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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFBC30APBF

    IRFBC30APBF

    MOSFET N-CH 600V 3.6A TO220AB

    Vishay Siliconix

    		 906 -
    RFQ
    		IRFBC30APBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    TSM019NH04CR RLG

    TSM019NH04CR RLG

    40V, 100A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TSM019NH04CR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 100A (Tc) 7V, 10V 1.9mOhm @ 50A, 10V 3.6V @ 250µA 89 nC @ 10 V ±20V 6029 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    TSM019NH04LCR RLG

    TSM019NH04LCR RLG

    40V, 100A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 4,965 -
    RFQ
    		TSM019NH04LCR RLG

    Datenblatt

         		PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2.2V @ 250µA 104 nC @ 10 V ±16V 6282 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFNU (5x6)
    STD5N95K3

    STD5N95K3

    MOSFET N-CH 950V 4A DPAK

    STMicroelectronics

    		 2,485 -
    RFQ
    		STD5N95K3

    Datenblatt

         		SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 3.5Ohm @ 2A, 10V 5V @ 100µA 19 nC @ 10 V ±30V 460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SIHP22N60AE-BE3

    SIHP22N60AE-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 1,944 -
    RFQ
    		SIHP22N60AE-BE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPF039N08NF2SATMA1

    IPF039N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7

    Infineon Technologies

    		 682 -
    RFQ
    		IPF039N08NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 126A (Tc) 6V, 10V 3.9mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
    IPB80N04S2H4ATMA2

    IPB80N04S2H4ATMA2

    MOSFET N-CHANNEL_30/40V

    Infineon Technologies

    		 602 -
    RFQ
    		IPB80N04S2H4ATMA2

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    STF12N65M5

    STF12N65M5

    MOSFET N-CH 650V 8.5A TO220FP

    STMicroelectronics

    		 128 -
    RFQ
    		STF12N65M5

    Datenblatt

         		MDmesh™ V TO-220-5 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 430mOhm @ 4.3A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 900 pF @ 100 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
    IRF640STRRPBF

    IRF640STRRPBF

    MOSFET N-CH 200V 18A TO263

    Vishay Siliconix

    		 1,458 -
    RFQ
    		IRF640STRRPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6009ENXC7G

    R6009ENXC7G

    600V 9A TO-220FM, LOW-NOISE POWE

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6009ENXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    IRFZ48PBF

    IRFZ48PBF

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 978 -
    RFQ
    		IRFZ48PBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFZ48RPBF

    IRFZ48RPBF

    MOSFET N-CH 60V 50A TO220AB

    Vishay Siliconix

    		 948 -
    RFQ
    		IRFZ48RPBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRF740ALPBF

    IRF740ALPBF

    MOSFET N-CH 400V 10A I2PAK

    Vishay Siliconix

    		 615 -
    RFQ
    		IRF740ALPBF

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
    IRF740ASTRLPBF

    IRF740ASTRLPBF

    MOSFET N-CH 400V 10A D2PAK

    Vishay Siliconix

    		 550 -
    RFQ
    		IRF740ASTRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6009KNXC7G

    R6009KNXC7G

    600V 9A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 547 -
    RFQ
    		R6009KNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    FDMC86520DC

    FDMC86520DC

    MOSFET N-CH 60V 17A/40A DLCOOL33

    onsemi

    		 5,875 -
    RFQ
    		FDMC86520DC

    Datenblatt

         		Dual Cool™, PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 40A (Tc) 8V, 10V 6.3mOhm @ 17A, 10V 4.5V @ 250µA 40 nC @ 10 V ±20V 2790 pF @ 30 V - 3W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Dual Cool ™ 33
    RJK0853DPB-00#J5

    RJK0853DPB-00#J5

    MOSFET N-CH 80V 40A LFPAK

    Renesas Electronics Corporation

    		 4,910 -
    RFQ
    		RJK0853DPB-00#J5

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Ta) 4.5V, 10V 8mOhm @ 20A, 10V - 40 nC @ 4.5 V ±20V 6170 pF @ 10 V - 65W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    SIHH240N60E-T1-GE3

    SIHH240N60E-T1-GE3

    MOSFET N-CH 600V 12A PPAK 8 X 8

    Vishay Siliconix

    		 2,736 -
    RFQ
    		SIHH240N60E-T1-GE3

    Datenblatt

         		EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    STB100NF04T4

    STB100NF04T4

    MOSFET N-CH 40V 120A D2PAK

    STMicroelectronics

    		 1,563 -
    RFQ
    		STB100NF04T4

    Datenblatt

         		STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 4.6mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 5100 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    STP25N60M2-EP

    STP25N60M2-EP

    MOSFET N-CH 600V 18A TO220

    STMicroelectronics

    		 1,006 -
    RFQ
    		STP25N60M2-EP

    Datenblatt

         		MDmesh™ M2-EP TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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