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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMYS007N10MCLTWG

    NVMYS007N10MCLTWG

    PTNG 100V LL LFPAK4

    onsemi

    		 2,960 -
    RFQ
    		NVMYS007N10MCLTWG Datenblatt - SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 83A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 3V @ 141µA 37 nC @ 10 V ±20V 2700 pF @ 50 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    STD15N60DM6

    STD15N60DM6

    MOSFET N-CH 600V 12A DPAK

    STMicroelectronics

    		 2,483 -
    RFQ
    		STD15N60DM6 Datenblatt MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 338mOhm @ 6A, 10V 4.75V @ 250µA 15.3 nC @ 10 V ±25V 607 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    PJMF990N65EC_T0_00001

    PJMF990N65EC_T0_00001

    650V SUPER JUNCTION MOSFET

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMF990N65EC_T0_00001 Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 306 pF @ 400 V - 22.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    SUD35N10-26P-BE3

    SUD35N10-26P-BE3

    MOSFET N-CH 100V 12A/35A DPAK

    Vishay Siliconix

    		 1,504 -
    RFQ
    		SUD35N10-26P-BE3 Datenblatt TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    IPF050N10NF2SATMA1

    IPF050N10NF2SATMA1

    MOSFET

    Infineon Technologies

    		 1,311 -
    RFQ
    		IPF050N10NF2SATMA1 Datenblatt StrongIRFET™ 2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 117A (Tc) 6V, 10V 5.05mOhm @ 60A, 10V 3.8V @ 84µA 76 nC @ 10 V ±20V 3600 pF @ 50 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
    IRFBC40PBF-BE3

    IRFBC40PBF-BE3

    MOSFET N-CH 600V 6.2A TO220AB

    Vishay Siliconix

    		 1,018 -
    RFQ
    		IRFBC40PBF-BE3 Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    RJK0455DPB-00#J5

    RJK0455DPB-00#J5

    MOSFET N-CH 40V 45A LFPAK

    Renesas Electronics Corporation

    		 7,490 -
    RFQ
    		RJK0455DPB-00#J5 Datenblatt - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 10V 3.8mOhm @ 22.5A, 10V - 34 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    SIHJ8N60E-T1-GE3

    SIHJ8N60E-T1-GE3

    MOSFET N-CH 600V 8A PPAK SO-8

    Vishay Siliconix

    		 2,881 -
    RFQ
    		SIHJ8N60E-T1-GE3 Datenblatt - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 754 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFBC30ASPBF

    IRFBC30ASPBF

    MOSFET N-CH 600V 3.6A D2PAK

    Vishay Siliconix

    		 2,169 -
    RFQ
    		IRFBC30ASPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NVMJST3D3N04CTXG

    NVMJST3D3N04CTXG

    TRENCH 6 40V LFPAK 5X7

    onsemi

    		 3,000 -
    RFQ
    		NVMJST3D3N04CTXG Datenblatt - 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 157A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
    STL105N8F7AG

    STL105N8F7AG

    AUTOMOTIVE N-CHANNEL 80 V, 5.6 M

    STMicroelectronics

    		 2,994 -
    RFQ
    		STL105N8F7AG Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 6.5mOhm @ 25A, 10V 4.5V @ 250µA 46 nC @ 10 V ±20V 3475 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    SQJQ150E-T1_GE3

    SQJQ150E-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 1,960 -
    RFQ
    		SQJQ150E-T1_GE3 Datenblatt TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 233A (Tc) 10V 1.9mOhm @ 20A, 10V 3.5V @ 250µA 92 nC @ 10 V ±20V 4643 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8
    TK60F10N1L,LXGQ

    TK60F10N1L,LXGQ

    MOSFET N-CH 100V 60A TO220SM

    Toshiba Semiconductor and Storage

    		 1,750 -
    RFQ
    		TK60F10N1L,LXGQ Datenblatt U-MOSVIII-H TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Ta) 6V, 10V 6.11mOhm @ 30A, 10V 3.5V @ 500µA 60 nC @ 10 V ±20V 4320 pF @ 10 V - 205W (Tc) 175°C - - Surface Mount TO-220SM(W)
    R6004JNJGTL

    R6004JNJGTL

    MOSFET N-CH 600V 4A LPTS

    Rohm Semiconductor

    		 993 -
    RFQ
    		R6004JNJGTL Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount LPTS
    R6509END3TL1

    R6509END3TL1

    650V 9A TO-252, LOW-NOISE POWER

    Rohm Semiconductor

    		 4,421 -
    RFQ
    		R6509END3TL1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
    AUIRF7647S2TR

    AUIRF7647S2TR

    MOSFET N-CH 100V 5.9A DIRECTFET

    Infineon Technologies

    		 3,147 -
    RFQ
    		AUIRF7647S2TR Datenblatt HEXFET® DirectFET™ Isometric SC Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 5.9A (Ta), 24A (Tc) 10V 31mOhm @ 14A, 10V 5V @ 50µA 21 nC @ 10 V ±20V 910 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET™ SC
    IRF830SPBF

    IRF830SPBF

    MOSFET N-CH 500V 4.5A D2PAK

    Vishay Siliconix

    		 1,078 -
    RFQ
    		IRF830SPBF Datenblatt - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTD600N80S3Z

    NTD600N80S3Z

    MOSFET POWER, N-CHANNEL, SUPERFE

    onsemi

    		 2,543 -
    RFQ
    		NTD600N80S3Z Datenblatt SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tj) 10V 600mOhm @ 4A, 10V 3.8V @ 180µA 15.5 nC @ 10 V ±20V 725 pF @ 400 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    SIDR638DP-T1-RE3

    SIDR638DP-T1-RE3

    N-CHANNEL 40-V (D-S) MOSFET

    Vishay Siliconix

    		 12,000 -
    RFQ
    		SIDR638DP-T1-RE3 Datenblatt TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    PJMF210N65EC_T0_00601

    PJMF210N65EC_T0_00601

    650V/ 390MOHM / 10A/ EASY TO DRI

    Panjit International Inc.

    		 1,978 -
    RFQ
    		PJMF210N65EC_T0_00601 Datenblatt - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 210mOhm @ 9.5A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 1412 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
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