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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFIBC20GPBF

    IRFIBC20GPBF

    MOSFET N-CH 600V 1.7A TO220-3

    Vishay Siliconix

    		 1,045 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRFS7734TRLPBF

    IRFS7734TRLPBF

    MOSFET N-CH 75V 183A D2PAK

    Infineon Technologies

    		 296 -
    RFQ
    		IRFS7734TRLPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IQE050N08NM5CGATMA1

    IQE050N08NM5CGATMA1

    TRENCH 40<-<100V PG-TTFN-9

    Infineon Technologies

    		 9,687 -
    RFQ
    		IQE050N08NM5CGATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-1
    NVMFS6H818NT1G

    NVMFS6H818NT1G

    MOSFET N-CH 80V 20A/123A 5DFN

    onsemi

    		 1,324 -
    RFQ
    		NVMFS6H818NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 123A (Tc) 10V 3.7mOhm @ 20A, 10V 4V @ 190µA 46 nC @ 10 V ±20V 3100 pF @ 40 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IPL65R200CFD7AUMA1

    IPL65R200CFD7AUMA1

    COOLMOS CFD7 SUPERJUNCTION MOSFE

    Infineon Technologies

    		 3,000 -
    RFQ
    		IPL65R200CFD7AUMA1

    Datenblatt

         		CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 200mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 81W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    NP89N04PUK-E1-AY

    NP89N04PUK-E1-AY

    MOSFET N-CH 40V 90A TO263

    Renesas Electronics Corporation

    		 3,075 -
    RFQ
    		NP89N04PUK-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.95mOhm @ 45A, 5V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) - - Surface Mount TO-263
    STL16N60M6

    STL16N60M6

    MOSFET N-CH 600V POWERFLAT HV

    STMicroelectronics

    		 1,922 -
    RFQ
    		STL16N60M6

    Datenblatt

         		MDmesh™ 8-PowerVDFN Tape & Reel (TR) Active - - - 8A (Tc) - - - - - - - - - - - Surface Mount PowerFlat™ (5x6) HV
    PSMNR89-25YLEX

    PSMNR89-25YLEX

    PSMNR89-25YLE/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,350 -
    RFQ
    		PSMNR89-25YLEX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 270A (Tc) 7V, 10V 0.98mOhm @ 25A, 10V 2.2V @ 2mA 120 nC @ 10 V ±20V 7452 pF @ 12 V - 224W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SIHG11N80AE-GE3

    SIHG11N80AE-GE3

    MOSFET N-CH 800V 8A TO247AC

    Vishay Siliconix

    		 480 -
    RFQ
    		SIHG11N80AE-GE3

    Datenblatt

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    SIHA17N80AE-GE3

    SIHA17N80AE-GE3

    MOSFET N-CH 800V 7A TO220

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHA17N80AE-GE3

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    FCP850N80Z

    FCP850N80Z

    MOSFET N-CH 800V 8A TO220-3

    onsemi

    		 766 -
    RFQ
    		FCP850N80Z

    Datenblatt

         		SuperFET® II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 136W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    R6030ENZC17

    R6030ENZC17

    MOSFET N-CH 600V 30A TO3PF

    Rohm Semiconductor

    		 300 -
    RFQ
    		R6030ENZC17

    Datenblatt

         		- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    IQE065N10NM5SCATMA1

    IQE065N10NM5SCATMA1

    OPTIMOS LOWVOLTAGE POWER MOSFET

    Infineon Technologies

    		 5,752 -
    RFQ
    		IQE065N10NM5SCATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 43 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
    SI4456DY-T1-E3

    SI4456DY-T1-E3

    MOSFET N-CH 40V 33A 8SO

    Vishay Siliconix

    		 2,475 -
    RFQ
    		SI4456DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5670 pF @ 20 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IPB120N04S401ATMA1

    IPB120N04S401ATMA1

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    		 1,813 -
    RFQ
    		IPB120N04S401ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    NTMFS0D7N03CGT1G

    NTMFS0D7N03CGT1G

    MOSFET N-CH 30V 59A/409A 5DFN

    onsemi

    		 998 -
    RFQ
    		NTMFS0D7N03CGT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 59A (Ta), 409A (Tc) 10V 0.65mOhm @ 30A, 10V 2.2V @ 280µA 147 nC @ 10 V ±20V 12300 pF @ 15 V - 4W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IRFZ44RPBF-BE3

    IRFZ44RPBF-BE3

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 254 -
    RFQ
    		IRFZ44RPBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    PSMN5R5-100YSFX

    PSMN5R5-100YSFX

    PSMN5R5-100YSF/SOT669/LFPAK

    Nexperia USA Inc.

    		 1,222 -
    RFQ
    		PSMN5R5-100YSFX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 115A (Tc) 7V, 10V 5.5mOhm @ 25A, 10V 4V @ 1mA 95 nC @ 10 V ±20V 6238 pF @ 50 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    FDB088N08

    FDB088N08

    MOSFET N-CH 75V 120A D2PAK

    onsemi

    		 320 -
    RFQ
    		FDB088N08

    Datenblatt

         		PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 8.8mOhm @ 75A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 6595 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    RRH140P03TB1

    RRH140P03TB1

    MOSFET P-CH 30V 14A 8SOP

    Rohm Semiconductor

    		 13,283 -
    RFQ
    		RRH140P03TB1

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4V, 10V 7mOhm @ 14A, 10V 2.5V @ 1mA 80 nC @ 5 V ±20V 8000 pF @ 10 V - 650mW (Ta) 150°C (TJ) - - Surface Mount 8-SOP
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