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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AOB66616L

    AOB66616L

    MOSFET N-CH 60V 38.5A/140A TO263

    Alpha & Omega Semiconductor Inc.

    		 570 -
    RFQ
    		AOB66616L

    Datenblatt

         		AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 38.5A (Ta), 140A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 3.4V @ 250µA 60 nC @ 10 V ±20V 2870 pF @ 30 V - 8.3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF840LCLPBF

    IRF840LCLPBF

    MOSFET N-CH 500V 8A I2PAK

    Vishay Siliconix

    		 1,965 -
    RFQ
    		IRF840LCLPBF

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    R6020JNZC17

    R6020JNZC17

    MOSFET N-CH 600V 20A TO3PF

    Rohm Semiconductor

    		 296 -
    RFQ
    		R6020JNZC17

    Datenblatt

         		- TO-3P-3 Full Pack Bag Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) 150°C (TJ) - - Through Hole TO-3PF
    IPB120N04S402ATMA1

    IPB120N04S402ATMA1

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    		 3,008 -
    RFQ
    		IPB120N04S402ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IQE065N10NM5CGATMA1

    IQE065N10NM5CGATMA1

    TRENCH >=100V PG-TTFN-9

    Infineon Technologies

    		 9,915 -
    RFQ
    		IQE065N10NM5CGATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 85A (Tc) 6V, 10V 6.5mOhm @ 20A, 10V 3.8V @ 48µA 42 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-1
    PJMP360N60EC_T0_00001

    PJMP360N60EC_T0_00001

    600V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 1,980 -
    RFQ
    		PJMP360N60EC_T0_00001

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 18.7 nC @ 10 V ±30V 735 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    IPP77N06S212AKSA2

    IPP77N06S212AKSA2

    MOSFET N-CH 55V 77A TO220-3

    Infineon Technologies

    		 495 -
    RFQ
    		IPP77N06S212AKSA2

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IAUA250N04S6N008AUMA1

    IAUA250N04S6N008AUMA1

    OPTIMOS POWER MOSFET

    Infineon Technologies

    		 1,950 -
    RFQ
    		IAUA250N04S6N008AUMA1

    Datenblatt

         		OptiMOS™ 6 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 51A (Ta) 7V, 10V 0.8mOhm @ 100A, 10V 3V @ 90µA 109 nC @ 10 V ±20V 7088 pF @ 25 V - 172W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-5-1
    IPB160N04S4H1ATMA1

    IPB160N04S4H1ATMA1

    MOSFET N-CH 40V 160A TO263-7

    Infineon Technologies

    		 770 -
    RFQ
    		IPB160N04S4H1ATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 110µA 137 nC @ 10 V ±20V 10920 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    IPA057N08N3GXKSA1

    IPA057N08N3GXKSA1

    MOSFET N-CH 80V 60A TO220-FP

    Infineon Technologies

    		 440 -
    RFQ
    		IPA057N08N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 6V, 10V 5.7mOhm @ 60A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
    STP200NF03

    STP200NF03

    MOSFET N-CH 30V 120A TO220AB

    STMicroelectronics

    		 981 -
    RFQ
    		STP200NF03

    Datenblatt

         		STripFET™ III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    STD9NM60N

    STD9NM60N

    MOSFET N-CH 600V 6.5A DPAK

    STMicroelectronics

    		 2,500 -
    RFQ
    		STD9NM60N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 745mOhm @ 3.25A, 10V 4V @ 250µA 17.4 nC @ 10 V ±25V 452 pF @ 50 V - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
    FDP120N10

    FDP120N10

    MOSFET N-CH 100V 74A TO220-3

    onsemi

    		 226 -
    RFQ
    		FDP120N10

    Datenblatt

         		PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 74A (Tc) 10V 12mOhm @ 74A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 5605 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    SIDR390DP-T1-GE3

    SIDR390DP-T1-GE3

    MOSFET N-CH 30V 69.9A/100A PPAK

    Vishay Siliconix

    		 7,487 -
    RFQ
    		SIDR390DP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 69.9A (Ta), 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    RS6R035BHTB1

    RS6R035BHTB1

    NCH 150V 35A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,420 -
    RFQ
    		RS6R035BHTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 6V, 10V 41mOhm @ 35A, 10V 4V @ 1mA 25 nC @ 10 V ±20V 1470 pF @ 75 V - 3W (Ta), 73W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    IPF016N06NF2SATMA1

    IPF016N06NF2SATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 989 -
    RFQ
    		IPF016N06NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 223A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
    STI6N90K5

    STI6N90K5

    MOSFET N-CH 900V 6A I2PAK

    STMicroelectronics

    		 125 -
    RFQ
    		STI6N90K5

    Datenblatt

         		MDmesh™ K5 TO-262-3 Full Pack, I2PAK Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    NTMFS4C020NT1G

    NTMFS4C020NT1G

    MOSFET N-CH 30V 47A/303A 5DFN

    onsemi

    		 4,241 -
    RFQ
    		NTMFS4C020NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 303A (Tc) 4.5V, 10V 0.7mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.2W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SIDR402EP-T1-RE3

    SIDR402EP-T1-RE3

    N-CHANNEL 40 V (D-S) 175C MOSFET

    Vishay Siliconix

    		 5,930 -
    RFQ
    		SIDR402EP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65.2A (Ta), 291A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    R6009END3TL1

    R6009END3TL1

    MOSFET N-CH 600V 9A TO252

    Rohm Semiconductor

    		 5,016 -
    RFQ
    		R6009END3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
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