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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHA15N80AE-GE3

    SIHA15N80AE-GE3

    MOSFET N-CH 800V 6A TO220

    Vishay Siliconix

    		 973 -
    RFQ
    		SIHA15N80AE-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IPP60R210CFD7XKSA1

    IPP60R210CFD7XKSA1

    MOSFET N CH

    Infineon Technologies

    		 435 -
    RFQ
    		IPP60R210CFD7XKSA1

    Datenblatt

         		CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    FCPF1300N80Z

    FCPF1300N80Z

    MOSFET N-CH 800V 4A TO220F

    onsemi

    		 380 -
    RFQ
    		FCPF1300N80Z

    Datenblatt

         		SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    TK1R4F04PB,LXGQ

    TK1R4F04PB,LXGQ

    MOSFET N-CH 40V 160A TO220SM

    Toshiba Semiconductor and Storage

    		 1,000 -
    RFQ
    		TK1R4F04PB,LXGQ

    Datenblatt

         		U-MOSIX-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.9mOhm @ 80A, 6V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C - - Surface Mount TO-220SM(W)
    IPA60R180C7XKSA1

    IPA60R180C7XKSA1

    MOSFET N-CH 600V 9A TO220-FP

    Infineon Technologies

    		 203 -
    RFQ
    		IPA60R180C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
    STD8N65M5

    STD8N65M5

    MOSFET N-CH 650V 7A DPAK

    STMicroelectronics

    		 4,523 -
    RFQ
    		STD8N65M5

    Datenblatt

         		MDmesh™ V TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 690 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Surface Mount DPAK
    STF16N60M6

    STF16N60M6

    MOSFET N-CH 600V TO220-3 FP

    STMicroelectronics

    		 1,174 -
    RFQ
    		STF16N60M6

    Datenblatt

         		UltraFASTmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4.75V @ 250µA 16.7 nC @ 10 V ±25V 575 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    HUF75639S3ST

    HUF75639S3ST

    MOSFET N-CH 100V 56A D2PAK

    onsemi

    		 735 -
    RFQ
    		HUF75639S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    SIDR608EP-T1-RE3

    SIDR608EP-T1-RE3

    N-CHANNEL 45 V (D-S) 175C MOSFET

    Vishay Siliconix

    		 5,990 -
    RFQ
    		SIDR608EP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 56A (Ta), 228A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.3V @ 250µA 167 nC @ 10 V +20V, -16V 8900 pF @ 20 V - 7.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    STP76NF75

    STP76NF75

    MOSFET N-CH 75V 80A TO220

    STMicroelectronics

    		 987 -
    RFQ
    		STP76NF75

    Datenblatt

         		STripFET™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    IPF013N04NF2SATMA1

    IPF013N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 800 -
    RFQ
    		IPF013N04NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta), 232A (Tc) 6V, 10V 1.35mOhm @ 100A, 10V 3.4V @ 126µA 159 nC @ 10 V ±20V 7500 pF @ 20 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
    FCP360N65S3R0

    FCP360N65S3R0

    MOSFET N-CH 650V 10A TO220-3

    onsemi

    		 407 -
    RFQ
    		FCP360N65S3R0

    Datenblatt

         		SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 5A, 10V 4.5V @ 1mA 18 nC @ 10 V ±30V 730 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    TPWR8503NL,L1Q

    TPWR8503NL,L1Q

    MOSFET N-CH 30V 150A 8DSOP

    Toshiba Semiconductor and Storage

    		 4,674 -
    RFQ
    		TPWR8503NL,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.85mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 142W (Tc) 150°C (TJ) - - Surface Mount 8-DSOP Advance
    R6006JNJGTL

    R6006JNJGTL

    MOSFET N-CH 600V 6A LPTS

    Rohm Semiconductor

    		 1,098 -
    RFQ
    		R6006JNJGTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 15V 936mOhm @ 3A, 15V 7V @ 800µA 15.5 nC @ 15 V ±30V 410 pF @ 100 V - 86W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    RD3L08BGNTL

    RD3L08BGNTL

    MOSFET N-CH 60V 80A TO252

    Rohm Semiconductor

    		 1,285 -
    RFQ
    		RD3L08BGNTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.5mOhm @ 80A, 10V 2.5V @ 100µA 71 nC @ 10 V ±20V 3620 pF @ 30 V - 119W (Tc) 150°C (TJ) - - Surface Mount TO-252
    STP18N65M2

    STP18N65M2

    MOSFET N-CH 650V 12A TO220

    STMicroelectronics

    		 1,003 -
    RFQ
    		STP18N65M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 330mOhm @ 6A, 10V 4V @ 250µA 20 nC @ 10 V ±25V 770 pF @ 100 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
    PJMF900N60EC_T0_00001

    PJMF900N60EC_T0_00001

    600V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 1,986 -
    RFQ
    		PJMF900N60EC_T0_00001

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.3A, 10V 4V @ 250µA 8.8 nC @ 10 V ±30V 310 pF @ 400 V - 22.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    TPS1101D

    TPS1101D

    MOSFET P-CH 15V 2.3A 8SOIC

    Texas Instruments

    		 69 -
    RFQ
    		TPS1101D

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 15 V 2.3A (Ta) 2.7V, 10V 90mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25 nC @ 10 V +2V, -15V - - 791mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVMYS005N10MCLTWG

    NVMYS005N10MCLTWG

    PTNG 100V LL LFPAK4

    onsemi

    		 4,714 -
    RFQ
    		NVMYS005N10MCLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.4A (Ta), 108A (Tc) 4.5V, 10V 5.1mOhm @ 34A, 10V 3V @ 192µA 55 nC @ 10 V ±20V 4100 pF @ 50 V - 3.8W (Ta), 131W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    NP89N055PUK-E1-AY

    NP89N055PUK-E1-AY

    MOSFET N-CH 55V 90A TO263-3

    Renesas Electronics Corporation

    		 3,175 -
    RFQ
    		NP89N055PUK-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 4mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) - - Surface Mount TO-263-3
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