FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FCPF380N60E

FCPF380N60E

MOSFET N-CH 600V 10.2A TO220F

onsemi

1,945 -
RFQ
FCPF380N60E Datenblatt SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
DMTH6004SCTBQ-13

DMTH6004SCTBQ-13

MOSFET N-CH 60V 100A TO263AB

Diodes Incorporated

467 -
RFQ
DMTH6004SCTBQ-13 Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263
PSMNR60-25YLHX

PSMNR60-25YLHX

MOSFET N-CH 25V 300A LFPAK56

Nexperia USA Inc.

3,975 -
RFQ
PSMNR60-25YLHX Datenblatt - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 300A (Tc) 4.5V, 10V 700mOhm @ 25A, 10V 2.2V @ 2mA 147 nC @ 10 V ±20V 8117 pF @ 12 V - 268W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
IRF540STRRPBF

IRF540STRRPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix

1,476 -
RFQ
IRF540STRRPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHP240N60E-GE3

SIHP240N60E-GE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix

159 -
RFQ
SIHP240N60E-GE3 Datenblatt E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 795 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
STL7LN65K5AG

STL7LN65K5AG

MOSFET N-CH 650V 5A PWRFLAT VHV

STMicroelectronics

2,979 -
RFQ
STL7LN65K5AG Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 100µA 11.7 nC @ 10 V ±30V 270 pF @ 100 V - 79W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6) VHV
NTP190N65S3HF

NTP190N65S3HF

MOSFET N-CH 650V 20A TO220-3

onsemi

724 -
RFQ
NTP190N65S3HF Datenblatt FRFET®, SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IQE030N06NM5CGSCATMA1

IQE030N06NM5CGSCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon Technologies

6,000 -
RFQ
IQE030N06NM5CGSCATMA1 Datenblatt OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 132A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9-1
IQE050N08NM5SCATMA1

IQE050N08NM5SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon Technologies

5,000 -
RFQ
IQE050N08NM5SCATMA1 Datenblatt OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 99A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 44 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies

1,425 -
RFQ
IPP034NE7N3GXKSA1 Datenblatt OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V ±20V 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
RCJ220N25TL

RCJ220N25TL

MOSFET N-CH 250V 22A LPTS

Rohm Semiconductor

946 -
RFQ
RCJ220N25TL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 140mOhm @ 11A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 3200 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) - - Surface Mount LPTS
NTMYS1D2N04CLTWG

NTMYS1D2N04CLTWG

MOSFET N-CH 40V 44A/258A LFPAK4

onsemi

3,367 -
RFQ
NTMYS1D2N04CLTWG Datenblatt - SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 44A (Ta), 258A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 180µA 109 nC @ 10 V ±20V 6330 pF @ 20 V - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
CSD18542KTTT

CSD18542KTTT

MOSFET N-CH 60V 200A/170A DDPAK

Texas Instruments

288 -
RFQ
CSD18542KTTT Datenblatt NexFET™ TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 4mOhm @ 100A, 10V 2.2V @ 250µA 57 nC @ 10 V ±20V 5070 pF @ 30 V - 250W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (DDPAK-3)
NTD250N65S3H

NTD250N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,495 -
RFQ
NTD250N65S3H Datenblatt SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 250mOhm @ 6.5A, 10V 4V @ 1.1mA 24 nC @ 10 V ±30V 1261 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
DMTH41M2SPSQ-13

DMTH41M2SPSQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,112 -
RFQ
DMTH41M2SPSQ-13 Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 225A (Tc) 10V 1.2mOhm @ 30A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 11085 pF @ 20 V - 3.4W (Ta), 158W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type K)
MCACL110N08Y-TP

MCACL110N08Y-TP

MOSFET N-CH 80 110A DFN5060

Micro Commercial Co

9,098 -
RFQ
MCACL110N08Y-TP Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 6V, 10V 3.9mOhm @ 55A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 5290 pF @ 40 V - 125W -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
IQE030N06NM5SCATMA1

IQE030N06NM5SCATMA1

OPTIMOS LOWVOLTAGE POWER MOSFET

Infineon Technologies

4,990 -
RFQ
IQE030N06NM5SCATMA1 Datenblatt OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 132A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
R6011KND3TL1

R6011KND3TL1

MOSFET N-CH 600V 11A TO252

Rohm Semiconductor

2,468 -
RFQ
R6011KND3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 124W (Tc) 150°C (TJ) - - Surface Mount TO-252
FCPF850N80Z

FCPF850N80Z

MOSFET N-CH 800V 6A TO220F

onsemi

905 -
RFQ
FCPF850N80Z Datenblatt SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
IPB040N08NF2SATMA1

IPB040N08NF2SATMA1

MOSFET N-CH 80V 107A D2PAK

Infineon Technologies

790 -
RFQ
IPB040N08NF2SATMA1 Datenblatt StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 107A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
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