FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FCPF250N65S3R0L-F154

FCPF250N65S3R0L-F154

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

1,835 -
RFQ
FCPF250N65S3R0L-F154

Datenblatt

SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tj) 10V 250mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
SIHP17N80AE-GE3

SIHP17N80AE-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix

899 -
RFQ
SIHP17N80AE-GE3

Datenblatt

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor

767 -
RFQ
R6511END3TL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) - - Surface Mount TO-252
R6007JNJGTL

R6007JNJGTL

MOSFET N-CH 600V 7A LPTS

Rohm Semiconductor

1,080 -
RFQ
R6007JNJGTL

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 780mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 475 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
RJK1003DPP-A0#T2

RJK1003DPP-A0#T2

MOSFET N-CH 100V 50A TO220FPA

Renesas Electronics Corporation

9,463 -
RFQ
RJK1003DPP-A0#T2

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Ta) 150°C - - Through Hole TO-220ABA
IQE030N06NM5CGATMA1

IQE030N06NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

Infineon Technologies

4,920 -
RFQ
IQE030N06NM5CGATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 137A (Tc) 6V, 10V 3mOhm @ 20A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3800 pF @ 30 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-1
NVMJST1D6N04CTXG

NVMJST1D6N04CTXG

TRENCH 6 40V LFPAK 5X7

onsemi

2,780 -
RFQ
NVMJST1D6N04CTXG

Datenblatt

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 314A (Tc) 10V 1.65mOhm @ 50A, 10V 3.5V @ 130µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
DMTH41M2SPS-13

DMTH41M2SPS-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,190 -
RFQ
DMTH41M2SPS-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 225A (Tc) 10V 1.2mOhm @ 30A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 11085 pF @ 20 V - 3.4W (Ta), 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type K)
AOTF380A60L

AOTF380A60L

MOSFET N-CH 600V 11A TO220F

Alpha & Omega Semiconductor Inc.

2,000 -
RFQ
AOTF380A60L

Datenblatt

aMOS5™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOB190A60CL

AOB190A60CL

MOSFET N-CH 600V 20A TO263

Alpha & Omega Semiconductor Inc.

1,725 -
RFQ
AOB190A60CL

Datenblatt

aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±30V 1935 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
NVMFS5C628NLT1G

NVMFS5C628NLT1G

MOSFET N-CH 60V 5DFN

onsemi

1,388 -
RFQ
NVMFS5C628NLT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
AOTF20S60L

AOTF20S60L

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.

971 -
RFQ
AOTF20S60L

Datenblatt

aMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 37.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
IPB180N04S401ATMA1

IPB180N04S401ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies

958 -
RFQ
IPB180N04S401ATMA1

Datenblatt

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IRFBE30LPBF

IRFBE30LPBF

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix

988 -
RFQ

-

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IXTA60N10T-TRL

IXTA60N10T-TRL

MOSFET N-CH 100V 60A TO263

Littelfuse Inc.

758 -
RFQ
IXTA60N10T-TRL

Datenblatt

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 18mOhm @ 25A, 10V 4.5V @ 50µA 49 nC @ 10 V ±20V 2650 pF @ 25 V - 176W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840STRRPBF

IRF840STRRPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

691 -
RFQ
IRF840STRRPBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
R6024KNX

R6024KNX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

291 -
RFQ
R6024KNX

Datenblatt

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3

MOSFET N-CH 600V 12A PPAK SO-8

Vishay Siliconix

1,100 -
RFQ
SIHJ240N60E-T1-GE3

Datenblatt

E PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
RJK0703DPP-A0#T2

RJK0703DPP-A0#T2

MOSFET N-CH 75V 70A TO220FPA

Renesas Electronics Corporation

8,351 -
RFQ
RJK0703DPP-A0#T2

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Ta) 10V 6.7mOhm @ 35A, 10V 4V @ 1mA 56 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Ta) 150°C - - Through Hole TO-220ABA
IPP60R160P7XKSA1

IPP60R160P7XKSA1

MOSFET N-CH 650V 20A TO220-3-1

Infineon Technologies

496 -
RFQ
IPP60R160P7XKSA1

Datenblatt

CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 160mOhm @ 6.3A, 10V 4V @ 350µA 31 nC @ 10 V ±20V 1317 pF @ 400 V - 81W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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