CH 60V 18A/89A DPAK

    onsemi

    		 1,455 -
    RFQ
    		NVD5C648NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 89A (Tc) 4.5V, 10V 4.1mOhm @ 45A, 10V 2.1V @ 250µA 39 nC @ 10 V ±20V 2900 pF @ 25 V - 3.1W (Ta), 72W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    IPB012N04NF2SATMA1

    IPB012N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 795 -
    RFQ
    		IPB012N04NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 197A (Tc) 6V, 10V 1.25mOhm @ 100A, 10V 3.4V @ 189µA 239 nC @ 10 V ±20V 11300 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    RJK1055DPB-00#J5

    RJK1055DPB-00#J5

    MOSFET N-CH 100V 23A LFPAK

    Renesas Electronics Corporation

    		 7,335 -
    RFQ
    		RJK1055DPB-00#J5

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta) 10V 17mOhm @ 11.5A, 10V - 35 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    R6524KNZ4C13

    R6524KNZ4C13

    650V 24A TO-247, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 1,010 -
    RFQ
    		R6524KNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
    R6524ENZ4C13

    R6524ENZ4C13

    650V 24A TO-247, LOW-NOISE POWER

    Rohm Semiconductor

    		 475 -
    RFQ
    		R6524ENZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IPL60R185CFD7AUMA1

    IPL60R185CFD7AUMA1

    MOSFET N-CH 600V 14A 4VSON

    Infineon Technologies

    		 2,973 -
    RFQ
    		IPL60R185CFD7AUMA1

    Datenblatt

         		CoolMOS™ CFD7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 185mOhm @ 6A, 10V 4.5V @ 300µA 28 nC @ 10 V ±20V 1199 pF @ 400 V - 85W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    SIHP21N80AE-GE3

    SIHP21N80AE-GE3

    MOSFET N-CH 800V 17.4A TO220AB

    Vishay Siliconix

    		 976 -
    RFQ
    		SIHP21N80AE-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHP17N80AEF-GE3

    SIHP17N80AEF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 928 -
    RFQ
    		SIHP17N80AEF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IQE050N08NM5ATMA1

    IQE050N08NM5ATMA1

    TRENCH 40<-<100V PG-TSON-8

    Infineon Technologies

    		 9,048 -
    RFQ
    		IQE050N08NM5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-4
    RD3L07BBGTL1

    RD3L07BBGTL1

    NCH 60V 115A, TO-252, POWER MOSF

    Rohm Semiconductor

    		 2,359 -
    RFQ
    		RD3L07BBGTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 4.5V, 10V 3.9mOhm @ 70A, 10V 2.5V @ 1mA 47 nC @ 10 V ±20V 2950 pF @ 30 V - 102W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IXFP8N85X

    IXFP8N85X

    MOSFET N-CH 850V 8A TO220AB

    IXYS

    		 278 -
    RFQ
    		IXFP8N85X

    Datenblatt

         		HiPerFET™, Ultra X TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (IXFP)
    TSM13ND50CI

    TSM13ND50CI

    MOSFET N-CH 500V 13A ITO220

    Taiwan Semiconductor Corporation

    		 3,848 -
    RFQ
    		TSM13ND50CI

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 3.3A, 10V 3.8V @ 250µA 39 nC @ 10 V ±30V 1877 pF @ 50 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    PSMN0R7-25YLDX

    PSMN0R7-25YLDX

    MOSFET N-CH 25V 300A LFPAK56

    Nexperia USA Inc.

    		 3,113 -
    RFQ
    		PSMN0R7-25YLDX

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 300A (Tc) 4.5V, 10V 0.72mOhm @ 25A, 10V 2.2V @ 1mA 110.2 nC @ 10 V ±20V 8320 pF @ 12 V - 158W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LFPAK56; Power-SO8
    FCPF380N60E

    FCPF380N60E

    MOSFET N-CH 600V 10.2A TO220F

    onsemi

    		 1,945 -
    RFQ
    		FCPF380N60E

    Datenblatt

         		SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    DMTH6004SCTBQ-13

    DMTH6004SCTBQ-13

    MOSFET N-CH 60V 100A TO263AB

    Diodes Incorporated

    		 467 -
    RFQ
    		DMTH6004SCTBQ-13

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263
    PSMNR60-25YLHX

    PSMNR60-25YLHX

    MOSFET N-CH 25V 300A LFPAK56

    Nexperia USA Inc.

    		 3,975 -
    RFQ
    		PSMNR60-25YLHX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 300A (Tc) 4.5V, 10V 700mOhm @ 25A, 10V 2.2V @ 2mA 147 nC @ 10 V ±20V 8117 pF @ 12 V - 268W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRF540STRRPBF

    IRF540STRRPBF

    MOSFET N-CH 100V 28A D2PAK

    Vishay Siliconix

    		 1,476 -
    RFQ
    		IRF540STRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIHP240N60E-GE3

    SIHP240N60E-GE3

    MOSFET N-CH 600V 12A TO220AB

    Vishay Siliconix

    		 159 -
    RFQ
    		SIHP240N60E-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 795 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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