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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TPS1101D

    TPS1101D

    MOSFET P-CH 15V 2.3A 8SOIC

    Texas Instruments

    		 69 -
    RFQ
    		TPS1101D

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 15 V 2.3A (Ta) 2.7V, 10V 90mOhm @ 2.5A, 10V 1.5V @ 250µA 11.25 nC @ 10 V +2V, -15V - - 791mW (Ta) -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NVMYS005N10MCLTWG

    NVMYS005N10MCLTWG

    PTNG 100V LL LFPAK4

    onsemi

    		 4,714 -
    RFQ
    		NVMYS005N10MCLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.4A (Ta), 108A (Tc) 4.5V, 10V 5.1mOhm @ 34A, 10V 3V @ 192µA 55 nC @ 10 V ±20V 4100 pF @ 50 V - 3.8W (Ta), 131W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    NP89N055PUK-E1-AY

    NP89N055PUK-E1-AY

    MOSFET N-CH 55V 90A TO263-3

    Renesas Electronics Corporation

    		 3,175 -
    RFQ
    		NP89N055PUK-E1-AY

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 4mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) - - Surface Mount TO-263-3
    RS1E350GNTB

    RS1E350GNTB

    MOSFET N-CH 30V 35A/80A 8HSOP

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RS1E350GNTB

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V 2.5V @ 1mA 68 nC @ 10 V ±20V 4060 pF @ 15 V - 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
    R6509KNXC7G

    R6509KNXC7G

    650V 9A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 3,990 -
    RFQ
    		R6509KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 5V @ 230µA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    SIDR140DP-T1-RE3

    SIDR140DP-T1-RE3

    N-CHANNEL 25-V (D-S) MOSFET

    Vishay Siliconix

    		 2,998 -
    RFQ
    		SIDR140DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 79A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    RS1E350BNTB1

    RS1E350BNTB1

    NCH 30V 80A POWER MOSFET: RS1E35

    Rohm Semiconductor

    		 2,217 -
    RFQ
    		RS1E350BNTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V 2.5V @ 1mA 185 nC @ 10 V ±20V 7900 pF @ 15 V - 3W (Ta), 35W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    SIHP12N60E-BE3

    SIHP12N60E-BE3

    MOSFET N-CH 600V 12A TO220AB

    Vishay Siliconix

    		 346 -
    RFQ
    		SIHP12N60E-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    RJK0854DPB-00#J5

    RJK0854DPB-00#J5

    MOSFET N-CH 80V 25A LFPAK

    Renesas Electronics Corporation

    		 2,540 -
    RFQ
    		RJK0854DPB-00#J5

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Ta) 10V 13mOhm @ 12.5A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    R6524ENXC7G

    R6524ENXC7G

    650V 24A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 990 -
    RFQ
    		R6524ENXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6524KNXC7G

    R6524KNXC7G

    650V 24A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 989 -
    RFQ
    		R6524KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 74W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6024ENXC7G

    R6024ENXC7G

    600V 24A TO-220FM, LOW-NOISE POW

    Rohm Semiconductor

    		 980 -
    RFQ
    		R6024ENXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6024KNXC7G

    R6024KNXC7G

    600V 24A TO-220FM, HIGH-SPEED SW

    Rohm Semiconductor

    		 970 -
    RFQ
    		R6024KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R8002ANJFRGTL

    R8002ANJFRGTL

    MOSFET N-CH 800V 2A LPTS

    Rohm Semiconductor

    		 611 -
    RFQ
    		R8002ANJFRGTL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount LPTS
    IPA80R460CEXKSA2

    IPA80R460CEXKSA2

    MOSFET N-CH 800V 10.8A TO220

    Infineon Technologies

    		 500 -
    RFQ
    		IPA80R460CEXKSA2

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10.8A (Ta) 10V 460mOhm @ 7.1A, 10V 3.9V @ 680µA 64 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    SQJQ148ER-T1_GE3

    SQJQ148ER-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 1,641 -
    RFQ
    		SQJQ148ER-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 372A (Tc) 10V 1.5mOhm @ 20A, 10V 3.5V @ 250µA 102 nC @ 10 V ±20V 5750 pF @ 25 V - 394W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
    IRFIBC20GPBF

    IRFIBC20GPBF

    MOSFET N-CH 600V 1.7A TO220-3

    Vishay Siliconix

    		 1,045 -
    RFQ

    -

    		 - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRFS7734TRLPBF

    IRFS7734TRLPBF

    MOSFET N-CH 75V 183A D2PAK

    Infineon Technologies

    		 296 -
    RFQ
    		IRFS7734TRLPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IQE050N08NM5CGATMA1

    IQE050N08NM5CGATMA1

    TRENCH 40<-<100V PG-TTFN-9

    Infineon Technologies

    		 9,687 -
    RFQ
    		IQE050N08NM5CGATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-1
    NVMFS6H818NT1G

    NVMFS6H818NT1G

    MOSFET N-CH 80V 20A/123A 5DFN

    onsemi

    		 1,324 -
    RFQ
    		NVMFS6H818NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 123A (Tc) 10V 3.7mOhm @ 20A, 10V 4V @ 190µA 46 nC @ 10 V ±20V 3100 pF @ 40 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
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