FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPF042N10NF2SATMA1

IPF042N10NF2SATMA1

MOSFET

Infineon Technologies

281 -
RFQ
IPF042N10NF2SATMA1

Datenblatt

StrongIRFET™ 2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 139A (Tc) 6V, 10V 4.25mOhm @ 80A, 10V 3.8V @ 93µA 85 nC @ 10 V ±20V 4000 pF @ 50 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IPB026N06NATMA1

IPB026N06NATMA1

MOSFET N-CH 60V 25A/100A D2PAK

Infineon Technologies

2,911 -
RFQ
IPB026N06NATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta), 100A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
STL190N4F7AG

STL190N4F7AG

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics

807 -
RFQ
STL190N4F7AG

Datenblatt

STripFET™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2mOhm @ 17.5A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 3000 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerFlat™ (5x6)
NP75N055YUK-E1-AY

NP75N055YUK-E1-AY

POWER TRS2

Renesas Electronics Corporation

5,000 -
RFQ
NP75N055YUK-E1-AY

Datenblatt

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.5mOhm @ 38A, 10V 4V @ 250µA 83 nC @ 10 V ±20V 5300 pF @ 25 V - 1W (Ta), 138W (Tc) 175°C Automotive AEC-Q101 Surface Mount 8-HSON (5x5.4)
R6520KNXC7G

R6520KNXC7G

650V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

998 -
RFQ
R6520KNXC7G

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) - - Through Hole TO-220FM
IXTP110N055T2

IXTP110N055T2

MOSFET N-CH 55V 110A TO220AB

Littelfuse Inc.

300 -
RFQ
IXTP110N055T2

Datenblatt

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 6.6mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3060 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRF830STRLPBF

IRF830STRLPBF

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix

650 -
RFQ
IRF830STRLPBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STF7N90K5

STF7N90K5

MOSFET N-CH 900V 7A TO220FP

STMicroelectronics

930 -
RFQ
STF7N90K5

Datenblatt

MDmesh™ K5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V - 5V @ 100µA - ±30V - - 25W -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
FDP030N06B-F102

FDP030N06B-F102

MOSFET N-CH 60V 120A TO220-3

onsemi

679 -
RFQ
FDP030N06B-F102

Datenblatt

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 205W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IXFP7N100P

IXFP7N100P

MOSFET N-CH 1000V 7A TO220AB

IXYS

300 -
RFQ
IXFP7N100P

Datenblatt

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
RS1E321GNTB1

RS1E321GNTB1

MOSFET N-CH 30V 32A/80A 8HSOP

Rohm Semiconductor

4,800 -
RFQ
RS1E321GNTB1

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 80A (Tc) 4.5V, 10V 2.1mOhm @ 32A, 10V 2.5V @ 1mA 42.8 nC @ 10 V ±20V 2850 pF @ 15 V - 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics Corporation

1,600 -
RFQ
NP89N06PDK-E1-AY

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-263-3
IPI90N04S402AKSA1

IPI90N04S402AKSA1

MOSFET N-CH 40V 90A TO262-3

Infineon Technologies

439 -
RFQ
IPI90N04S402AKSA1

Datenblatt

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.5mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
R6515KNZC17

R6515KNZC17

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor

299 -
RFQ
R6515KNZC17

Datenblatt

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-3PF
R6015KNZC17

R6015KNZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

289 -
RFQ
R6015KNZC17

Datenblatt

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole TO-3PF
RS6P060BHTB1

RS6P060BHTB1

NCH 100V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,220 -
RFQ
RS6P060BHTB1

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 10.6mOhm @ 60A, 10V 4V @ 1mA 25 nC @ 10 V ±20V 1560 pF @ 50 V - 3W (Ta), 73W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
PSMN1R1-30YLEX

PSMN1R1-30YLEX

PSMN1R1-30YLE/SOT669/LFPAK

Nexperia USA Inc.

1,479 -
RFQ
PSMN1R1-30YLEX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 265A (Tc) 7V, 10V 1.26mOhm @ 25A, 10V 2.2V @ 2mA 102 nC @ 10 V ±20V 6317 pF @ 15 V - 192W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
STP15N65M5

STP15N65M5

MOSFET N CH 650V 11A TO220

STMicroelectronics

980 -
RFQ
STP15N65M5

Datenblatt

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 340mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 810 pF @ 100 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220
PSMNR98-25YLEX

PSMNR98-25YLEX

PSMNR98-25YLE/SOT669/LFPAK

Nexperia USA Inc.

860 -
RFQ
PSMNR98-25YLEX

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 255A (Tc) 7V, 10V 1.11mOhm @ 25A, 10V 2.2V @ 2mA 98 nC @ 10 V ±20V 6249 pF @ 12 V - 192W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
FCP190N65S3

FCP190N65S3

MOSFET N-CH 650V 17A TO220-3

onsemi

750 -
RFQ
FCP190N65S3

Datenblatt

SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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